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  1. 2541
    por Shin, Changhwan
    Publicado 2016
    “…The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. …”
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    Variation-aware advanced CMOS devices and SRAM
  2. 2542
    por Basdevant, Jean-Louis
    Publicado 2017
    “…Toute la physique actuelle, du transistor à l’astrophysique, de l’énergie photovoltaïque à la physique des particules et aux interactions fondamentales contient une part prédominante de physique quantique. …”
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    Introduction à la physique quantique
  3. 2543
    “…A first LaGEMPix prototype that combines a triple Gas Electron Multiplier and a highly pixelated readout based on a matrix of organic photodiodes coated on an oxide thin film transistor backplane has been built. The first version of the LaGEMPix has proven to have a limited spatial resolution, mainly attributed to the isotropic emission of the scintillation photons within the GEM holes. …”
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    A Large Area GEMPix detector for treatment plan verification in hadron therapy
  4. 2544
    “…The design will be presented with some experimental results also correlating to some transistor measurements.…”
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    Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
  5. 2545
    “…Moreover, the proposed setup can also be used as a high-performance transistor, in terms of output–to–input signal and differential gain. …”
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    Online Artículo Texto
    Hybrid quantum thermal machines with dynamical couplings
  6. 2546
    “…These nontrivial interaction effects were found in both linear and nonlinear transport regimes, which manifested in charge and thermal currents, rectification effects, and the linear thermal transistor effect.…”
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    Online Artículo Texto
    Thermoelectric Rectification and Amplification in Interacting Quantum-Dot Circuit-Quantum-Electrodynamics Systems
  7. 2547
    “…A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. …”
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    Online Artículo Texto
    AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
  8. 2548
    “…A single transistor preamplifier circuit was designed to facilitate electrical detection of mechanical oscillations in nanoelectromechanical systems (NEMSs) at low temperatures. …”
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    Online Artículo Texto
    Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures
  9. 2549
    “…However, the classical mobility calculation methods such as Hall effect and transfer length method have limitations in accurately extracting the mobility of GaN High Electron Mobility Transistor (HEMT) due to their inability to consider the resistance in non-gate region or their high fabrication costs. …”
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    Online Artículo Texto
    Computational-fitting method for mobility extraction in GaN HEMT
  10. 2550
    “…Photodetectors in a configuration of field effect transistor were fabricated based on individual W(18)O(49) nanowires. …”
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    W(18)O(49) Nanowires as Ultraviolet Photodetector
  11. 2551
    “…A two-dimensional electron gas (2DEG) situated nearby a single layer of self-assembled quantum dots (QDs) in an inverted high electron mobility transistor (HEMT) structure is used as a detector for time-resolved tunneling measurements. …”
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    A Two-Dimensional Electron Gas as a Sensitive Detector for Time-Resolved Tunneling Measurements on Self-Assembled Quantum Dots
  12. 2552
    “…This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. …”
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    Online Artículo Texto
    Strained MOSFETs on ordered SiGe dots
  13. 2553
    por Li, Jin-Jin, Zhu, Ka-Di
    Publicado 2012
    “…Based on this spin-nanotube optomechanical system, we also conceptually design a single photon router and a quantum microwave transistor, with ultralow pump power (~ pW) and tunable switching time, which should provide a unique platform for the study of spin-based microwave quantum optics and quantum information processing.…”
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    Online Artículo Texto
    Spin-based Optomechanics with Carbon Nanotubes
  14. 2554
    “…Nanoribbons with widths ranging from 20 to 80 nm and conductivities of >10(4) S m(−1) are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (≤115 °C).…”
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    Online Artículo Texto
    Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography
  15. 2555
    “…An ultra-high resolution, extended depth range, full-phase interferometry, and high-speed complementary metal-oxide semiconductor transistor camera detection provided unprecedented performance for the precise quantification of a wide range of the ocular surface. …”
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    Online Artículo Texto
    Ultra-high resolution and long scan depth optical coherence tomography with full-phase detection for imaging the ocular surface
  16. 2556
    por Tangsrirat, Worapong
    Publicado 2014
    “…Simulation results using real transistor model parameters ALA400 are also included to confirm the theory.…”
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    Online Artículo Texto
    SFG Synthesis of General High-Order All-Pass and All-Pole Current Transfer Functions Using CFTAs
  17. 2557
    “…A shadow mask process was developed to fabricate arrays of hundreds of graphene transistors with average mobility of ∼1500 cm(2) V(–1) s(–1) and yield exceeding 98%. …”
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    Scalable Production of Highly Sensitive Nanosensors Based on Graphene Functionalized with a Designed G Protein-Coupled Receptor
  18. 2558
    por Deka, Krisha M, Roy, Soumik
    Publicado 2014
    “…BACKGROUND: Enzyme modified field effect transistor (ENFET) may be used to represent the variable conductance of transmitter-gated ion channels in the postsynaptic region of the neuron. …”
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    Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft
  19. 2559
    “…The pulse generator comprises three parts, a step recovery diode, a field-effect transistor and a Schottky diode, used to eliminate the positive and negative ringing of pulse. …”
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    A Novel Low-Ringing Monocycle Picosecond Pulse Generator Based on Step Recovery Diode
  20. 2560
    por Lee, Min Su, Lee, Hee Chul
    Publicado 2014
    “…In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. …”
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    Online Artículo Texto
    Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout
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