Mostrando 1,101 - 1,120 Resultados de 32,622 Para Buscar '"Hall ', tiempo de consulta: 0.42s Limitar resultados
  1. 1101
    “…Quantum spin Hall (QSH) insulators exhibit a bulk insulting gap and metallic edge states characterized by nontrivial topology. …”
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  2. 1102
  3. 1103
    “…Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe(2) exfoliated onto SiO(2). …”
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  4. 1104
    “…Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(−9) in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. …”
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  5. 1105
    “…Here we use the topological Hall effect (THE) to study phase stability and current-driven dynamics of skyrmions in MnSi nanowires. …”
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  6. 1106
    “…After coupling with a superconductor, the chiral edge states of the quantum anomalous Hall insulator can still survive, making the backscattering impossible. …”
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  7. 1107
  8. 1108
    “…We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y(3)Fe(5)O(12) (YIG) ferromagnetic insulator films. …”
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  9. 1109
    “…Search for two-dimensional III-V films with a nontrivial large-gap are quite crucial for the realization of dissipationless transport edge channels using quantum spin Hall (QSH) effects. Here we use first-principles calculations to predict a class of large-gap QSH insulators in functionalized TlSb monolayers (TlSbX(2); (X = H, F, Cl, Br, I)), with sizable bulk gaps as large as 0.22 ~ 0.40 eV. …”
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  10. 1110
    por Lee, Kevin C.
    Publicado 1998
    “…Careful testing over a period of 6 years of a number of GaAs/AlGaAs quantized Hall resistors (QHR) made with alloyed AuGe/Ni contacts, both with and without passivating silicon nitride coatings, has resulted in the identification of important mechanisms responsible for degradation in the performance of the devices as resistance standards. …”
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  11. 1111
    por Zhou, P., Sun, L. Z.
    Publicado 2016
    “…We find that valley-polarized anomalous Hall effect (VAHE) can be realized in germanene by adsorbing Cr, Mn, or Co atoms on its surface. …”
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  12. 1112
  13. 1113
    por Hwang, Kyusung, Kim, Yong Baek
    Publicado 2016
    “…In particular, such phases are akin to the Weyl semimetal phase in the bulk system and they would exhibit an unusually large anomalous Hall effect.…”
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  14. 1114
  15. 1115
    “…We present here a microscopic theory of a domain wall between spin unpolarized and spin polarized quantum Hall ferromagnet states at filling factor two with the Zeeman energy comparable to the cyclotron energy. …”
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  16. 1116
    “…The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In(2)O(3):H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. …”
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  17. 1117
    “…We have studied numerically the penetration depth of quantum spin hall edge states in chiral honeycomb nanoribbons based on the Green’s function method. …”
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  18. 1118
    “…Confined to a two-dimensional plane, electrons in a strong magnetic field travel along the edge in one-dimensional quantum Hall channels that are protected against backscattering. …”
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  19. 1119
    por Hu, Jiangsheng, Liu, JinSong, Wang, Kejia
    Publicado 2017
    “…We propose a new type of terahertz time-domain spectroscopy in an isotropic semiconductor wafer applied by a magnetic field in which two cross-polarization THz pulses couple with each other via the Hall effect. We built a classic theoretic model to describe cross-polarization coupling THz spectroscopy (CPCTS). …”
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  20. 1120
    “…The topological Hall effect is evidence of skyrmions, and we demonstrate the simultaneous coexistence of opposite polarity skyrmions using a novel method involving minor field loops of the Hall effect.…”
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