Materias dentro de su búsqueda.
Mostrando 2,621 - 2,640 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.14s Limitar resultados
  1. 2621
    “…The existence of multi-quantum dots is supported by the low-temperature measurements on a field effect transistor structure device. The resulting Coulomb blockade diamonds shown in the color scale plot together with the number of Coulomb peaks exhibit the characteristics of the so-called ‘stochastic Coulomb blockade’. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Evidence for formation of multi-quantum dots in hydrogenated graphene
  2. 2622
    “…We have revealed practical charge injection at metal and organic semiconductor interface in organic field effect transistor configurations. We have developed a facile interface structure that consisted of double-layer electrodes in order to investigate the efficiency through contact metal dependence. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    On Practical Charge Injection at the Metal/Organic Semiconductor Interface
  3. 2623
    “…This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory
  4. 2624
    “…We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F(16)CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F(16)CuPc trapped electrons alone due to abundant electron density. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Solution processed molecular floating gate for flexible flash memories
  5. 2625
    “…The technique is tested with Indium Tin Oxide (ITO) and with poly(3-hexylthiophene) (P3HT) nanowires for organic transistor applications.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    EFM data mapped into 2D images of tip-sample contact potential difference and capacitance second derivative
  6. 2626
    “…For this reason, we have studied the impact of the excitonic effects and the AOC on graphene device performance by using X-ray absorption spectromicroscopy on an actual graphene transistor in operation. Our work shows that the excitonic effect and the AOC are tunable by gate bias or metal contacts, both of which alter the Fermi energy, and are orbital-specific.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact
  7. 2627
    “…We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
  8. 2628
    “…This work presents the modelling of impulsional pH variations in microvolume related to water-based electrolysis and hydrogen peroxide electrochemical oxidation using an Electrochemical Field Effect Transistor (ElecFET) microdevice. This ElecFET device consists of a pH-Chemical FET (pH-ChemFET) with an integrated microelectrode around the dielectric gate area in order to trigger electrochemical reactions. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Modelling of Impulsional pH Variations Using ChemFET-Based Microdevices: Application to Hydrogen Peroxide Detection
  9. 2629
    “…The switching transistors are never ON at the same time. Characteristics of various delay element implementations are presented and verified by circuit simulations. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Break-before-Make CMOS Inverter for Power-Efficient Delay Implementation
  10. 2630
    por Wang, Yue, Yang, Qiuping, Wang, Zhimin
    Publicado 2015
    “…Both of protein and solid-state nanopores have been extensively investigated for a series of issues, from detection of ionic current blockage to field-effect-transistor (FET) sensors. A newly released protein nanopore sequencer has shown encouraging potential that nanopore sequencing will ultimately fulfill the gold standards. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    The evolution of nanopore sequencing
  11. 2631
    “…The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Rebar Graphene from Functionalized Boron Nitride Nanotubes
  12. 2632
    por Zhu, Y., Appenzeller, J.
    Publicado 2015
    “…Our findings from analytical expressions derived in this article reveal that under certain conditions an array of 1D channels can outperform a 2D field-effect transistor because of the added degree of freedom to adjust the threshold voltage in an array of 1D devices. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    On the Current Drive Capability of Low Dimensional Semiconductors: 1D versus 2D
  13. 2633
    “…Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    A Low Noise Amplifier for Neural Spike Recording Interfaces
  14. 2634
    “…Controlling the regioregularity among the structural units of narrow bandgap conjugated polymer backbones has led to improvements in optoelectronic properties, for example in the mobilities observed in field effect transistor devices. To investigate how the regioregularity affects quantities relevant to hole transport, regioregular and regiorandom oligomers representative of polymeric structures were studied using density functional theory. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Charge delocalization characteristics of regioregular high mobility polymers
  15. 2635
    por Xu, Luting, Li, Xin-Qi, Sun, Qing-feng
    Publicado 2014
    “…We revisit the spin-injected field effect transistor (spin-FET) in a framework of the lattice model by applying the recursive lattice Green's function approach. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects
  16. 2636
    por Chu, Dongil, Lee, Young Hee, Kim, Eun Kyu
    Publicado 2017
    “…The challenge of realizing an innovative transistor geometry that exploits this concern remains. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Selective control of electron and hole tunneling in 2D assembly
  17. 2637
    “…In this study, indium-tin-oxide (ITO) nanoparticles were simply recovered from the thin film transistor-liquid crystal display (TFT-LCD) panel scraps by means of lift-off method. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Characteristics of Indium Tin Oxide (ITO) Nanoparticles Recovered by Lift-off Method from TFT-LCD Panel Scraps
  18. 2638
    “…This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO(2)) as a gate dielectric. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO(2) as a Gate Dielectric
  19. 2639
    por Lin, Tingyou, Ho, Yingchieh, Su, Chauchin
    Publicado 2017
    “…The modulated PWM pulses control the hottest of metal-oxide-semiconductor field-effect transistor (MOSFET) bank to reduce its power dissipation and heat generation. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power ICs
  20. 2640
    “…We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
Herramientas de búsqueda: RSS