“…We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al(2)O(3) bottom gate dielectric, formed by a sol–gel process. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…[Image: see text] Steep-slope β-Ga(2)O(3) nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Furthermore, fabricated transistors are fully functional on both structures with low leakage current, low on-resistance, and reduced temperature dependence as measured up to 300 °C. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…All solid-state lithium-ion transistors are considered as promising synaptic devices for building artificial neural networks for neuromorphic computing. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect the SARS coronavirus (SARS-CoV) nucleocapsid protein interaction without fluorescent labeling. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Here, we investigate the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dimensional buffer layer for plasma enhanced atomic layer deposition (PE-ALD) of Al(2)O(3) on graphene for top gated field effect transistors (FETs). The reactive nature of PE-ALD enables deposition of thin (2 nm) dielectrics directly on graphene and other two-dimensional materials without the need for a seed or functionalization layer; however, this also leads to significant oxidation of the graphene layer as observed by Raman. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Detecting proteins at low concentrations in high-ionic-strength conditions by silicon nanowire field-effect transistors (SiNWFETs) is severely hindered due to the weakened signal, primarily caused by screening effects. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

Enlace del recurso
Enlace del recurso
Enlace del recurso

“…A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Here, leveraging the opposite-charge-enhancement effect and the transistor-like device design, we circumvent these limitations and develop a TENG that is capable of delivering instantaneous power density over 10 MW/m(2) at a low frequency of ~ 1 Hz, far beyond that of the previous reports. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The minimum D(it) value extracted by the conventional conductance method was 2.5 × 10(12) cm(−2)·eV(−1), which agreed well with the actual transistor subthreshold swing of around 142 mV·dec(−1). …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Here, we report a laser-induced graphene field-effect transistor (LIG-FET) for detecting SARS-CoV-2. The FET was manufactured by different reduction degree LIG, with an oyster reef-like porous graphene channel to enrich the binding point between the virus protein and sensing area. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher than that of the single PVP layer. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiN(x)) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The calibration curve of the WS(2)-doped peptide-imprinted polymer-coated electrodes in the extended-gate field-effect transistor platform was obtained and used for the measurement of CRP concentration in real human serum.…”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL CNTTFETs) is greatly improved by using the synergy of electrostatic and chemical doping engineering. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso