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  1. 2161
    “…Scarcity of the antisolvent polymer dielectrics and their poor stability have significantly prevented solution-processed ultraflexible organic transistors from low-temperature, large-scale production for applications in low-cost skin-inspired electronics. …”
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    Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics
  2. 2162
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    Thickness-Dependent Structural and Electrical Properties of WS(2) Nanosheets Obtained via the ALD-Grown WO(3) Sulfurization Technique as a Channel Material for Field-Effect Transistors
  3. 2163
    por Chakraborty, Surajit, Kim, Tae-Woo
    Publicado 2022
    “…The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. …”
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    Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors
  4. 2164
    “…Catalyst removal is necessary to avoid catalyst melting during temperature increase prior to a-Si shell deposition. Field effect transistors based on Ge-core/a-Si-shell nanowires exhibited p-channel depletion-mode characteristics as a result of free hole accumulation in the Ge channel. …”
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    Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors
  5. 2165
    “…A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al(2)O(3)/ZrO(2) stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance the stability after thermal stress or time stress. …”
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    Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al(2)O(3)/ZrO(2) Stacked Gate Dielectrics
  6. 2166
    Materias:
    Libro
    CMOS/TTL digital systems design /
  7. 2167
    “…These are critical characteristics that qualify the performance of optoelectronic devices, particularly field-effect transistor components (FETs). Here, the hybrid compound 2-amino-5-picoline tetrachloroferrate(iii) (2A5PFeCl(4)) was synthesised by using the slow evaporation solution growth method at room temperature. …”
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    Crystal structure and optical characterization of a new hybrid compound, C(6)H(9)N(2)FeCl(4), with large dielectric constants for field-effect transistors
  8. 2168
    por Al-Mohammed, Huda Ibrahim
    Publicado 2011
    “…Thermoluminescent dosimeters (TLDs) and the OneDose(™) metal oxide semiconductor field effect transistor (MOSFET) detectors are used during treatment delivery to measure the radiation dose and compare it with the target prescribed dose. …”
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    Evaluation of clinical use of OneDose(™) metal oxide semiconductor field-effect transistor detectors compared to thermoluminescent dosimeters to measure skin dose for adult patients with acute lymphoblastic leukemia
  9. 2169
    “…The Front Cover picture shows an electrical bioassay for the label‐free and highly‐sensitive detection of a histidine‐rich protein (serum albumin) using an organic filed‐effect transistor (an OFET) modified with a Ni(II)‐trinitriloacetic acid monolayer (Ni(II)‐nta). …”
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    Cover Picture: Label‐Free Direct Electrical Detection of a Histidine‐Rich Protein with Sub‐Femtomolar Sensitivity using an Organic Field‐Effect Transistor (ChemistryOpen 4/2017)
  10. 2170
    “…A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. …”
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    Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor
  11. 2171
    “…Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O(2) plasma-enhanced atomic layer deposition Al(2)O(3) dielectrics at different temperatures. …”
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    High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al(2)O(3) Dielectric
  12. 2172
    “…The results obtained in this study disclose the effect of alkyl chains introduced onto the molecule on transistor characteristics.…”
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    Synthesis of Dinaphtho[2,3-d:2’,3’-d’]anthra[1,2-b:5,6-b’]dithiophene (DNADT) Derivatives: Effect of Alkyl Chains on Transistor Properties
  13. 2173
    “…Forbes takes a critical view of our paper on nanoscale vacuum channel transistors (NVCTs), arguing mainly about the weaknesses in the theory of field electron emission. …”
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    Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D
  14. 2174
    “…De-embedding the measured profile from the system response is required for various applications, such as contact characterization of thin-film transistors, or local longitudinal electric field measurements. …”
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    Experimental determination of the lateral resolution of surface electric potential measurements by Kelvin probe force microscopy using biased electrodes separated by a nanoscale gap and application to thin-film transistors
  15. 2175
    por Forbes, Richard G.
    Publicado 2021
    “…These comments aim to correct some apparent weaknesses in the theory of field electron emission given in a recent paper about nanoscale vacuum channel transistors, and to improve the presentation of this theory. …”
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    Comment on “Design and circuit simulation of nanoscale vacuum channel transistors” by J. Xu, Y. Qin, Y. Shi, Y. Yang and X. Zhang, Nanoscale Adv., 2020, 2, 3582
  16. 2176
    “…Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various functionalities. …”
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    Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
  17. 2177
    “…The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (V(knee)), saturation current density (I(d-sat)), and cut-off frequency (f(t)) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor OPTIM is proposed by considering the various performance parameters of the device to reduce the V(knee) and improve the I(d-sat) on the premise of ensuring the f(t). …”
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    A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application
  18. 2178
    por Lenk, John D.
    Publicado 1976
    Materias: “…Transistores de efecto de campo.…”
    Libro
    Manual de componentes y circuitos electrónicos /
  19. 2179
    “…InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. …”
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    Steep Switching of In(0.18)Al(0.82)N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †
  20. 2180
    por Keum, Dongmin, Kim, Hyungtak
    Publicado 2019
    “…In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. …”
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    Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors
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