“…This edition deals with the considerable advances in electronic techniques, from the introduction of field effect transistors to the development of integrated circuits. …”
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“…The treatment's exploration of a wide range of topics culminates in two eminently practical subjects, the semiconductor transistor and the laser. Subjects include operators, Eigenvalue problems, the harmonic oscillator, angular momentum, matrix formulation of…”
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“…It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The proposed transistor-level design procedure is based on the EKV modeling approach and relies on the device inversion level as a fundament…”
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“…This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.…”
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“…A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. …”
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“…It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.…”
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“…Thompson describes intuitive and ""back-of-the-envelope"" techniques for designing and analyzing analog circuits, including transistor amplifi…”
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“….; the capacitance and inductance in a.c. circuits; and the capacitance and inductance in a series. Diodes, triode, transistor equivalent…”
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“…Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the application of the transient charge technique in drift velocity; and trapping in semiconductors and in materials used in xerography, nuclear particle detectors, and space-charge-limited devices; as well as thin film transistors. …”
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“…The text progresses from MOS and bipolar device modelling to simple one and two transistor building block circuits. The final two chapters present a unified coverage of sample-data and continuous-time signal processing systems.…”
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“…Our method permits reliable and precise synchronisation of data recordings from equipment with legacy ports such as TTL (transistor-transistor logic) and RS-232, and patient-connected networkable devices, is easy to implement, flexible and inexpensive. …”
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“…Here we develop a discharge current analysis method to measure the quality of graphene integrated in a field effect transistor structure by analyzing the discharge current and examine its validity using various device structures. …”
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“…This rate is up to 5 times higher in the composite than only with an SWCNT network in the transistor channel, which in turn results in a 7-fold shorter time constant of adsorption with the composite. …”
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“…We show that operating a graphene transistor in an ambipolar mode near its neutrality point can markedly reduce the 1/f noise in graphene. …”
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“…In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si(1−)(x)Ge(x)/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. …”
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“…We proceed to demonstrate a fully integrated 5 × 5 stretchable active-matrix transistor sensor array capable of detecting strain distribution through surface deformation.…”
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“…A GaN high-electron-mobility transistor (HEMT) CGH60030D bare die from Wolfspeed was used as an active device, and input/output matching circuits were implemented on two different substrates using a thin-film process, relative dielectric constants of which were 9.8 and 40, respectively. …”
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“…This study presents a wearable full-color OLED display using a two-dimensional (2D) material-based backplane transistor. The 18-by-18 thin-film transistor array was fabricated on a thin MoS(2) film that was transferred to Al(2)O(3) (30 nm)/polyethylene terephthalate (6 μm). …”
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“…A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). …”
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