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  1. 2361
    “…In the present work, an organic MEMS sensor with a cutting-edge electro-mechanical transducer based on an active organic field effect transistor (OFET) has been demonstrated. Using poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) piezoelectric polymer as active gate dielectric in the transistor mounted on a polymeric micro-cantilever, unique electro-mechanical properties were observed. …”
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    Piezoelectric polymer gated OFET: Cutting-edge electro-mechanical transducer for organic MEMS-based sensors
  2. 2362
    “…By this, we demonstrate how to take advantage of the spin–orbit coupling for the development of the spin field-effect transistor.…”
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    Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface
  3. 2363
    “…Aptamer-functionalized graphene field effect transistor (GFET) devices were created and used to measure the strength of binding of azole antifungals to this surface. …”
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    An Aptamer-Based Biosensor for the Azole Class of Antifungal Drugs
  4. 2364
    “…The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). …”
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    The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET
  5. 2365
    “…The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. …”
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    Random telegraph noise from resonant tunnelling at low temperatures
  6. 2366
    “…In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. …”
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    Diamond FinFET without Hydrogen Termination
  7. 2367
    “…In this work, we developed a GaN-based UV passive pixel sensor (PPS) by integrating a GaN metal-semiconductor-metal (MSM) UV photodetector and a Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) on an epitaxially grown GaN layer on silicon substrate. …”
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    GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate
  8. 2368
    “…In this work, a novel photodetector device based on transistor structure with dual active layers composed of CsPbBr(3) and ZnO film is proposed. …”
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    A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr(3) and ZnO Quantum Dots
  9. 2369
    “…[Image: see text] Atomic structures and electronic properties of MoS(2)/HfO(2) defective interfaces are investigated extensively for future field-effect transistor device applications. To mimic the atomic layer deposition growth under ambient conditions, the impact of interfacial oxygen concentration on the MoS(2)/HfO(2) interface electronic structure is examined. …”
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    Computational Study of MoS(2)/HfO(2) Defective Interfaces for Nanometer-Scale Electronics
  10. 2370
    “…Here we present an adapting and spiking tactile sensor, based on a neuronal model and a piezoelectric field-effect transistor (PiezoFET). The piezoelectric sensor device consists of a metal-oxide semiconductor field-effect transistor comprising a piezoelectric aluminium-scandium-nitride (Al(x)Sc(1−x)N) layer inside of the gate stack. …”
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    A spiking and adapting tactile sensor for neuromorphic applications
  11. 2371
    “…We developed a disposable, label-free, field-effect transistor-based immunosensor (BioFET), able to detect p53(wt) in physiological buffer solutions, over a wide concentration range. …”
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    A Reliable BioFET Immunosensor for Detection of p53 Tumour Suppressor in Physiological-Like Environment
  12. 2372
    “…The sharp boundaries between the transistor components was also examined through the elemental mapping.…”
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    Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach
  13. 2373
    “…A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al(2)O(3)/AlN gate insulator layer deposited through atomic layer deposition was investigated. …”
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    Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al(2)O(3)/AlN Composite Gate Insulator
  14. 2374
    “…This work proposes a novel Carbon nanotube field-effect transistor (CNTFET) in designing a robust memory cell to overcome these soft errors. …”
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    Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell
  15. 2375
    “…A deep understanding of atomic-scale material removal can be pushed to fabricate a single atomic protrusion by removing the neighbouring atoms so that the molecule can be attached to a single atom, thereby the AFM tip and Si substrate could act as the electrodes and the molecule between them as the channel, providing basic transistor actions in a molecular transistor design. …”
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    Structure Fabrication on Silicon at Atomic and Close-To-Atomic Scale Using Atomic Force Microscopy: Implications for Nanopatterning and Nanodevice Fabrication
  16. 2376
    “…A novel uncooled thermal sensor based on a suspended transistor, fabricated in standard CMOS-SOI process, and released by dry etching, dubbed Digital TMOS, has been developed. …”
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    Toward an Accurate IR Remote Sensing of Body Temperature Radiometer Based on a Novel IR Sensing System Dubbed Digital TMOS
  17. 2377
    “…A neuromorphic module of an electronic nose (E‐nose) is demonstrated by hybridizing a chemoresistive gas sensor made of a semiconductor metal oxide (SMO) and a single transistor neuron (1T‐neuron) made of a metal‐oxide‐semiconductor field‐effect transistor (MOSFET). …”
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    Artificial Olfactory Neuron for an In‐Sensor Neuromorphic Nose
  18. 2378
    “…Here, we develop a transistor-inspired bubble energy generator for directly and efficiently harvesting energy from small bubbles. …”
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    Bubble energy generator
  19. 2379
    “…This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and (60)Co gamma-ray irradiation. …”
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    Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation
  20. 2380
    “…The more suitable topology is designed and analyzed for the switch technology based on the Silicon-Metal Oxide Semiconductor Field Effect Transistor (Si-MOSFET) and the Gallium Nitride-High Electron Mobility Transistor (GaN-HEMT). …”
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    Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems
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