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  1. 2441
    “…However, it has been found that the applied electric field in the sensor layer also affects the transistor operation in the adjacent circuit layer. …”
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    Reduction techniques of the back gate effect in the SOI Pixel Detector
  2. 2442
    por Davis, E A, Falconer, Isabel
    Publicado 2002
    “…These include the creation of the subject of atomic physics as well as the broader long term developments which can be traced from vacuum valves and the transistor through to the microelectronics revolution.…”
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    J.J. Thompson and the discovery of the electron
  3. 2443
    “…Besides, the device also exhibits multi-functionality including transistor and phototransistors with excellent photodector performance. …”
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    Online Artículo Texto
    High-performance vertical field-effect organic photovoltaics
  4. 2444
    por Goharian, M., Khan, R. F. H.
    Publicado 2010
    “…The Varian RPM system provides an external breathing signal; it also records transistor-transistor logic (TTL) ‘X-Ray ON’ status signal from the CT scanner in a text file. …”
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    Texto
    Measurement of time delay for a prospectively gated CT simulator
  5. 2445
    “…Selection of appropriate channel material is the key to design high performance tunnel field effect transistor (TFET), which promises to outperform the conventional metal oxide semiconductor field effect transistor (MOSFET) in ultra-low energy switching applications. …”
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    Online Artículo Texto
    Scalability assessment of Group-IV mono-chalcogenide based tunnel FET
  6. 2446
    “…The properties as well as solid‐state structures, singlet fission, and organic field‐effect transistor (OFET) performance of three tetrafluoropentacenes (1,4,8,11: 10, 1,4,9,10: 11, 2,3,9,10: 12) are compared herein. …”
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    Online Artículo Texto
    Modulating the Electronic and Solid‐State Structure of Organic Semiconductors by Site‐Specific Substitution: The Case of Tetrafluoropentacenes
  7. 2447
    “…Graphene ink was drop-casted to form the transistor channel and PNA probes were immobilized on the graphene channel, enabling label-free DNA detection. …”
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    Online Artículo Texto
    Printable graphene BioFETs for DNA quantification in Lab-on-PCB microsystems
  8. 2448
    “…The effects of such transistor characteristics on the performance and capabilities of various circuit types—such as an inverter ring oscillator (RO), a full adder (FA) circuit, and a static random-access memory (SRAM)—were assessed. …”
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    Online Artículo Texto
    Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage
  9. 2449
    “…The apparatus sends a transistor-transistor-logic signal every 1/10 turn of the disc to a personal computer through a data acquisition system following the chick’s approach to the imprinting object on the monitor. …”
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    Online Artículo Texto
    Imprintability of Newly Hatched Domestic Chicks on an Artificial Object: A Novel High Time-Resolution Apparatus Based on a Running Disc
  10. 2450
    “…In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed and analyzed through a technology computer-aided design (TCAD) simulation. …”
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    Online Artículo Texto
    3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence
  11. 2451
    “…Finally, organic field-effect transistor devices using two-side π-extended rubrene were fabricated, and their carrier mobilities were measured. …”
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    Online Artículo Texto
    π-Extended Rubrenes via Dearomative Annulative π-Extension Reaction
  12. 2452
    por Butnicu, Dan
    Publicado 2023
    “…A setup based on an EPC eGaN FET transistor enclosed in a 9059/30 V evaluation board with a 12 V input voltage/1.2 V output voltage was tested in order to achieve the study’s main scope. …”
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    Online Artículo Texto
    A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study
  13. 2453
    por Ullán, M
    Publicado 2008
    “…As previously reported, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. …”
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    Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade
  14. 2454
    “…The variants include differences in pixel and diode size, the in-pixel source follower transistor size and the capacitance of the readout node to optimise for low noise and sensitivity to small amounts of charge. …”
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    Advanced pixel architectures for scientific image sensors
  15. 2455
    por Nagel, M
    Publicado 2011
    “…Comparisons of transistor parameters such as the gain for both types of irradiations are presented.…”
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    Neutron and Proton Tests of Different Technologies for the Upgrade of Cold Readout Electronics of the ATLAS Hadronic Endcap Calorimeter
  16. 2456
    por Nagel, M
    Publicado 2012
    “…Comparisons of transistor parameters such as the gain for both types of irradiations are presented.…”
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    Neutron and Proton Tests of Different Technologies for the Upgrade of Cold Readout Electronics of the ATLAS Hadronic Endcap Calorimeter
  17. 2457
    “…The continuous evolution of fabrication technology of semiconductor components – shrinking transistor geometry, power supply, speed, and logic density – has significantly reduced the reliability of very deep submicron integrated circuits, in face of various internal and external sources of noise. …”
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    Fault-tolerance techniques for SRAM-based FPGAs
  18. 2458
    por Zhao, Dixian, Reynaert, Patrick
    Publicado 2015
    “…The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. …”
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    CMOS 60-GHz and E-band power amplifiers and transmitters
  19. 2459
    por He, Li, Yang, Dingjiang, Ni, Guoqiang
    Publicado 2016
    “…Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.…”
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    Technology for advanced focal plane arrays of HgCdTe and AIGaN
  20. 2460
    por Lynn, David
    Publicado 2017
    “…We have developed circuitry consisting of a GaNFET transistor and a HV Multiplier circuit to disable a failed sensor. …”
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    Radiation Hard GaNFET High Voltage Multiplexing (HV Mux) for the ATLAS Upgrade Silicon Strip Tracker
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