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  1. 2141
    “…Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off AlGaN/GaN transistor grown on a silicon <111> substrate using a nitrogen ion implantation energy of 300 keV, which shifted the bandgap from below to above the Fermi level. …”
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    A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation
  2. 2142
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    Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors
  3. 2143
    “…Furthermore, the carrier density of a poly-InO(x):H film could be reduced by SPC in air to as low as 2.4 × 10(17) cm(−3), which was below the metal–insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InO(x) channel did not show any switching properties. …”
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    Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO(x):H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors
  4. 2144
    “…We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga(2)O(3) metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. …”
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    The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga(2)O(3) Metal–Semiconductor Field-Effect Transistors
  5. 2145
    “…A highly sensitive glucose sensor based on AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated. The hydroxyl groups on the GaN surface were achieved by the decomposition of hydrogen peroxide solution (H(2)O(2)) under UV irradiation for the production of hydroxyl radicals. …”
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    An effective hydroxylation route for a highly sensitive glucose sensor using APTES/GOx functionalized AlGaN/GaN high electron mobility transistor
  6. 2146
    “…The electron mobilities of the three homopolymers have been investigated. The thin film transistor for P1 prepared by the eutectic-melt-assisted nanoimprinting method achieved an electron mobility of 2.11 × 10(−3) cm(2) s(−1) V(−1). …”
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    Polymers based on thieno[3,4-c]pyrrole-4,6-dione and pyromellitic diimide by CH–CH arylation reaction for high-performance thin-film transistors
  7. 2147
    “…Here, we reported a collaborative system of CRISPR-Cas13a coupling with the stabilized graphene field-effect transistor, providing high-intensity vector signals for detecting SARS-CoV-2. …”
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    High-intensity vector signals for detecting SARS-CoV-2 RNA using CRISPR/Cas13a couple with stabilized graphene field-effect transistor
  8. 2148
    Libro
    Electrónica cuántica : lo fundamental sobre transistores y rayos laser
  9. 2149
    “…Single crystal organic field-effect transistors (SC-OFETs) based on 2,6-DADTT reach a highest mobility of 1.26 cm(2) V(−1) s(−1) and an average mobility of 0.706 cm(2) V(−1) s(−1). 2,6-DADTT-based single crystal organic phototransistors (OPTs) demonstrate photosensitivity (P) of 2.49 × 10(6), photoresponsivity (R) of 6.84 × 10(3) A W(−1) and ultrahigh detectivity (D*) of 4.70 × 10(16) Jones to UV light, which are among the best figures of merit for UV-sensitive OPTs. …”
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    A new dithieno[3,2-b:2′,3′-d]thiophene derivative for high performance single crystal organic field-effect transistors and UV-sensitive phototransistors
  10. 2150
    “…A novel approach to fabricating a transparent and flexible one-transistor–one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. …”
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    Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes
  11. 2151
    “…A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. …”
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    An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor
  12. 2152
    “…A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. …”
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    1T1R Nonvolatile Memory with Al/TiO(2)/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor
  13. 2153
    “…Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO(2)) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. …”
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    Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO(2) Interlayer
  14. 2154
    “…We investigated the electrical and mechanical stability of flexible 6,13-bis(triisopropylsilylehtynyl)pentacene (TIPS-pentacene) thin-film transistors (TFTs) that were fabricated on polyimide (PI) substrates using cross-linked poly(4-vinylphenol) (c-PVP) and c-PVP/yttrium oxide (Y(2)O(3)) nanocomposite films as gate insulators. …”
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    Stability Study of Flexible 6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol)/Yttrium Oxide Nanocomposite Gate Insulator
  15. 2155
    “…Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated by solution-process have been reported for emerging approaches based on device configuration and fabrication process. …”
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    Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature
  16. 2156
    “…The correlation between preaggregation degree and transistor performance of P1 films is explored.…”
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    Modulating Surface Morphology and Thin-Film Transistor Performance of Bi-thieno[3,4-c]pyrrole-4,6-dione-Based Polymer Semiconductor by Altering Preaggregation in Solution
  17. 2157
    “…This work demonstrates the ultrasensitive electrical detection of the HA1 domain of hemagglutinin (HA), a representative viral surface protein of the influenza virus, using the top-down complementary metal oxide semiconductor (CMOS) processed silicon nanowire (SiNW) field-effect transistor (FET) configuration. Cytidine-5′-monophospho-N-acetylneuraminic acid (CMP-NANA) was employed as a probe that specifically binds both to the aldehyde self-aligned monolayer on the SiNWs and to HA1 simultaneously. …”
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    Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors
  18. 2158
    “…Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. …”
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    Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
  19. 2159
    “…Herein, an electronic method for determining SEPT9 methylation in CRC patients is proposed by using the carbon dot-modified liquid exfoliated graphene field effect transistor (CDs-LEG-FET) as the DNAm sensor, the specifically designed probes to capture the SEPT9 gene and the immunologic recognition to recognize 5-methylcytosine (5mC) positions on the anchored sequences. …”
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    Multiprobe Assay for Clinical SEPT9 Methylation Based on the Carbon Dot-Modified Liquid-Exfoliated Graphene Field Effect Transistor with a Potential to Present a Methylation Panorama
  20. 2160
    “…Herein, a novel vdWH field‐effect transistor (FET) composed of molybdenum ditelluride (MoTe(2)) and palladium diselenide (PdSe(2)) is studied for highly sensitive photodetection performance in the broad visible and near‐infrared (VNIR) region. …”
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    Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe(2) and PdSe(2)
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