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201por Gopinathan, Kaustav A., Mishra, Avanish, Mutlu, Baris R., Edd, Jon F., Toner, Mehmet“…Just as the electronic transistor enabled unprecedented advances in the automatic control of electricity on an electronic chip, a microfluidic analogue to the transistor could enable improvements in the automatic control of reagents, droplets and single cells on a microfluidic chip. …”
Publicado 2023
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202por Shibata, Kenji, Yoshida, Masaki, Hirakawa, Kazuhiko, Otsuka, Tomohiro, Bisri, Satria Zulkarnaen, Iwasa, Yoshihiro“…Colloidal quantum dots are sub-10 nm semiconductors treated with liquid processes, rendering them attractive candidates for single-electron transistors operating at high temperatures. However, there have been few reports on single-electron transistors using colloidal quantum dots due to the difficulty in fabrication. …”
Publicado 2023
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203“…Organic Electrochemical transistors (OECTs) present unique features for their strategic combination with biomedical interfaces, simple and low voltage operation regime and sensing ability in aqueous environment, but they still lack selectivity, so that a significant effort in research is devoted to overcome this limitation. …”
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204“…We demonstrate that the density of magnons flowing from the transistor’s source to its drain can be decreased three orders of magnitude by the injection of magnons into the transistor’s gate.…”
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205“…Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. …”
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206“…We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. …”
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207por Seo, Jung-Hun, Ling, Tao, Gong, Shaoqin, Zhou, Weidong, Ma, Alice L., Guo, L. Jay, Ma, Zhenqiang“…Here we report a generic strategy for fabricating high-performance flexible Si nanomembrane (NM)-based RF thin-film transistors (TFTs), capable of over 100 GHz operation in theory, with NIL patterned deep-submicron-scale channel lengths. …”
Publicado 2016
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208por Fromherz, Peter“…The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. …”
Publicado 2016
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209por Braendlein, Marcel, Lonjaret, Thomas, Leleux, Pierre, Badier, Jean‐Michel, Malliaras, George G.“…Organic electrochemical transistors (OECTs) are receiving a great deal of attention as amplifying transducers for electrophysiology. …”
Publicado 2016
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210por Fisichella, Gabriele, Lo Verso, Stella, Di Marco, Silvestra, Vinciguerra, Vincenzo, Schilirò, Emanuela, Di Franco, Salvatore, Lo Nigro, Raffaella, Roccaforte, Fabrizio, Zurutuza, Amaia, Centeno, Alba, Ravesi, Sebastiano, Giannazzo, Filippo“…More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. …”
Publicado 2017
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211por Yamamoto, Makoto, Azuma, Yasuo, Sakamoto, Masanori, Teranishi, Toshiharu, Ishii, Hisao, Majima, Yutaka, Noguchi, Yutaka“…We investigated reversible switching behaviors of a molecular floating-gate single-electron transistor (MFG-SET). The device consists of a gold nanoparticle-based SET and a few tetra-tert-butyl copper phthalocyanine (ttbCuPc) molecules; each nanoparticle (NP) functions as a Coulomb island. …”
Publicado 2017
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212“…We report the fabrication and electrical performance of nanoscale vacuum channel transistor (NVCT) based on graphene. Ninety-nanometer-width vacuum nano-channel could be precisely fabricated with standard electron beam lithography process. …”
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213por Zhang, Yawen, Fan, Jiewen, Huang, Qianqian, Zhu, Jiadi, Zhao, Yang, Li, Ming, Wu, Yanqing, Huang, Ru“…Here, we demonstrate the magnetoresistance effect in a silicon nanowire field effect transistor (SNWT) fabricated by complementary metal-oxide-semiconductor (CMOS)-compatible technology. …”
Publicado 2018
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214“…We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: [Formula: see text] -symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. …”
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215por Zhang, Jiawei, Wilson, Joshua, Auton, Gregory, Wang, Yiming, Xu, Mingsheng, Xin, Qian, Song, Aimin“…Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. …”
Publicado 2019
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216por Gerasimov, Jennifer Y., Gabrielsson, Roger, Forchheimer, Robert, Stavrinidou, Eleni, Simon, Daniel T., Berggren, Magnus, Fabiano, Simone“…An evolvable organic electrochemical transistor (OECT), operating in the hybrid accumulation–depletion mode is reported, which exhibits short‐term and long‐term memory functionalities. …”
Publicado 2019
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217por Wang, Xiaowei, Yu, Peng, Lei, Zhendong, Zhu, Chao, Cao, Xun, Liu, Fucai, You, Lu, Zeng, Qingsheng, Deng, Ya, Zhu, Chao, Zhou, Jiadong, Fu, Qundong, Wang, Junling, Huang, Yizhong, Liu, Zheng“…The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. …”
Publicado 2019
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218“…Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. …”
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219por Zhou, Wenhan, Chen, Jiayi, Bai, Pengxiang, Guo, Shiying, Zhang, Shengli, Song, Xiufeng, Tao, Li, Zeng, Haibo“…Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. …”
Publicado 2019
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220por Montanaro, A., Wei, W., De Fazio, D., Sassi, U., Soavi, G., Aversa, P., Ferrari, A. C., Happy, H., Legagneux, P., Pallecchi, E.“…We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. …”
Publicado 2021
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