Mostrando 521 - 540 Resultados de 3,326 Para Buscar '"Inn"', tiempo de consulta: 0.61s Limitar resultados
  1. 521
    “…We propose INvariance of Noise (INN) space as a novel method for source localization of magnetoencephalography (MEG) data. …”
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  2. 522
  3. 523
    “…In contrast to out M, high T-cells’ Q(A) and intermediate and high B-cell Q(A) in inn M predicted longer TTR and DFS. High inn M/out M Q(A) ratios of CD3+ and CD20+ cells were associated with longer TTR and DFS, whereas high inn M/out M Q(A) ratio of CD8+ was predictive only for DFS. …”
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  4. 524
    “…AIMS: To evaluate and compare changes in salivary flow rate and salivary levels of TIMP-1 and TIMP-2 in individuals taking oral Isotretinoin (INN) with those who do not take INN. To assess the variation in TIMP-1 and TIMP-2 as well as salivary flow rate observed at different stages of periodontal disease in comparison to those observed in the case of healthy periodontium. …”
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  5. 525
    “…Only the samples grown under hydrogen-free nitrogen plasmas (Ar/N(2) or N(2)-only) resulted in nearly stoichiometric single-phase crystalline hexagonal InN (h-InN) films at substrate temperatures higher than 200 °C under 100 W rf-plasma power. …”
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  6. 526
    “…BACKGROUND: Intermediate nerve neuralgia (INN) is a rare condition believed to be caused by vascular compression, with external auditory canal pain as the chief symptom. …”
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  7. 527
    “…We investigate the phase transitions and the properties of the topological insulator in InGaN/GaN and InN/InGaN double quantum wells grown along the [0001] direction. …”
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  8. 528
    “…The Debye temperatures of BN, AlN, GaN and InN are 1571, 793, 515 and 242 K, respectively, using the elastic modulus formula. …”
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  9. 529
    “…Preclinically, 40.5% of patients were intubated (ANÄ 43.0%, INN 31.2%, CHIR 28.3%; p < 0.001), 5.5% received pleural decompression (ANÄ 5.9%, INN 4.2%, CHIR 2.8%; p = 0.004),and 10.8% were treated with catecholamines (ANÄ 11.3%, INN 8.3%, CHIR 8.3%; p = 0.022). …”
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  10. 530
    “…Analyzing the spinodal decomposition curves, we obtain the appropriate concentration region for the epitaxial growth of the InN-AlN pseudobinary alloy. At a temperature most common for the epitaxial growth of InAlN (1000 K), the solubility of InN is about 10%. …”
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  11. 531
  12. 532
    “…We first compared the wInn genome with other closely related Wolbachia genomes of Drosophila hosts in terms of genome content and confirm that the wInn genome is largely similar in overall gene content to the wMel strain infecting D. melanogaster. …”
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  13. 533
  14. 534
    “…Like Lm, L.inn::vgc induced the production of Type I Interferon's and protection was mediated by Listeria-specific CD8(+) T cells. …”
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  15. 535
    “…A distinctive imbalance in the incorporation of Al- and In-containing precursor species (namely, AlN/AlN(+), AlN(2)/AlN(2)(+), Al(2)N(2)/Al(2)N(2)(+), and Al(2)/Al(2)(+) vs InN/InN(+), InN(2)/InN(2)(+), In(2)N(2)/In(2)N(2)(+), and In(2)/In(2)(+)) is found at the growing edge of the NR side surfaces, which correlates well with the experimentally obtained core–shell structure as well as with the distinctive In-rich core and vice versa for the Al-rich shell. …”
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  16. 536
    “…Here, we utilized an invertible neural network (INN) to simultaneously model both the forward and inverse process. …”
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  17. 537
  18. 538
    “…C57Bl6 mice were divided into two groups: DO with a segmental defect in the inferior alveolar nerve (IAN) at the time of mandibular osteotomy (“DO Den”) and DO with IAN intact (“DO Inn”). DO Den demonstrated significantly reduced histological and radiological osteogenesis relative to DO Inn. …”
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  19. 539
    “…In this work, the effects of doping with alkaline earth metals (AEMs) on the structural, electronic, and magnetic properties of indium nitride (InN) monolayers are investigated using first-principles calculations based on density functional theory. …”
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  20. 540
    “…The In(x)Ga(1−x)N films (x = 0–0.21) exhibited upward surface band bending, and the valence band maximum was shifted to lower binding energy when the mole fraction of InN was increased. On the other hand, downward surface band bending was confirmed for an InN film with low carrier density despite its n-type conduction. …”
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