“…Here, based upon the metal-oxide thin-film transistor (TFT) biosensor, we develop a real-time molecular diffusion model to benchmark the concentration of the reagents and products. …”
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“…In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. …”
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“…For next‐generation electronics and optoelectronics, 2D‐layered nanomaterial‐based field effect transistors (FETs) have garnered attention as promising candidates owing to their remarkable properties. …”
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“…This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). …”
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“…Herein, we demonstrate an OR logic ferroelectric in-situ transistor based on a CIPS/MoS(2) Van der Waals heterojunction. …”
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“…The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. …”
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“…In this study, the B3LYP hybrid density functional theory was used to investigate the electromechanical characteristics of C(70) fullerene with and without point charges to model the effect of the surface of the gate electrode in a C(70) single-electron transistor (SET). To understand electron tunneling through C(70) fullerene species in a single-C(70) transistor, descriptors of geometrical atomic structures and frontier molecular orbitals were analyzed. …”
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“…In this study, we propose the fabrication of sol-gel composite-based flexible and transparent synaptic transistors on polyimide (PI) substrates. Because a low thermal budget process is essential for the implementation of high-performance synaptic transistors on flexible PI substrates, microwave annealing (MWA) as a heat treatment process suitable for thermally vulnerable substrates was employed and compared to conventional thermal annealing (CTA). …”
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“…Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. …”
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“…We investigated the electrical performance and positive bias stress (PBS) stability of the amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with SiO(x) passivation layers after the post-annealing treatments in different atmospheres (air, N(2), O(2) and vacuum). …”
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“…Here, it is shown that a well‐known nonfullerene‐acceptor commonly used in organic solar cells, that is, BTP‐4F (aka Y6), enables solution‐processed organic thin‐film transistors (OTFT) with a μ (e) as high as 2.4 cm(2) V(−1) s(−1). …”
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“…In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlO(x)/Al(2)O(3) bilayer dielectrics is fabricated and characterized. …”
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“…In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). …”
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“…A dielectric ceramics/TiO(2)/single-crystalline silicon nanomembrane (SiNM) heterostructure is designed and fabricated for high performance flexible thin-film transistors (TFTs). Both the dielectric ceramics (Nb(2)O(3)–Bi(2)O(3)–MgO) and TiO(2) are deposited by radio frequency (RF) magnetron sputtering at room temperature, which is compatible with flexible plastic substrates. …”
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“…Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented. …”
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“…In this study, both the DNA and protein markers of pancreatic mucinous cysts were analyzed in human blood serum down to the single-molecule limit using the SiMoT (single-molecule assay with a large transistor) platform. The SiMoT device proposed herein, which exploits an inkjet-printed organic semiconductor on plastic foil, comprises an innovative 3D-printed sensing gate module, consisting of a truncated cone that protrudes from a plastic substrate and is compatible with standard ELISA wells. …”
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“…In this work, WS(2) was adopted as a channel material among transition metal dichalcogenides (TMD) materials that have recently been in the spotlight, and the circuit power performance (power consumption, operating frequency) of the monolayer WS(2) field-effect transistor with a double gate structure (DG WS(2)-FET) was analyzed. …”
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“…We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. …”
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“…Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. …”
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