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Mostrando 21 - 40 Resultados de 3,326 Para Buscar '"Inn"', tiempo de consulta: 0.13s Limitar resultados
  1. 21
    “…Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride layers. …”
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    Enhancement of InN Luminescence by Introduction of Graphene Interlayer
  2. 22
    Publicado 2000
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    IEEE-INNS-ENNS International Joint Conference on Neural Networks
  3. 23
    “…In the initial stage of the growth, amorphous InN(x) microparticles of cone shape in liquid phase form with assistance of an InN(x) wetting layer on the substrate. …”
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    Probing Nucleation Mechanism of Self-Catalyzed InN Nanostructures
  4. 24
    “…The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In(2)O(3 )to InN. We find that the nitridation of In(2)O(3 )is effective by using NH(3 )and H(2 )or a two-step temperature nitridation process using just NH(3 )and slower ramp rates. …”
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    An investigation into the conversion of In(2)O(3 )into InN nanowires
  5. 25
    “…The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. …”
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    Long-term oxidization and phase transition of InN nanotextures
  6. 26
    “…In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. …”
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    Morphology Controlled Fabrication of InN Nanowires on Brass Substrates
  7. 27
    Publicado 1887
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    Online Artículo Texto
    Central London Throat and Ear Hospital: Gray's Inn Road
  8. 28
    Publicado 2008
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    Welsh engineer leads the way inn Large Hadron Collider project
  9. 29
    por Phon-Amnuaisuk, Somnuk, Au, Thien
    Publicado 2015
    “…This book constitutes the refereed proceedings of the Fourth International Neural Network Symposia series on Computational Intelligence in Information Systems, INNS-CIIS 2014, held in Bandar Seri Begawan, Brunei in November 2014. …”
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    4th INNS Symposia Series on Computational Intelligence in Information Systems
  10. 30
    “…The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. …”
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    Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
  11. 31
    “…The structural, electronic and vibrational properties of InN under pressures up to 20 GPa have been investigated using the pseudo-potential plane wave method (PP-PW). …”
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    Structural, electronic and vibrational properties of InN under high pressure
  12. 32
    “…The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. …”
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    Terahertz detectors arrays based on orderly aligned InN nanowires
  13. 33
    “…In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. …”
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    Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
  14. 34
    “…Here, we study carrier recombination and diffusion using the light-induced transient grating technique in InN epilayers grown by pulsed MOCVD on c-plane sapphire. …”
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    Direct Auger recombination and density-dependent hole diffusion in InN
  15. 35
    “…It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~10(13) cm(−2) on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. …”
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    Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer
  16. 36
    “…With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. …”
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    Metalorganic chemical vapor deposition of InN quantum dots and nanostructures
  17. 37
    “…The vertical resistance between the InN bilayer renders tribological energy by the sliding effect. …”
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    Strong tribo-piezoelectric effect in bilayer indium nitride (InN)
  18. 38
    “…However, the development of InN-based electronics is hampered by the metastable nature of InN. …”
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    Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys
  19. 39
    “…We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H–InN single crystals growing in the [0001] orientation. …”
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    Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire
  20. 40
    “…We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. …”
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    Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport
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