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2461“…As Moore's Law drives the silicon industry towards higher transistor counts, processor designs are becoming more and more complex. …”
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2462“…Unlike in the traditional transistor with the gate typically located between the source and the drain, the bottom silicon plate becomes the gate here and the anode terminal is located between the umbrella cathode and the gate. …”
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2463“…The authors describe two state-of-the-art, complementary organic technologies, characteristics and modeling of their transistors and their capability to implement circuits and systems on foil. …”
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2464por Song, Bang-Sup“…This book shows readers to avoid common mistakes in circuit design, and presents classic circuit concepts and design approaches from the transistor to the system levels. The discussion is geared to be accessible and optimized for practical designers who want to learn to create circuits without simulations. …”
Publicado 2016
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2465por Bindal, Ahmet“…It is written for students and young professionals who have basic circuit theory background and want to learn more about passive circuits, diode and bipolar transistor circuits, the state-of-the-art CMOS logic family and its interface with older logic families such as TTL, sensors and sensor physics, operational amplifier circuits to condition sensor signals, data converters and various circuits used in electro-mechanical device control in embedded systems. …”
Publicado 2017
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2466por Dorda Martin, A, Ballabriga, R, Borghello, G, Campbell, M, Deng, W, Hong, G H, Kremastiotis, I, Snoeys, W, Termo, G“…The impact of the back bias on the transistor behavior has also been measured to provide the designers with accurate models. …”
Publicado 2023
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2467“…The results are commented in view of the use of these transistors in low-noise front-end circuits. (22 refs).…”
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2468por Atkin, E, Ilyushchenko, V I, Kondratenko, S, Maslennikov, V, Meshcheriakov, V, Mishin, Yu, Volkov, Yu“…The features of this array are: implementation with an inexpensive bipolar process despite containing an equal number of NPN and PNP structures with well matched characteristics, supply voltages from 1.5 V to 15 V, transistor current gains Bst~100 and unity gain frequencies Ft > 3 GHz at collector currents of (100...300) mu A, high- and low-ohmic resistors, MOS capacitors, minimum two variable plating levels available. …”
Publicado 2002
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2469“…The long-term stability of the transistor's Ids-Vgs characteristic was investigated using the isochronal annealing technique. …”
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2470“…The resultant SnO(2)nanowires possess diameters from 50 to 100 nm and lengths up to tens of mircrometers. The field-effect transistors based on single SnO(2)nanowire exhibit that as-synthesized nanowires have better transistor performance in terms of transconductance and on/off ratio. …”
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2471“…This paper demonstrates curcumin reduced graphene oxide-silk field effect transistor for selective and sensitive detection of ammonia in air. …”
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2472por Zhan, Tianzhuo, Xu, Mao, Cao, Zhi, Zheng, Chong, Kurita, Hiroki, Narita, Fumio, Wu, Yen-Ju, Xu, Yibin, Wang, Haidong, Song, Mengjie, Wang, Wei, Zhou, Yanguang, Liu, Xuqing, Shi, Yu, Jia, Yu, Guan, Sujun, Hanajiri, Tatsuro, Maekawa, Toru, Okino, Akitoshi, Watanabe, Takanobu“…For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. …”
Publicado 2023
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2473por Otari, Sachin V., Kumar, Manoj, Anwar, Muhammad Zahid, Thorat, Nanasaheb D., Patel, Sanjay K. S., Lee, Dongjin, Lee, Jai Hyo, Lee, Jung-Kul, Kang, Yun Chan, Zhang, Liaoyuan“…The transfer characteristic of the ZnO thin-film transistor memory device showed large clockwise hysteresis behaviour because of charge carrier trapping in the NAu-rGO nanocomposite. …”
Publicado 2017
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2474por Masurkar, Nirul, Thangavel, Naresh Kumar, Yurgelevic, Sally, Varma, Sundeep, Auner, Gregory W., Reddy Arava, Leela Mohana“…We have also successfully shown Escherichia coli (E. coli) bacteria sensing from the suspended MoS(2) transistor by functionalizing dielectric layer with E. coli antibodies. …”
Publicado 2021
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2475“…This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. …”
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2476por Nagel, Martin“…Comparisons of transistor parameters such as the gain for both types of irradiations are presented.…”
Publicado 2013
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2477por Heikkila, Tero T“…It also introduces a number of electronic devices, including the single-electron transistor, the superconducting tunnel junction refrigerator, and the superconducting quantum bit.…”
Publicado 2013
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2478“…This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level. Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips. …”
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2479“…Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. …”
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2480por Albert, David Z“…Come base di una tecnologia di consumo che comprende il laser e il transistor, la meccanica quantistica è tutt'altro che nuova (il "quanto di energia" è familiare anche ai profani), e resta però, nei suoi fondamenti concettuali, un enigma inquietante. …”
Publicado 2002
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