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  1. 2121
    “…Transistors made up of carbon nanotube CNT have demonstrated excellent current–voltage characteristics which outperform some high-grade silicon-based transistors. …”
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    A Simulation of the Effect of External and Internal Parameters on the Synthesis of a Carbyne with More than 6000 Atoms for Emerging Continuously Tunable Energy Barriers in CNT-Based Transistors
  2. 2122
    “…In this study, we present a detailed analysis of trapping characteristics at the Al(x)Ga(1−x)N/GaN interface of Al(x)Ga(1−x)N/GaN high-electron-mobility transistors (HEMTs) with reliability assessments, demonstrating how the composition of the Al in the Al(x)Ga(1−x)N barrier impacts the performance of the device. …”
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    Impact of Charge-Trapping Effects on Reliability Instability in Al(x)Ga(1−x)N/GaN High-Electron-Mobility Transistors with Various Al Compositions
  3. 2123
    “…This study investigates the operating characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying HfO(2) as the passivation layer. …”
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    Enhanced Operational Characteristics Attained by Applying HfO(2) as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study
  4. 2124
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    Study of Selective Dry Etching Effects of 15-Cycle Si(0.7)Ge(0.3)/Si Multilayer Structure in Gate-All-Around Transistor Process
  5. 2125
    “…Their trap‐free nature allows fabrication of virtually hysteresis‐free organic field effect transistors operating in a low voltage window with excellent stability under bias stress. …”
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    Pinaceae Pine Resins (Black Pine, Shore Pine, Rosin, and Baltic Amber) as Natural Dielectrics for Low Operating Voltage, Hysteresis‐Free, Organic Field Effect Transistors
  6. 2126
    “…In this letter, we investigated the structural and electrical characteristics of high-κ Er(2)O(3) and Er(2)TiO(5) gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er(2)O(3) dielectric, the a-IGZO TFT device incorporating an Er(2)TiO(5) gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm(2)/Vs, a small subthreshold swing of 143 mV/decade, and a high I(on)/I(off) current ratio of 4.23 × 10(7), presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er(2)TiO(5) film. …”
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    Structural and electrical characteristics of high-κ Er(2)O(3) and Er(2)TiO(5) gate dielectrics for a-IGZO thin-film transistors
  7. 2127
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    Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors
  8. 2128
    “…The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. …”
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    P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
  9. 2129
    “…In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. …”
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    Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness
  10. 2130
    “…In this work, HfO(2)-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. …”
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    Material insights of HfO(2)-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition
  11. 2131
    “…High-response organic field-effect transistor (OFET)-based NO(2) sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. …”
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    Achievement of High-Response Organic Field-Effect Transistor NO(2) Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction
  12. 2132
    “…AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al(x)Ga(1−x)N}/AlN, (b) Thin-GaN/3 × {Al(x)Ga(1−x)N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. …”
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    Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations
  13. 2133
    “…Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W).…”
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    Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors
  14. 2134
    “…Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. …”
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    High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers
  15. 2135
    “…In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO(2) gate insulator and CF(4) plasma treatment was demonstrated for the first time. …”
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    Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO(2) Gate Dielectrics by CF(4) Plasma Treatment
  16. 2136
    “…A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing the on-state resistance (R(ON)) and substrate pattern (SP) for enhancing the breakdown voltage (BV) is proposed in this work. …”
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    On the Baliga’s Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate
  17. 2137
    “…Amorphous In–Ga–Zn-O (a-IGZO) thin-film transistor (TFT) memories are attracting many interests for future system-on-panel applications; however, they usually exhibit a poor erasing efficiency. …”
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    Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer
  18. 2138
    “…The fluorescently labeled thiol-modified DNA was applied on the patterned arrays of graphene oxide (GO)/AuNPs, and biotin-streptavidin sensitive devices built with graphene-based transistors (GFETs, effective mobility of ~320 cm(2) V(−1) s(−1)) were demonstrated as examples of the platform for the next-generation biosensors with the high sensing response up to ~1 nM of target analyte (i.e., streptavidin). …”
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    Graphene Templated DNA Arrays and Biotin-Streptavidin Sensitive Bio-Transistors Patterned by Dynamic Self-Assembly of Polymeric Films Confined within a Roll-on-Plate Geometry
  19. 2139
    “…This scientific data article is related to the research work entitled “Non-Covalent functionalization of Single Walled Carbon Nanotubes with Fe-/Co-porphyrin and Co-phthalocyanine for Field-Effect Transistor Applications” published in “Organic electronics” (10.1016/j.orgel.2021.106212). …”
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    Raw and processed data used in non-covalent functionalization of single walled carbon nanotubes with Co-porphyrin and Co-phthalocyanine and its effect on field-effect transistor characteristics
  20. 2140
    “…We developed a fast (2–3 min), easy-to-use, low-cost, and quantitative electrochemical biosensor based on carbon nanotube field-effect transistor (CNT-FET) that allows digital detection of the SARS-CoV-2 S1 in fortifited saliva samples for quick and accurate detection of SARS-CoV-2 S1 antigens. …”
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    Carbon nanotube field-effect transistor (CNT-FET)-based biosensor for rapid detection of SARS-CoV-2 (COVID-19) surface spike protein S1
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