“…An introduction to semiconductors ; the p-n junction ; the junction transistor ; electrical characteristics and ratings ; basic transistor amplifiers ; the field-effect transistor ; the unijunction transistor (UJT) ; the silicon controlled rectifier (SCR) ; the DIAC and TRIAC ; light operated devices ; integrated circuits (ICs) ; other solid-state devices of interest ; electron tubes.…”
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“…This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. …”
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“…An all transistor active inductor shunt peaking structure has been used in a prototype of 8-Gbps high-speed VCSEL driver which is designed for the optical link in ATLAS liquid Argon calorimeter upgrade. …”
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“…The fabrication and measurements of solution‐processed vertically stacked complementary organic field‐effect transistors (FETs) with a high static noise margin (SNM) are reported. …”
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“…Finally, the impact of the buffer transistor design on displacement damage and total ionizing dose response is investigated.…”
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“…The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. …”
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“…The PD consists of a parallel connected common emitter configured transistor and a common base configured transistor to suppress the odd-order harmonics at the PD’s output, as well as a stacked transistor to amplify the output signal. …”
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“…The feedback capacitance is reset through a transistor biased with a constant current instead of a voltage controlled reset transistor in order to limit parasitic charge injection into a very small feedback capacitance. …”
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“…It gives emphasis on electronic emission and the vacuum tube and shows transistor circuits in parallel with electron tube circuits. …”
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“…After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). …”
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“…This work showcases the physical insights of a core-shell dual-gate (CSDG) nanowire transistor as an artificial synaptic device with short/long-term potentiation and long-term depression (LTD) operation. …”
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“…We note that the increase encompasses two related phenomena, integration of larger numbers of transistors and transistor miniaturization. Growth in the number of transistors per unit area, or chip density, allows examination of the evolution with a single measure. …”
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“…It can count signals of frequency up to 140 kHz. Transistor Transistor Logic (TTL) is used in this scaler. …”
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“…Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.…”
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