“…The test chips were irradiated up to 200 Mrad with an X-ray beam and the corresponding transistor threshold shifts and leakage currents were measured. …”
Enlace del recurso
Enlace del recurso

“…Comparisons of transistor parameters such as the gain for both types of irradiations are presented.…”
Enlace del recurso

“…The rapid growth of the electronics industry can be attributed in large part to the scalability of the transistor. Continued scaling of transistor dimensions has enabled increased functionality with each new generation of integrated circuits. …”
Enlace del recurso
Enlace del recurso

“…Subsequently, other alternatives are considered. The impact of transistor sizes and temperature on SEU tolerance is tested. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…An experimental study of the sub-THz response of II-gate strained-Si Schottky-gated MODFETs (Modulation-doped Field-Effect Transistor) was performed. The response of the strained-Si MODFET has been characterized at two frequencies: 150 and 300 GHz: The DC drain-to-source voltage transducing the THz radiation (photovoltaic mode) of 250-nm gate length transistors exhibited a non-resonant response that agrees with theoretical models and physics-based simulations of the electrical response of the transistor. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The conducted simulations positively assert the validity of the proposed design methodology, emphasizing the exploitable design space yielded by the transistor connection scheme in the voltage multiplier chain. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…A 16-nm-L(g) p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The SRE circuit adopts a transient current-boost strategy to improve the slew rate at the gate of the power transistor when a large voltage spike at the output is detected. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…In addition, a set of parameter values has been extracted from the simulated curves to implement a SPICE model of the proposed V-JFET transistor. As these devices are expected to operate under very high radiation conditions during the whole experiment life-time, a study of the radiation damage effects and the expected degradation on the device performance is also presented at the end of the paper.…”
Enlace del recurso
Enlace del recurso

“…Using this technique enables one to model and simulate systems as diverse as a six-link, closed-loop mechanism or a transistor power amplifier.…”
Enlace del recurso

“…In contrast to the most commonly used SOI technologies, this particular technology uses partially depleted SOI transistors, offering a double well structure, which shields the thin gate oxide transistors from the BOX. …”
Enlace del recurso
Enlace del recurso

“…The ion-sensitive field-effect transistor is a well-established electronic device typically used for pH sensing. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Here we demonstrate a novel method of utilizing a microfabricated solid-state quasi-reference electrode (QRE) paired with a pH-insensitive reference field effect transistor (REFET) for detection of real-time pH changes. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso