Materias dentro de su búsqueda.
Mostrando 2,561 - 2,580 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.18s Limitar resultados
  1. 2561
    “…We propose a novel technique to investigate the gas sensitivity of materials for implementation in field-effect transistor-based gas sensors. Our technique is based on the measurement of the surface charge induced by gas species adsorption, using an electrometer. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Novel Concept of Gas Sensitivity Characterization of Materials Suited for Implementation in FET-Based Gas Sensors
  2. 2562
    “…The shift of threshold voltage for ML MoS(2) transistor was analyzed as a function of reaction time. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Chemical doping of MoS(2) multilayer by p-toluene sulfonic acid
  3. 2563
    “…Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. …”
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
  4. 2564
    “…Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects
  5. 2565
    “…We present a novel microfluidic system that integrates droplet microfluidics with a silicon nanoribbon field-effect transistor (SiNR FET), and utilize this integrated system to sense differences in pH. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Integration of a Droplet-Based Microfluidic System and Silicon Nanoribbon FET Sensor
  6. 2566
    “…This article presents the raw and analyzed data from a set of experiments performed to study the role of junctions on the electrostatic gating of carbon nanotube (CNT) network field effect transistor (FET) aptasensors. It consists of the raw data used for the calculation of junction and bundle densities and describes the calculation of metallic content of the bundles. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Data on liquid gated CNT network FETs on flexible substrates
  7. 2567
    por Xie, Shuang, Theuwissen, Albert
    Publicado 2019
    “…To provide thermal information required for temperature compensation, six scattered bipolar junction transistor (BJT)-based temperature sensors replace six image pixels inside the array. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Compensation for Process and Temperature Dependency in a CMOS Image Sensor
  8. 2568
    “…The controlled charge transport throughout the polyviologen layer gave rise to the fabrication of EC displays which are potentially suitable for the thin film transistor (TFT) substrate as the counter electrodes with submillimeter pixels. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Synthesis of Dimethyl-Substituted Polyviologen and Control of Charge Transport in Electrodes for High-Resolution Electrochromic Displays
  9. 2569
    “…In this work, we present a novel pH sensor using efficient laterally coupled structure enabled by Complementary Metal-Oxide Semiconductor (CMOS) Fin Field-Effect Transistor (FinFET) processes. This new sensor features adjustable sensitivity, wide sensing range, multi-pad sensing capability and compatibility to advanced CMOS technologies. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Dynamic pH Sensor with Embedded Calibration Scheme by Advanced CMOS FinFET Technology
  10. 2570
    por Wu, Jian, Yang, Jinglei
    Publicado 2017
    “…Our results suggest that superlong HBA nanobelts provide a promising intelligent fluorescent thermometer and an organic field-effect transistor.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Superlong Salicylideneaniline Semiconductor Nanobelts Prepared by a Magnetic Nanoparticle-Assisted Self-Assembly Process for Luminescence Thermochromism
  11. 2571
    “…This work explores the photodetection properties of a heterostructure consisting of a graphene field effect transistor covered by a film of silica-encapsulated colloidal QDs. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Photodetecting Heterostructures from Graphene and Encapsulated Colloidal Quantum Dot Films
  12. 2572
    “…We used an isoenergetic transistor power supply with a microsecond voltage pulse generator and a tungsten tool electrode of diameter d = 381 μm. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Electrodischarge Drilling of Microholes in c-BN
  13. 2573
    “…Improvement of magnetic, electronic, optical, and catalytic properties in cutting-edge technologies including drug delivery, energy storage, magnetic transistor, and spintronics requires novel nanomaterials. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Synthesis, Characterization, and Optimization of Magnetoelectric BaTiO(3)–Iron Oxide Core–Shell Nanoparticles
  14. 2574
    “…In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
  15. 2575
    “…The design addressed here exploits directly at the transistor level, with commercial components, the proposed interface; the obtained performance is valuable considering both the discrete elements and the application. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Silicon Photomultiplier Sensor Interface Based on a Discrete Second Generation Voltage Conveyor
  16. 2576
    “…From this idea we implement a constructive procedure that reveals a hierarchy of genetic circuits, ubiquitous across species, that are surprising analogues to the emblematic circuits of solid-state electronics: starting from the transistor and progressing to ring oscillators, current-mirror circuits to toggle switches and flip-flops. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Circuits with broken fibration symmetries perform core logic computations in biological networks
  17. 2577
    por Takahashi, Mitsue, Sakai, Shigeki
    Publicado 2021
    “…Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Area-Scalable 10(9)-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process
  18. 2578
    por Lee, Hoontaek, Shin, Kumjae, Moon, Wonkyu
    Publicado 2021
    “…We utilized scanning probe microscopy (SPM) based on a metal-oxide-silicon field-effect transistor (MOSFET) to image interdigitated electrodes covered with oxide films that were several hundred nanometers in thickness. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Capacitive Measurements of SiO(2) Films of Different Thicknesses Using a MOSFET-Based SPM Probe
  19. 2579
    por Na, Jaeyeop, Cheon, Jinhee, Kim, Kwangsoo
    Publicado 2021
    “…In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics
  20. 2580
    “…This paper presents a novel wearable hybrid harvester system as a glove that contains four distinct scavenging modules of flexible transducer film, photosensitive 3D dual-gate thin-film transistor, and a particular power management box. Each single module is formed by a piezoelectric-charge-gated TFT (PCGTFT). …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    A System-Level Approach towards a Hybrid Energy Harvesting Glove
Herramientas de búsqueda: RSS