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  1. 2401
    por de Cea, M., Atabaki, A. H., Ram, R. J.
    Publicado 2021
    “…We use the parasitic photovoltaic current to self-charge the modulator and a single transistor to modulate the stored charge. This way, the electrical driver only needs to charge the nano-scale gate of the transistor, with attojoule-scale energy dissipation. …”
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    Online Artículo Texto
    Energy harvesting optical modulators with sub-attojoule per bit electrical energy consumption
  2. 2402
    “…Field-effect transistor (FET)-based biosensors have garnered significant attention for their label-free electrical detection of charged biomolecules. …”
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    Online Artículo Texto
    Surface Potential-Controlled Oscillation in FET-Based Biosensors
  3. 2403
    por Qin, Xin, Luo, Chenchen, li, Yaqian, Cui, Hao
    Publicado 2021
    “…[Image: see text] In this letter, we perform a first-principles study on the adsorption performance of the InP(3) monolayer upon three SF(6) decomposed species, including SO(2), SOF(2), and SO(2)F(2), to investigate its potential as a resistance-type, optical or field-effect transistor gas sensor. Results indicate that the InP(3) monolayer exhibits strong chemisorption upon SO(2) but weak physisorption upon SO(2)F(2). …”
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    Online Artículo Texto
    InP(3) Monolayer as a Promising 2D Sensing Material in SF(6) Insulation Devices
  4. 2404
    “…This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. …”
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    Online Artículo Texto
    32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
  5. 2405
    “…In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN transistor with a nitrogen-implanted gate region was simulated and analyzed using Sentaurus TCAD simulation, with particular emphasis on the metal contact design rule for a GaN-based high-electron-mobility transistor (HEMT) device with a variety of 2DEG concentrations grown on a silicon substrate. …”
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    Online Artículo Texto
    Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation
  6. 2406
    “…The active Insulated Gate Bipolar Transistor (IGBT) or Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) elements of the DC-AC converter are controlled by robust linear or nonlinear Port Controlled Hamiltonian (PCH) controllers. …”
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    Online Artículo Texto
    Comparative Performance Analysis of the DC-AC Converter Control System Based on Linear Robust or Nonlinear PCH Controllers and Reinforcement Learning Agent
  7. 2407
    “…An improved structure for an Insulated Gate Bipolar Transistor (IGBT) with a separated buffer layer is presented in order to improve the trade-off between the turn-off loss (E(off)) and on-state voltage (V(on)). …”
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    Online Artículo Texto
    Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT
  8. 2408
    “…Whereas in the past, the primary job of the computer architect was to translate improvements in operating frequency and transistor count into performance, now power efficiency must be taken into account at every step of the design process. …”
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    Computer Architecture Techniques for Power-Efficiency
  9. 2409
    “…Polymer electronics is the science behind many important new developments in technology, such as the flexible electronic display (e-ink) and many new developments in transistor technology. Solar cells, light-emitting diodes, and transistors are all areas where plastic electronics is likely to, or is already having, a serious impact on our daily lives. …”
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    Polymer electronics
  10. 2410
    por Li, Jin Jin, Zhu, Ka-Di
    Publicado 2013
    “…Some quantum optical devices based on optomechanical system are also presented in the monograph, such as the Kerr modulator, quantum optical transistor, optomechanical mass sensor, and so on. But most importantly, we extend the idea of typical optomechanical system to coupled mechanical resonator system and demonstrate that the combined two-level structure…”
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    Generalized optomechanics and its applications: quantum optical properties of generalized optomechanical system
  11. 2411
    por Diehl, P
    Publicado 2009
    “…IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. …”
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    The Gm/Id methodology, a sizing tool for low-voltage analog CMOS circuits
  12. 2412
    por Temple, L Parker
    Publicado 2012
    “…Starting with a brief description of the physics that enabled the development of the first transistor, Implosion covers the need for standardizing military electronics, which began during World War II and continu…”
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    Implosion: lessons from national security, high reliability spacecraft, electronics, and the forces which changed them
  13. 2413
    por Williams, John
    Publicado 2008
    “…In a nominal schedule of 12 weeks, two days and about 10 hours per week, the entire verilog language is presented, from the basics to everything necessary for synthesis of an entire 70,000 transistor, full-duplex serializer - deserializer, including synthesizable PLLs. …”
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    Digital VLSI design with Verilog: a textbook from Silicon Valley Technical Institute
  14. 2414
    “…Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. …”
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    Linear CMOS RF power amplifiers: a complete design workflow
  15. 2415
    por Pal, Ajit
    Publicado 2015
    “…For a seamless understanding of the subject, basics of MOS circuits has been introduced at transistor, gate and circuit level; followed by various low-power design methodologies, such as supply voltage scaling, switched capacitance minimization techniques and leakage power minimization approaches. …”
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    Low-power VLSI circuits and systems
  16. 2416
    por Cravero, J M, Royer, J P
    Publicado 1998
    “…This paper presents an unusual use of IGBT (Insulated Gate Bipolar Transistor) modules in capacitor discharge power supplies to achieve different current pulse shapes. …”
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    The IGBT as an element of switch discharge with a linear mode use in capacitor discharge power converters
  17. 2417
    por Hamaguchi, Chihiro
    Publicado 2001
    “…Examples include recent progress in semiconductor quantum structures such as two-dimensional electron-gas systems, ballistic transport, the quantum Hall effect, the Landauer formula, the Coulomb blockade and the single-electron transistor.…”
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    Basic semiconductor physics
  18. 2418
    por Hermosa Donate, Antonio
    Publicado 2013
    Tabla de Contenidos: “…Introducción a los transistores -- Unidad 14. El transistor bipolar. Principios y aplicaciones -- Unidad 15. …”
    Libro
    Electrónica aplicada : CF instalaciones de telecomunicaciones /
  19. 2419
    “…We developed 2MDR (MultiModal Visual Stimulation to Desensitize Rodents), a novel, open-source, low-cost, customizable device that can be integrated in and transistor–transistor logic (TTL) controlled by commercial rodent behavioral setups. 2MDR allows the design and precise steering of multimodal visual stimuli in the head direction of freely moving mice. …”
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    2MDR, a Microcomputer-Controlled Visual Stimulation Device for Psychotherapy-Like Treatments of Mice
  20. 2420
    “…This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. …”
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    Online Artículo Texto
    Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier
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