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  1. 2421
    “…The waste organic solvents from thin-film-transistor liquid-crystal display (TFT-LCD) production is characterized by large quantities, multiple types, and complex compositions. …”
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    Detection Method and Common Characteristics of Waste Solvent from Semiconductor Industry
  2. 2422
    “…The organic thin-film transistor is advantageous for monolithic three-dimensional integration attributed to low temperature and facile solution processing. …”
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    Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays
  3. 2423
    “…Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. …”
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    Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications
  4. 2424
    “…In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. …”
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    Fluorinated Graphene as High Performance Dielectric Materials and the Applications for Graphene Nanoelectronics
  5. 2425
    “…Here, the single-ended RF output signal of the LNA is translated into differential signal using an NMOS-PMOS (n-channel metal-oxide-semiconductor, p-channel metal-oxide-semiconductor) transistor differential pair instead of the conventional NMOS-NMOS transistor configuration, for the RF amplification stage of the double-balanced mixer. …”
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    Toward Realization of 2.4 GHz Balunless Narrowband Receiver Front-End for Short Range Wireless Applications
  6. 2426
    Publicado 2016
    “…A precise synchronization of the stimulus delivery with fMRI slice acquisition was achieved by programming the proposed device to detect the 5 V transistor–transistor logic (TTL) trigger signals generated by the MRI scanner. …”
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    Design and Application of a New Automated Fluidic Visceral Stimulation Device for Human fMRI Studies of Interoception
  7. 2427
    “…Ionic liquid gating is a versatile method for inducing a metal-insulator transition in field-effect transistor device structures. The mechanism of carrier doping in metal oxide films is under debate. …”
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    Oxygen Vacancy in WO(3) Film-based FET with Ionic Liquid Gating
  8. 2428
    “…Herein, a label-free single molecule detection of HIV-1 p24 capsid protein with a large (wide-field) single-molecule transistor (SiMoT) sensor is proposed. The system is based on an electrolyte-gated field-effect transistor whose gate is bio-functionalized with the antibody against the HIV-1 p24 capsid protein. …”
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    Ultra-low HIV-1 p24 detection limits with a bioelectronic sensor
  9. 2429
    “…The in-pixel source follower transistor and the integration capacitor on the floating diffusion node cause linearity degradation. …”
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    A Highly Linear CMOS Image Sensor Design Based on an Adaptive Nonlinear Ramp Generator and Fully Differential Pipeline Sampling Quantization with a Double Auto-Zeroing Technique
  10. 2430
    “…Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. …”
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    Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad
  11. 2431
    “…Some adjustment factors are introduced to account for transistor sizing and wiring area in the layout, gate switching activity, post-layout performance drop, etc. …”
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    NeuroSim Simulator for Compute-in-Memory Hardware Accelerator: Validation and Benchmark
  12. 2432
    “…Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. …”
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    High electron mobility in strained GaAs nanowires
  13. 2433
    “…A stable reference electrode (RE) plays a crucial role in the performance of an ion-sensitive field-effect transistor (ISFET) for bio/chemical sensing applications. …”
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    Realization of a PEDOT:PSS/Graphene Oxide On-Chip Pseudo-Reference Electrode for Integrated ISFETs
  14. 2434
    “…Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate a large number of transistor devices per unit area. This approach has emerged to accommodate the higher demand of data processing capability and to circumvent the scaling limitation. …”
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    Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices
  15. 2435
    “…We also propose and demonstrate a three-terminal switchable architecture exploiting opto-mechanical Casimir interactions that can lay the foundations of a Casimir transistor. Beyond the paradigm of Casimir forces between two objects in different geometries, our Casimir transistor represents an important development for controlling three-body virtual photon interactions and will have potential applications in sensing and information processing.…”
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    Observation and control of Casimir effects in a sphere-plate-sphere system
  16. 2436
    “…The design uses pass transistor logic and achieves the reduction of the number of transistors used. …”
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    Low power, less occupying area, and improved speed of a 4-bit router/rerouter circuit for low-density parity-check (LDPC) decoders
  17. 2437
    “…For the true-random trigger part, the source of randomness is the avalanche effect on a transistor emitter-base diode. The system can be used either as a plug-in module for VME systems or as a standalone device controlled via a standard USB link by a PC running LabVIEW.…”
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    A compact plug-in module for LHC-like trigger emulation
  18. 2438
    “…The monograph first summarizes the basics of III/V photodetectors, transistor and noise models, bit-error rate, sensitivity and analog circuit design, thus enabling readers to understand the circuits described in the main part of the book. …”
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    Highly Sensitive Optical Receivers
  19. 2439
    por Voinigescu, Sorin
    Publicado 2013
    “…A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits using nanoscale CMOS, SiGe BiCMOS and III-V technologies. …”
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    High-frequency integrated circuits
  20. 2440
    por Vlasselaer, Maarten, Dehaen, Wim
    Publicado 2016
    “…The objective of this review is to give an overview of the synthetic methods to prepare different indolo[3,2-b]carbazoles and similar systems with a potential use in electro-optical devices such as OLEDs (organic light emitting diode), OPVs (organic photovoltaic) and OFETs (organic field effect transistor). Some further modifications to the core units and their implications for specific applications are also discussed.…”
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    Synthesis of Linearly Fused Benzodipyrrole Based Organic Materials
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