Mostrando 2,021 - 2,040 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.35s Limitar resultados
  1. 2021
    “…Atomically thin molybdenum disulfide (MoS(2)) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. …”
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  2. 2022
    “…The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. …”
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  3. 2023
    por Tao, Xinge, Liu, Lu, Xu, Jingping
    Publicado 2022
    “…Usually, negative-capacitance field-effect transistors (NCFETs) use both a negative-capacitance layer and a positive-capacitance layer as the stack gate, which is not conductive to the scaling down of devices. …”
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  4. 2024
  5. 2025
  6. 2026
    por Lyu, Juan, Gong, Jian
    Publicado 2023
    “…The use of a two-dimensional (2D) van der Waals (vdW) metal-semiconductor (MS) heterojunction as an efficient cold source (CS) has recently been proposed as a promising approach in the development of steep-slope field-effect transistors (FETs). In addition to the selection of source materials with linearly decreasing density-of-states-energy relations (D(E)s), in this study, we further verified, by means of a computer simulation, that a 2D semiconductor-semiconductor combination could also be used as an efficient CS. …”
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  7. 2027
  8. 2028
    “…The polymers were then tested as separators in two all-solid-state electrochemical devices: parallel plate metal–insulator–metal (MIM) capacitors and thin-film transistors (TFTs). The laboratory-scale truly solid-state MIM capacitors showed the start of electrical double-layer (EDL) formation at ∼10(3) Hz and high areal capacitance (up to 17.2 μF cm(–2)). …”
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  9. 2029
    por Lin, Yu-Shyan, Lu, Chi-Che
    Publicado 2023
    “…This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO(2) is used to form the dielectric and passivation layers. …”
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  10. 2030
  11. 2031
  12. 2032
    “…The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). …”
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  13. 2033
    por Lee, Dong-Hee, Park, Hamin, Cho, Won-Ju
    Publicado 2023
    “…This study aimed to propose a silicon-on-insulator (SOI)-based charge-trapping synaptic transistor with engineered tunnel barriers using high-k dielectrics for artificial synapse electronics capable of operating at high temperatures. …”
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  14. 2034
    “…Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. …”
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  15. 2035
    “…The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. …”
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  16. 2036
    “…III-V semiconductors have been intensively studied with the goal of realizing metal-oxide-semiconductor field-effect transistors (MOSFETs) with high mobility, a high on-off ratio, and low power consumption as next-generation transistors designed to replace current Si technology. …”
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  17. 2037
    “…Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm(2)/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). …”
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  18. 2038
    por Wang, Dapeng, Furuta, Mamoru
    Publicado 2018
    “…The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (T(IGZO)) were investigated. …”
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  19. 2039
    “…In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al(2)O(3) nanolaminate structure was investigated. …”
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  20. 2040
    por Jamasb, Shahriar
    Publicado 2019
    “…The capacity of ion-selective and Gas-sensitive field effect transistors (FETs) to serve as low-power sensors for accurate continuous monitoring of pH and blood gases is evaluated in the amperometric or current mode of operation. …”
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