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2021por Zabrosaev, Ivan V., Kozodaev, Maxim G., Romanov, Roman I., Chernikova, Anna G., Mishra, Prabhash, Doroshina, Natalia V., Arsenin, Aleksey V., Volkov, Valentyn S., Koroleva, Alexandra A., Markeev, Andrey M.“…Atomically thin molybdenum disulfide (MoS(2)) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. …”
Publicado 2022
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2022por Kim, Dongwook, Lee, Hyeonju, Kim, Bokyung, Baang, Sungkeun, Ejderha, Kadir, Bae, Jin-Hyuk, Park, Jaehoon“…The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. …”
Publicado 2022
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2023“…Usually, negative-capacitance field-effect transistors (NCFETs) use both a negative-capacitance layer and a positive-capacitance layer as the stack gate, which is not conductive to the scaling down of devices. …”
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2024por Zhou, Yue, Wang, Dao, Li, Yushan, Jing, Lixin, Li, Shuangjie, Chen, Xiaodan, Zhang, Beijing, Shuai, Wentao, Tao, Ruiqiang, Lu, Xubing, Liu, JunmingEnlace del recurso
Publicado 2022
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2025
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2026“…The use of a two-dimensional (2D) van der Waals (vdW) metal-semiconductor (MS) heterojunction as an efficient cold source (CS) has recently been proposed as a promising approach in the development of steep-slope field-effect transistors (FETs). In addition to the selection of source materials with linearly decreasing density-of-states-energy relations (D(E)s), in this study, we further verified, by means of a computer simulation, that a 2D semiconductor-semiconductor combination could also be used as an efficient CS. …”
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2027
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2028por Nosov, Daniil R., Ronnasi, Bahar, Lozinskaya, Elena I., Ponkratov, Denis O., Puchot, Laura, Grysan, Patrick, Schmidt, Daniel F., Lessard, Benoît H., Shaplov, Alexander S.“…The polymers were then tested as separators in two all-solid-state electrochemical devices: parallel plate metal–insulator–metal (MIM) capacitors and thin-film transistors (TFTs). The laboratory-scale truly solid-state MIM capacitors showed the start of electrical double-layer (EDL) formation at ∼10(3) Hz and high areal capacitance (up to 17.2 μF cm(–2)). …”
Publicado 2023
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2029“…This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO(2) is used to form the dielectric and passivation layers. …”
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2030por Wang, Qinan, Zhao, Chun, Sun, Yi, Xu, Rongxuan, Li, Chenran, Wang, Chengbo, Liu, Wen, Gu, Jiangmin, Shi, Yingli, Yang, Li, Tu, Xin, Gao, Hao, Wen, Zhen“…SNNs deeply fused by synaptic transistors are designed to recognize the 40 different frequencies of EEG and improve accuracy to 95.1%. …”
Publicado 2023
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2031por Zhang, Wei, Shrestha, Sagar, Parajuli, Sajjan, Maskey, Bijendra Bishow, Park, Jinhwa, Yang, Hao, Jung, Younsu, Cho, Gyoujin“…Charge carrier polarity tuning in printed thin film transistors (TFTs) is a crucial step in order to obtain complementary printed devices. …”
Publicado 2023
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2032por Wang, Wenhui, Li, Ke, Lan, Jun, Shen, Mei, Wang, Zhongrui, Feng, Xuewei, Yu, Hongyu, Chen, Kai, Li, Jiamin, Zhou, Feichi, Lin, Longyang, Zhang, Panpan, Li, Yida“…The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). …”
Publicado 2023
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2033“…This study aimed to propose a silicon-on-insulator (SOI)-based charge-trapping synaptic transistor with engineered tunnel barriers using high-k dielectrics for artificial synapse electronics capable of operating at high temperatures. …”
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2034“…Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. …”
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2035por Cao, Tao, Luo, Laitang, Huang, Yifeng, Ye, Bing, She, Juncong, Deng, Shaozhi, Chen, Jun, Xu, Ningsheng“…The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. …”
Publicado 2016
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2036“…III-V semiconductors have been intensively studied with the goal of realizing metal-oxide-semiconductor field-effect transistors (MOSFETs) with high mobility, a high on-off ratio, and low power consumption as next-generation transistors designed to replace current Si technology. …”
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2037por Fan, Ching-Lin, Shang, Ming-Chi, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der“…Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm(2)/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). …”
Publicado 2014
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2038“…The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (T(IGZO)) were investigated. …”
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2039por Yao, Rihui, Li, Xiaoqing, Zheng, Zeke, Zhang, Xiaochen, Xiong, Mei, Xiao, Song, Ning, Honglong, Wang, Xiaofeng, Wu, Yuxiang, Peng, Junbiao“…In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al(2)O(3) nanolaminate structure was investigated. …”
Publicado 2018
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2040por Jamasb, Shahriar“…The capacity of ion-selective and Gas-sensitive field effect transistors (FETs) to serve as low-power sensors for accurate continuous monitoring of pH and blood gases is evaluated in the amperometric or current mode of operation. …”
Publicado 2019
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