Mostrando 41 - 60 Resultados de 64 Para Buscar '"NMOS"', tiempo de consulta: 0.07s Limitar resultados
  1. 41
    “…First, we constructed and calibrated an N-type FDSOI metal-oxide semiconductor (NMOS) structure and P-type FDSOI metal-oxide semiconductor (PMOS) structure. …”
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    Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit
  2. 42
    “…The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 μm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.…”
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    Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels
  3. 43
    “…The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. …”
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    Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation
  4. 44
    “…We present the simulated and measured performance of a transimpedance amplifier designed in a quarter micron CMOS process. Containing only NMOS and PMOS devices, this amplifier can be integrated in any submicron CMOS process. …”
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    A high-speed low-noise transimpedance amplifier in a 025 mum CMOS technology
  5. 45
    “…The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipation. …”
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    Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC
  6. 46
    “…The diodes have been replaced by six NMOS transistors connected in diodes. A number of capacitors have been added for each stage to boost voltage. …”
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    A multiband radio-frequency energy harvester for self-powered biosensor
  7. 47
    “…The experimental results demonstrate that irradiation-induced oxide-trap charges can modify the E-B junction barrier, and thereby make the common-emitter gain [Formula: see text] of the parasitic BJT in NMOS device increase, while decreasing it in a PMOS device. …”
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    Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs
  8. 48
    “…Without adopting BCD (bipolar-CMOS-DMOS) technology, the output voltage can be boosted over the breakdown voltage of n-well/substrate diode using triple-well NMOS (n-type metal-oxide-semiconductor) transistors. …”
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    A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes
  9. 49
    “…All mammal milk contains soluble oligosaccharides, including neutral milk oligosaccharides (NMOs) without sialic acid (Sia) moieties and acidic oligosaccharides or sialylated milk oligosaccharides (SMOs) with Sia residues at the end of sugar chains. …”
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    Current Perspective of Sialylated Milk Oligosaccharides in Mammalian Milk: Implications for Brain and Gut Health of Newborns
  10. 50
    por Alhoshany, Abdulaziz
    Publicado 2022
    “…A new adaptive-biasing scheme is implemented using stacking diodes with dynamic threshold voltage to mitigate the reverse-leakage current of the NMOS rectifying devices at high RF power levels. …”
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    A 900 MHz, Wide-Input Range, High-Efficiency, Differential CMOS Rectifier for Ambient Wireless Powering
  11. 51
    “…The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. …”
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    Design and Implementation of a RF Powering Circuit for RFID Tags or Other Batteryless Embedded Devices
  12. 52
    “…Integrated with an AC coupling CDS stage, the amplification is obtained by exploiting the strong capacitance to the voltage relation of a single NMOS transistor. A comprehensive noise model is developed for optimizing the trade-off between the area and noise. …”
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    Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification
  13. 53
    por Bentata, Yassamine
    Publicado 2020
    “…The International Federation of Medical Students’ Associations (IFMSA) was founded in 1951 and currently maintains 135 National Member Organizations (NMOs) from 125 countries, representing a network of 1.3 million medical students around the globe. …”
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    The COVID-19 pandemic and international federation of medical students’ association exchanges: thousands of students deprived of their clinical and research exchanges
  14. 54
    “…Schottky S/D PMOS exhibits an ON-state current (I(ON)) of 76.07 μA/μm and ON-state to OFF-state current ratio (I(ON)/I(OFF)) of 7 × 10(5), and those for NMOS are 48.57 μA/μm and 1 × 10(6). The CMOS inverter shows a voltage gain of 18V/V, a noise margin for high (NM(H)) of 0.17 V and for low (NM(L)) of 0.43 V, with power consumption less than 0.9 μW at V(DD) of 0.8 V. …”
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    Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration
  15. 55
    por Sexauer, Edgar
    Publicado 2001
    “…This has been achieved by the use of a deep submicron CMOS with a feature size of 0.25um and an enclosed layout geometry of nMOS transistors. In the context of this thesis, essential components of the analog readout chain of the Beetle-1.0 have been developed. …”
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    Development of radiation hard readout electronics for LHCb
  16. 56
    “…What is more, the design parameters involving NMOS and PMOS channel widths and power supply voltage and the performance parameters including average power consumption and propagation delay time are linked. …”
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    Multi-objective optimization of MOSFETs channel widths and supply voltage in the proposed dual edge-triggered static D flip-flop with minimum average power and delay by using fuzzy non-dominated sorting genetic algorithm-II
  17. 57
    “…Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. …”
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    A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter
  18. 58
    “…The auxiliary transistors compensate the threshold voltage (V(th)) of the PMOS rectifying device while the threshold voltage (V(th)) of the NMOS rectifying device is compensated by the output DC voltage. …”
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    A Highly Efficient RF-DC Converter for Energy Harvesting Applications Using a Threshold Voltage Cancellation Scheme
  19. 59
    “…The custom memristors used NMOS selector transistors, made available on a second 180 nm CMOS chip. …”
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    A CMOS–memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity
  20. 60
    “…Based on these requirements, a high-frequency semiconductor integrated switch with NMOS transistors was designed. With these transistors, it is possible to achieve higher integration than with bipolar ones. …”
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    Analysis and Implementation of Controlled Semiconductor Switch for Ultra-Wideband Radar Sensor Applications
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