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  1. 2061
    “…This study focuses on the fabrication and characterization of Cs(2)AgBiBr(6) double perovskite thin film for field-effect transistor (FET) applications. The Cs(2)AgBiBr(6) thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirm the phase-pure crystalline nature. …”
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    Air processed Cs(2)AgBiBr(6) lead-free double perovskite high-mobility thin-film field-effect transistors
  2. 2062
    “…However, in thin film transistor (TFT) applications, both 2D PEA(2)SnI(4) and 3D FASnI(3) MHPs have different drawbacks. …”
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    High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure
  3. 2063
    “…In this paper, the fabrication and electrical performance optimization of a four-levels vertically stacked Si(0.7)Ge(0.3) channel nanowires gate-all-around transistor are explored in detail. First, a high crystalline quality and uniform stacked Si(0.7)Ge(0.3)/Si film is achieved by optimizing the epitaxial growth process and a vertical profile of stacked Si(0.7)Ge(0.3)/Si fin is attained by further optimizing the etching process under the HBr/He/O(2) plasma. …”
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    4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process
  4. 2064
    “…In order to develop organic semiconductor materials with good performance, herein, a series of naphthalene derivatives were designed and synthesized by a “building-blocks approach” connected through α-bond, double bond, and triple bond, respectively. Thin-film transistors were fabricated in single-component and two-component modes based on these naphthalene derivatives by combining the F(16)CuPc as the n-type material. …”
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    Synthesis and characterization of naphthalene derivatives for two-component heterojunction-based ambipolar field-effect transistors complemented with copper hexadecafluorophthalocyanine (F(16)CuPc)
  5. 2065
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    Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
  6. 2066
    “…Self-aligned structured oxide thin-film transistors (TFTs) are appropriate candidates for use in the backplanes of high-end displays. …”
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    Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors
  7. 2067
    “…The compounds were tested in a top-contact/bottom-gate thin film transistor architecture, and they behave as p-type semiconductors.…”
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    D–A–D 2H-benzo[d][1,2,3]triazole derivatives as p-type semiconductors in organic field-effect transistors
  8. 2068
    “…[Image: see text] Vertical organic field-effect transistors (VOFETs) with a large current on/off ratio and easy fabrication process are highly desirable for future organic electronics. …”
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    Performance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide Electrode
  9. 2069
    “…We reported a portable multi-channel sputum-based interdigitated organic electrochemical transistors (SiOECTs) device for noninvasive sputum diagnosis. …”
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    Multi-channel AgNWs-doped interdigitated organic electrochemical transistors enable sputum-based device towards noninvasive and portable diagnosis of lung cancer
  10. 2070
    “…The use of the semiconductor heterojunction channel layer has been explored as a method for improving the performance of metal oxide thin-film transistors (TFTs). The excellent electrical performance and stability of heterojunction TFTs is easy for vacuum-based techniques, but difficult for the solution process. …”
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    Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In(2)O(3)/In(2)O(3):Gd Heterojunction Channel Layer
  11. 2071
    “…Floating‐Gate Free Transistors In article number 2203025, Yu‐Ting Yang, Wen‐Ya Lee, Chu‐Chen Chueh, and co‐workers reveal a floating‐gate‐free transistor based on the ambipolar diketopyrrolopyrrole‐based conjugated polymers. …”
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    Tuning Ambipolarity of the Conjugated Polymer Channel Layers of Floating‐Gate Free Transistors: From Volatile Memories to Artificial Synapses (Adv. Sci. 31/2022)
  12. 2072
    “…METHODS: The multi-channel double-gate silicon nanowire field effect transistor (SiNW-FET) biosensors were fabricated by using the top-down semiconductor manufacturing technology. …”
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    Dual-Channel Detection of Breast Cancer Biomarkers CA15-3 and CEA in Human Serum Using Dialysis-Silicon Nanowire Field Effect Transistor
  13. 2073
    “…The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. …”
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    Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review
  14. 2074
    “…In this study, we used a low-pressure thermal annealing (LPTA) treatment to improve the switching characteristics and bias stability of zinc–tin oxide (ZTO) thin film transistors (TFTs). For this, we first fabricated the TFT and then applied the LPTA treatment at temperatures of 80 °C and 140 °C. …”
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    Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment
  15. 2075
    “…We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As[Formula: see text] P[Formula: see text] ) gate barrier layer. …”
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    Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As[Formula: see text] P[Formula: see text] gate layer
  16. 2076
    “…In this study we investigated the applicability of using a CNT field-effect transistor (CNT-FET) as a diagnostic instrument for measuring cancer biomarkers in serum using a mouse model of Breast Cancer Susceptibility 1-related breast cancer. …”
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    Comparison of Radioimmuno and Carbon Nanotube Field-Effect Transistor Assays for Measuring Insulin-Like Growth Factor-1 in a Preclinical Model of Human Breast Cancer
  17. 2077
    “…Using measured capacitance-voltage curves with different gate lengths and current–voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in AlGaN/AlN/GaN HFETs is determined by the ratio of gate length to drain-to-source distance. …”
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    Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
  18. 2078
    por Zamm, Alfred V
    Publicado 2013
    “…The unique bipolar structure of secretory immunoglobulin A (IgA), having a central secretory piece and the resultant unique electronic function of this polarized molecule, allows it to function as an electronic transistor, producing an electronic gatekeeper in the form of an electronic sieve.…”
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    A clinical case-based hypothesis: secretory IgA operates as an electronic transistor controlling the selection or rejection of molecules in the absorption process in the lumen of gastrointestinal tract
  19. 2079
    “…The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distribution along the ZnO channel, the performance of the ZnO MOSFETs could be enhanced. …”
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    Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques
  20. 2080
    “…A separative extended-gate field-effect transistor (EGFET) device combined with a bi-layer MWCNTs-In(2)O(3) film was constructed as a pH sensor. …”
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    Investigation of extended-gate field-effect transistor pH sensors based on different-temperature-annealed bi-layer MWCNTs-In(2)O(3) films
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