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  1. 2081
    “…Tobacco mosaic virus (TMV) has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET). A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO) nanoparticles, employing a molecular precursor. …”
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    Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device
  2. 2082
    “…Here, we demonstrate remarkable improvement in the electrical characteristics of single-layer WS(2) field-effect transistor (SL-WS(2) FET) using chemical vapor deposition (CVD)-grown hexagonal BN (h-BN). …”
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    High-mobility and air-stable single-layer WS(2) field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
  3. 2083
    “…Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. …”
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    AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating
  4. 2084
    “…One long-standing goal in the emerging field of flexible and transparent electronic devices is to meet the demand of key markets, such as enhanced output performance for metal oxide semiconductor thin film transistors (TFTs) prepared by a solution process. While solution-based fabrication techniques are cost-effective and ensure large-area coverage at low temperature, their utilization has the disadvantage of introducing large trap states into TFTs. …”
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    Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise
  5. 2085
    “…An ALD Ga(2)O(3) film was then used as the gate dielectric and surface passivation layer in a metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. …”
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    Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
  6. 2086
    “…A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. …”
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    Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer
  7. 2087
    por Das, Saptarshi
    Publicado 2016
    “…This device, hereafter refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET, allows sub-60 mV/decade subthreshold swing and considerably higher ON current compared to any state of the art FETs. …”
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    Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current
  8. 2088
    “…We demonstrated modulation of charge carrier densities in all-solution-processed organic field-effect transistors (OFETs) by modifying the injection properties with self-assembled monolayers (SAMs). …”
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    Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors
  9. 2089
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    Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
  10. 2090
    “…We report low-temperature solution processing of hafnium oxide (HfO(2)) passivation layers for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl(4)) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO(2) film. …”
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    Low-temperature fabrication of an HfO(2) passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
  11. 2091
    “…In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET) and a film bulk acoustic resonator (FBAR). …”
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    Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons
  12. 2092
    “…Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)(4)Ti(3)O(12) films as insulator, and HfO(2) films as defect control layer were developed and fabricated. …”
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    Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer
  13. 2093
    “…Low voltage operational organic transistors (< 4 V) based on pentacene were successfully fabricated with hybrid dielectric films composed of aluminum oxide using atomic layer deposition and various phosphonic acid-based self-assembled monolayers as the gate dielectrics. …”
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    Hybrid dielectrics composed of Al(2)O(3) and phosphonic acid self-assembled monolayers for performance improvement in low voltage organic field effect transistors
  14. 2094
    “…In this work, a novel one-transistor dynamic random-access memory (1T DRAM) featuring the device channel with partially inserted wide-bandgap semiconductor material toward the high-temperature application is proposed and designed, and its device performances are investigated with an emphasis at 500 K. …”
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    A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications
  15. 2095
    “…In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al(2)O(3) (SAO) gate dielectric. …”
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    High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al(2)O(3) Gate Dielectric
  16. 2096
    “…We investigated the lateral distribution of the equilibrium carrier concentration (n(0)) along the channel and the effects of channel length (L) on the source-drain series resistance (R(ext)) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The lateral distribution of n(0) across the channel was extracted using the paired gate-to-source voltage (V(GS))-based transmission line method and the temperature-dependent transfer characteristics obtained from the TFTs with different Ls. n(0) abruptly decreased with an increase in the distance from the channel edge near the source/drain junctions; however, much smaller gradient of n(0) was observed in the region near the middle of the channel. …”
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    Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors
  17. 2097
    “…[Image: see text] The key impact and significance of a multilayer polymer-based dielectric system on the remarkable photoresponse properties of zinc phthalocyanine (ZnPc)-based photosensitive organic field-effect transistors (PS-OFETs) have been systematically analyzed at various incident optical powers. …”
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    High-Performance ZnPc Thin Film-Based Photosensitive Organic Field-Effect Transistors: Influence of Multilayer Dielectric Systems and Thin Film Growth Structure
  18. 2098
    “…Higher substrate temperature during deposition of the DTmBDT derivatives with aromatic end-caps results in larger domains and improved the transistor mobilities but not beyond the alkylated DTmBDT.…”
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    Molecular Ordering of Dithieno[2,3-d;2′,3′-d]benzo[2,1-b:3,4-b′]dithiophenes for Field-Effect Transistors
  19. 2099
    “…Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. …”
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    High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study
  20. 2100
    por Ye, Shujun, Yamabe, Kikuo, Endoh, Tetsuo
    Publicado 2019
    “…In this work, uniform sub-20 nm Si nanopillar (NP) arrays with a reduced diameter variance (to ±0.5 nm) and a cylindrical shape, which can be used for vertical gate-all-around metal-oxide-semiconductor field-effect transistors, were fabricated. For the fabrication process, an array of tapered Si NPs with a diameter of approximately 62.7 nm and a diameter variance of ±2.0 nm was initially fabricated by an argon fluoride lithography followed by dry etching. …”
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    Variance Reduction during the Fabrication of Sub-20 nm Si Cylindrical Nanopillars for Vertical Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistors
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