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  1. 2601
    “…- How have applications of fundamental science (such as the steam engine, the laser, the electric generator, the transistor) affected our lives? - How does the evidence for non-scientific ideas, such as UFOs, ESP, and the like, differ from the evidence for accepted scientific results?…”
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    Understanding physics
  2. 2602
    por Williams, John Michael
    Publicado 2014
    “…The entire Verilog language is presented, from the basics to everything necessary for synthesis of an entire 70,000 transistor, full-duplex serializer-deserializer, including synthesizable PLLs.  …”
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    Digital VLSI design with Verilog: a textbook from Silicon Valley Polytechnic Institute
  3. 2603
    por Kubát, M
    Publicado 1984
    “…A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four­ layer structure and the solution of the four-layer structure in various modes. …”
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    Power semiconductors
  4. 2604
    por Hommels, Bart
    Publicado 2017
    “…We have developed circuitry consisting of a Gallium Nitride Field-Effect transistor (GaNFET) and a HV Multiplier circuit to disable a failed sensor. …”
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    High-Voltage Multiplexing for ATLAS ITk
  5. 2605
    por Buchwald, Aaron, Martin, Kenneth W
    Publicado 1995
    “…Part II presents the transistor-level design, and measured results, of fundamental building blocks and test circuits. …”
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    Integrated fiber-optic receivers
  6. 2606
    “…The most sensitive part to radiation effects in a MOS transistor is the gate oxide. One way to reduce the effects of ionizing radiation in the gate oxide is to reduce its thickness, which is a natural trend in modern technologies. …”
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    Submicron CMOS technologies for high energy physics and space applications
  7. 2607
    “…This paper proposes a method for assessing the integrity of a series of insulated-gate bipolar transistor (IGBT) power stacks during factory-acceptance tests and service stops. …”
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    IGBT Power Stack Integrity Assessment Method for High-Power Magnet Supplies
  8. 2608
    “…In this paper, the $V_{ce}$ method with sensing current is considered for the estimation of the junction temperature and the aging detection of high-current insulated gate bipolar transistor (IGBT) modules used in this specialized application. …”
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    On $V_{ce}$ Method: In Situ Temperature Estimation and Aging Detection of High-Current IGBT Modules Used in Magnet Power Supplies for Particle Accelerators
  9. 2609
    “…This paper comprises a concept of an active frequency multiplier with the use of one FET transistor and a special adaptive bias circuit in order to obtain a very wide input power range when the output power is stable. …”
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    Online Artículo Texto
    Microwave Frequency Doubler with Improved Stabilization of Output Power
  10. 2610
    “…In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics. …”
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    Online Artículo Texto
    Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
  11. 2611
    “…The design of the Ternary Full Adders (TFA) employing Carbon Nanotube Field-Effect Transistors (CNFET) has been widely presented in the literature. …”
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    Online Artículo Texto
    Ternary Full Adder Designs Employing Unary Operators and Ternary Multiplexers
  12. 2612
    “…Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). …”
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    Online Artículo Texto
    Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing
  13. 2613
    por Adesina, Naheem Olakunle
    Publicado 2023
    “…This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a metal-oxide semiconductor type graphene nano-ribbon field effect transistor (MOS-GNRFET) and compares the results with another SRAM cell designed using a PTM 10 nm FinFET node. …”
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    Online Artículo Texto
    Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell
  14. 2614
    “…The developed QR-flyback converter was operated in discontinuous conduction mode, and the pulse-width modulation (PWM) control chip was used to switch and conduct at the resonant valley of the drain-source voltage on the metal-oxide-semiconductor field-effect transistor (MOSFET) switch to reduce the switching loss. …”
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    Online Artículo Texto
    Development and Implementation of LED Street Lights with Bright and Extinguishable Controls and Power Converters
  15. 2615
    “…In this paper, a new carbon nanotube field effect transistor (CNTFET)-based second-order fully differential all-pass filter circuit is presented. …”
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    Online Artículo Texto
    Novel Second-Order Fully Differential All-Pass Filter Using CNTFETs
  16. 2616
    por Shukla, Deepak, Rajeswaran, Manju
    Publicado 2008
    “…Accordingly, thin-film transistor devices comprising this compound show n-type behavior with high field-effect electron moblity ca 6 cm(2)/Vs [Shukla, Nelson, Freeman, Rajeswaran, Ahearn, Meyer & Carey(2008 ▶). …”
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    Texto
    N,N′-Dicyclo­hexyl­naphthalene-1,8;4:5-dicarboximide
  17. 2617
    “…Here, we demonstrate in situ–directed growth of such organic nanostructures between pre-fabricated contacts, which are source–drain gold electrodes on a transistor platform (bottom-gate) on silicon dioxide patterned by a combination of optical lithography and electron beam lithography. …”
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    Online Artículo Texto
    In situ–Directed Growth of Organic Nanofibers and Nanoflakes: Electrical and Morphological Properties
  18. 2618
    “…A vapor cooling condensation system was used to deposit high quality intrinsic ZnO thin films and intrinsic ZnO nanorods as the sensing membrane of extended-gate field-effect-transistor (EGFET) glucose biosensors. The sensing sensitivity of the resulting glucose biosensors operated in the linear range was 13.4 μA mM(−1) cm(−2). …”
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    Online Artículo Texto
    Investigation of a Photoelectrochemical Passivated ZnO-Based Glucose Biosensor
  19. 2619
    “…This paper reports the design, characterization and implementation of a Fiber Bragg Grating (FBG)-based temperature sensor for an Insulted-Gate Bipolar Transistor (IGBT) in a solar panel inverter. The FBG is bonded to the higher Coefficient of Thermal Expansion (CTE) side of a bimetallic strip to increase its sensitivity. …”
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    Online Artículo Texto
    A Fiber Bragg Grating—Bimetal Temperature Sensor for Solar Panel Inverters
  20. 2620
    “…In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. …”
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    Online Artículo Texto
    Ferroelectric memory based on nanostructures
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