Mostrando 1 - 20 Resultados de 3,213 Para Buscar '"Inn"', tiempo de consulta: 0.63s Limitar resultados
  1. 1
    por Du Maurier, Daphne, 1907-1989
    Publicado 1962
    Libro
  2. 2
    por Sampson, Grace
    Publicado 2013
    Partituras Libro
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    Libro
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    “…In the context of a possible revision of the International Nonproprietary Names (INN) system of recombinant monoclonal antibodies, which is saturated, we propose several avenues of reflection driven by the primary goal of the INN, information of health-care professionals. …”
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    “…InN superconductivity is very special among III–V semiconductors, as other III–V semiconductors (such as GaAs, GaN, InP, InAs, etc.) usually lack strong covalent bonding and thus seldom show superconductivity at low temperatures. …”
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    “…A following tuning of nitridation process enhanced the quality of InN film further, which means that a moderate, stable, and slow nitridation process by NH3 flow also plays the key role in growing better-quality InN film. …”
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  12. 12
    por Calarco, Raffaella
    Publicado 2012
    “…An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. …”
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    “…Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride layers. …”
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  17. 17
    “…In the initial stage of the growth, amorphous InN(x) microparticles of cone shape in liquid phase form with assistance of an InN(x) wetting layer on the substrate. …”
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  18. 18
    “…The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In(2)O(3 )to InN. We find that the nitridation of In(2)O(3 )is effective by using NH(3 )and H(2 )or a two-step temperature nitridation process using just NH(3 )and slower ramp rates. …”
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  19. 19
    “…The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. …”
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  20. 20
    “…In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. …”
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