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  1. 2181
    por Cho, Seong-Kun, Cho, Won-Ju
    Publicado 2020
    “…In this study, we present a low thermal budget microwave annealing (MWA) method for calcination of electrospun In-Ga-ZnO (IGZO) nanofibres and demonstrate an improvement in the performance of IGZO nanofibre field-effect transistors (FETs) by Ar/O(2) mixed-plasma surface treatment. …”
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    Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O(2) mixed-plasma surface treatment
  2. 2182
    por Kiver, Milton Sol, 1918-
    Publicado 1978
    Materias: “…Transistores 356116…”
    Libro
    Electrónica transistorizada e integrada
  3. 2183
    por Roblin, Patrick, 1958-
    Publicado 2002
    Materias:
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    High-speed heterostructure devices : from device concepts to circuit modeling /
  4. 2184
    por Carson, Ralph S.
    Publicado 1975
    Materias: “…Circuitos de transistores 354606…”
    Libro
    High-frequency amplifiers /
  5. 2185
    por Cutler, Phillip
    Publicado 1978
    Materias: “…Circuitos de transistores. 354606…”
    Libro
    Analisis de circuitos con semiconductores.
  6. 2186
    por Hyun, Tae-Hwan, Cho, Won-Ju
    Publicado 2023
    “…In this study, we propose a highly sensitive and selective biosensor platform for Ca(2+) detection, which comprises a dual-gate (DG) field-effect transistor (FET) with a high-k engineered gate dielectric, silicon nanowire (SiNW) random network channel, and Ca(2+)-selective extended gate. …”
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    Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors
  7. 2187
    “…A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). …”
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    Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
  8. 2188
    “…In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al(0.5)GaN etch-stop layer. …”
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    Improved I(on)/I(off) Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al(0.5)GaN Etch-Stop Layer
  9. 2189
    “…Mingdong Yi, Linghai Xie, Wei Huang and co‐workers describe an organic field‐effect transistor memory device based on trilayer organic heterostructures in article number 1700007. …”
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    Semiconductors: High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017)
  10. 2190
    “…The insulated gate bipolar transistor (IGBT) is a kind of excellent performance switching device used widely in power electronic systems. …”
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    Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data
  11. 2191
    “…Improving the charge carrier mobility of solution‐processable organic semiconductors is critical for the development of advanced organic thin‐film transistors and their application in the emerging sector of printed electronics. …”
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    Remarkable Enhancement of the Hole Mobility in Several Organic Small‐Molecules, Polymers, and Small‐Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p‐Dopant B(C(6)F(5))(3)
  12. 2192
    “…In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. …”
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    Analysis of Threshold Voltage Shift for Full V(GS)/V(DS)/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
  13. 2193
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    Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array
  14. 2194
    “…In this work, we propose a saliva-based COVID-19 antigen test using the electrical double layer (EDL)-gated field-effect transistor-based biosensor (BioFET). The detection of SARS-CoV-2 nucleocapsid (N) protein is validated with limits of detection (LoDs) of 0.34 ng/mL (7.44 pM) and 0.14 ng/mL (2.96 pM) in 1× PBS and artificial saliva, respectively. …”
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    Saliva-based COVID-19 detection: A rapid antigen test of SARS-CoV-2 nucleocapsid protein using an electrical-double-layer gated field-effect transistor-based biosensing system
  15. 2195
    “…Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. …”
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    Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride
  16. 2196
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    Vinylene and benzo[c][1,2,5]thiadiazole: effect of the π-spacer unit on the properties of bis(2-oxoindolin-3-ylidene)-benzodifuran-dione containing polymers for n-channel organic field-effect transistors
  17. 2197
    “…The cell-based biosensor was built on the foundation of an improved extended gate ion-sensitive field-effect transistor (EG-ISFET). Using an EG-ISFET, instead of a traditional ion-sensitive field-effect transistor (ISFET), resulted in an increase in the sensitivity and reliability of detection. …”
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    Non-Invasive Screening for Alzheimer’s Disease by Sensing Salivary Sugar Using Drosophila Cells Expressing Gustatory Receptor (Gr5a) Immobilized on an Extended Gate Ion-Sensitive Field-Effect Transistor (EG-ISFET) Biosensor
  18. 2198
    “…Electron backscatter diffraction (EBSD) was applied to investigate the grain size and orientation of polycrystalline Ca(x)Sr(1–x)Bi(2)Ta(2)O(9) (C(x)S(1–x)BT) films in ferroelectric-gate field-effect transistors (FeFETs). The C(x)S(1–x)BT FeFETs with x = 0, 0.1, 0.2, 0.5, and 1 were characterized by the EBSD inverse pole figure map. …”
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    Investigation of Ferroelectric Grain Sizes and Orientations in Pt/Ca(x)Sr(1–x)Bi(2)Ta(2)O(9)/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors
  19. 2199
    “…In article number 1900245, Martin Heeney, Dong‐Yu Kim, and co‐workers describe an organic field‐effect transistor featuring a semiconducting polymer, PDSSTV, in its channel layer. …”
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    Diseleno[3,2‐b:2′,3′‐d]selenophenes: Diseleno[3,2‐b:2′,3′‐d]selenophene‐Containing High‐Mobility Conjugated Polymer for Organic Field‐Effect Transistors (Adv. Sci. 13/2019)
  20. 2200
    “…In this work, Al(0.83)In(0.17)N/GaN/Al(0.18)Ga(0.82)N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). …”
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    Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array
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