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  1. 2741
    “…SiO(2) nanostructures directly fabricated can serve as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate, or other dielectric materials to form electrically functional nanostructures and devices. …”
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    A Novel Nanofabrication Technique of Silicon-Based Nanostructures
  2. 2742
    por Kawahito, Shoji, Seo, Min-Woong
    Publicado 2016
    “…This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). …”
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    Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors
  3. 2743
    por Shalev, Gil
    Publicado 2017
    “…The electrostatically formed nanowire (EFN) gas sensor is based on a multiple-gate field-effect transistor with a conducting nanowire, which is not defined physically; rather, the nanowire is defined electrostatically post-fabrication, by using appropriate biasing of the different surrounding gates. …”
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    The Electrostatically Formed Nanowire: A Novel Platform for Gas-Sensing Applications
  4. 2744
    por Iguchi, Y., Nii, Y., Onose, Y.
    Publicado 2017
    “…For example, conductance can be controlled by a gate electric field in a field effect transistor, which is a main component of integrated circuits. …”
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    Magnetoelectrical control of nonreciprocal microwave response in a multiferroic helimagnet
  5. 2745
    “…These results suggest that evolving transistor-miniaturization technology can increase the demon's power output.…”
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    Power generator driven by Maxwell's demon
  6. 2746
    por Ando, Takashi
    Publicado 2012
    “…La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm), but with effective workfunction (EWF) values suitable only for n-type field-effect-transistor (FET). Further exploration for p-type FET-compatible higher-κ materials is needed. …”
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    Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?
  7. 2747
    “…We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.…”
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    Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy
  8. 2748
    “…The ability of the sensor to detect ATP was investigated by fabricating a field-effect transistor on the modified NCD surface.…”
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    Aptamer-Based Carboxyl-Terminated Nanocrystalline Diamond Sensing Arrays for Adenosine Triphosphate Detection
  9. 2749
    “…In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. …”
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    Transparent Fingerprint Sensor System for Large Flat Panel Display
  10. 2750
    “…This mouthwitch uses a sensor equipped with an LED and photo transistor on the temple to optically measure the changes in the form of the temple that occur when the mouth is opened and closed. …”
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    Mouthwitch: A Novel Head Mount Type Hands-Free Input Device that Uses the Movement of the Temple to Control a Camera
  11. 2751
    “…Finally, piezoelectric-based organic field effect transistor (OFET) electromechanical transduction exhibiting a record sensitivity of over 600 was integrated into polymer cantilevers and used as highly sensitive strain and humidity sensors. …”
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    Integrated Electromechanical Transduction Schemes for Polymer MEMS Sensors
  12. 2752
    “…We show that these hybrid sensors have perfectly aligned nanopores and field-effect transistor components making it possible to detect molecular events with up to near 100% synchronization. …”
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    Gated Single-Molecule Transport in Double-Barreled Nanopores
  13. 2753
    “…Moreover, the device displays a typical transistor characteristic with a rapid response time of 18 ms at under 532 nm irradiation. …”
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    A Broadband Phototransistor Based on Three-Dimensional Reduced Graphene Oxide Foam
  14. 2754
    “…In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. …”
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    3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance
  15. 2755
    “…In total, we have generated 7200 transistor samples and performed approximately 10,000 quantum transport simulations. …”
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    Variability Predictions for the Next Technology Generations of n-type Si(x)Ge(1−x) Nanowire MOSFETs
  16. 2756
    “…We report the amorphous Si passivation of Ge pMOSFETs fabricated on (001)-, (011)-, and (111)-orientated surfaces for advanced CMOS and thin film transistor applications. Amorphous Si passivation of Ge is carried out by magnetron sputtering at room temperature. …”
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    High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
  17. 2757
    “…Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, employ truly three-dimensional architectures. …”
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    Process Variability—Technological Challenge and Design Issue for Nanoscale Devices
  18. 2758
    “…In this paper, we discuss the potential use of four transistor active pixel sensor (4T-APS) as a video monitor at a nuclear accident site with a high level of γ radiation. …”
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    Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation
  19. 2759
    por Choi, Hojong
    Publicado 2019
    “…Transistor linearizer networks are proposed to increase the transmitted output voltage amplitudes of class-C amplifiers, thus, increasing the sensitivity of the echo signals of piezoelectric transducers, which are the main components in portable ultrasound instruments. …”
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    Class-C Linearized Amplifier for Portable Ultrasound Instruments
  20. 2760
    “…We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. …”
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    Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
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