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21por ATLAS Pixel Collaboration“…It was assumed that both observations were related to radiation damage effects depending on the Total Ionizing Dose (TID) in the NMOS transistors of which each Front End chip holds around 80 million. …”
Publicado 2016
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22por Pandit, Lekha, Mustafa, Sharik, Kunder, Ramya, Shetty, Rajesh, Misri, Zulkifly, Pai, Shivanand, Shetty, Rakshith“…BACKGROUND: In resource-poor settings, the management of neuromyelitis optica (NMO) and NMO spectrum (NMOS) disorders is limited because of delayed diagnosis and financial constraints. …”
Publicado 2013
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23por Jarron, Pierre, Anelli, G, Calin, T, Cosculluela, J, Campbell, M, Delmastro, M, Faccio, F, Giraldo, A, Heijne, Erik H M, Kloukinas, Kostas C, Letheren, M F, Nicolaidis, M, Moreira, P, Paccagnella, A, Marchioro, A, Snoeys, W, Velazco, R“…This paper presents how a high tolerance for total ionizing dose can be obtained in commercial deep submicron technologies by using enclosed NMOS devices and guard rings. The method is explained, demonstrated on transistor and circuit level, and design implications are discussed. …”
Publicado 1999
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24por Mauricio Ferre, J, Gascón, D, Vilasís Cardona, X, Picatoste Olloqui, E, Machefert, F, Lefrançois, J, Duarte, O“…To achieve the required radiation tolerance several techniques are applied: double guard rings between PMOS and NMOS transistors as well as glitch suppressors and TMR Registers. …”
Publicado 2013
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25por Mauricio, J, Gascón, D, Vilasís, X, Picatoste, E, Machefert, F, Lefrancois, J, Duarte, O, Beigbeder, C“…To achieve the required radiation tolerance several techniques are applied: double guard rings between PMOS and NMOS transistors as well as glitch suppressors and TMR Registers. …”
Publicado 2014
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26por Borghello, Giulio, Faccio, Federico, Termo, Gennaro, Michelis, Stefano, Costanzo, Sebastiano, Koch, Henri D, Fleetwood, Daniel M“…In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs, different temperatures, and different biases. Both nMOS and pMOS devices with different sizes and geometries were studied. …”
Publicado 2021
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27“…N-Hydroxylating monooxygenases (NMOs) are involved in siderophore biosynthesis. Siderophores are high affinity iron chelators composed of catechol and hydroxamate functional groups that are synthesized and secreted by microorganisms and plants. …”
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28por Anghinolfi, Francis, Dabrowski, W, Delagnes, E, Jarron, Pierre, Scharfetter, L H H“…We present a transimpedance amplifier stage based on a novel current mode feedback topology. This circuit employs NMOS and PMOS transistors exclusively and requires neither capacitor for stabilizing the transimpedance loop nor resistor for the transresistance feedback and transistor loading. …”
Publicado 1995
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29por Degerli, Y, Godiot, S, Guilloux, F, Hemperek, T, Krüger, H, Lachkar, M, Liu, J, Orsini, F, Pangaud, P, Rymaszewski, P, Wang, T“…In these pixels, the front-end has been implemented inside the diode using both NMOS and PMOS transistors. The pixel pitch is 50 μm × 250 μm for all pixels. …”
Publicado 2016
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30por Terzo, Stefano, Benoit, Mathieu, Cavallaro, Emanuele, Casanova, Raimon, Foerster, Fabian, Grinstein, Sebastian, Iacobucci, Giuseppe, Peric, Ivan, Puigdengoles, Carles, Vilella, Eva“…One, called CMOS matrix, has comparators made of CMOS transistors in the periphery only, while the other, called NMOS matrix, includes also comparators made of NMOS transistors directly in the pixels. …”
Publicado 2019
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31por Cervenka, Johann, Kosina, Hans, Selberherr, Siegfried, Zhang, Jianjun, Hrauda, Nina, Stangl, Julian, Bauer, Guenther, Vastola, Guglielmo, Marzegalli, Anna, Montalenti, Francesco, Miglio, Leo“…Up to 15% enhancement of the NMOS saturation current is predicted.…”
Publicado 2011
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32por Na, Taehui“…To address this problem, this paper proposes a novel cross-coupled NMOS-based sensing circuit (CCN-SC) capable of improving the restore yield, based on the concept that the simplest is the best, of an NV-FF operating in the near/subthreshold voltage region. …”
Publicado 2021
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33“…Meanwhile, the trigger voltage of the ULVTSCR is adjustable with the number of its incorporated NMOS transistors. Compared with the existing Diodes-chain Triggered SCR (DTSCR) scheme, the NMOSs-chain triggered ULVTSCR possesses a 25% lowered overshoot voltage in the same area consumption, and thus it is more suitable for 2.5 V circuits ESD protections considering the CDM protection applications.…”
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34por Snoeys, W, Faccio, F, Burns, M, Campbell, M, Cantatore, E, Carrer, N, Casagrande, L, Cavagnoli, A, Dachs, C, Di Liberto, S, Formenti, F, Giraldo, A, Heijne, Erik H M, Jarron, Pierre, Letheren, M F, Marchioro, A, Martinengo, P, Meddi, F, Mikulec, B, Morando, M, Morel, M, Noah, E, Paccagnella, A, Ropotar, I, Saladino, S, Sansen, Willy, Santopietro, F, Scarlassara, F, Segato, G F, Signe, P M, Soramel, F, Vannucci, Luigi, Vleugels, K“…Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. …”
Publicado 2000
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35“…The circuit is based on bidirectional delay element connected in series with the PMOS and NMOS switching transistors. It provides differences in the dynamic response so that the direct-path current in the next stage is reduced. …”
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36“…The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved.…”
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37“…RESULTS: In the present study, we have analysed the physicochemical properties of the target enzyme and other N-hydroxylating monooxygenases (NMOs) using ExPASy server. The target enzyme SpPMO and most of the selected NMOs have a slightly acidic isoelectric point and are medially thermostable and generally insoluble. …”
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38por Campbell, M, Anelli, G, Burns, M, Cantatore, E, Casagrande, L, Delmastro, M, Dinapoli, R, Faccio, F, Heijne, Erik H M, Jarron, Pierre, Lupták, M, Marchioro, A, Martinengo, P, Minervini, D, Morel, M, Pernigotti, E, Ropotar, I, Snoeys, W, Wyllie, Ken H“…The radiation tolerance of this mixed mode analog-digital circuit has been enhanced by designing NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. …”
Publicado 1999
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39“…This effective technique consists in the systematic use of enclosed (edgeless) NMOS transistors and guardrings, and relies in the natural total dose hardness of the thin gate oxide of deep submicron processes. …”
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40por Chen, Ruibo, Wei, Hao, Liu, Hongxia, Hou, Fei, Xiang, Qi, Du, Feibo, Yan, Cong, Gao, Tianzhi, Liu, Zhiwei“…The MTSCR incorporates an external NMOSs-string, which drives the internal NMOS (INMOS) of MTSCR to turn on, and then the INMOS drive SCR structure to turn on. …”
Publicado 2023
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