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2761“…The characteristics of the plasmon detection are expressed by using small-signal analysis of the single transistor at the sub-threshold operation. The results of the small-signal analysis show that the unity gain preamplifier located between the detector core and the main amplifier can improve the detection performances such as the voltage responsivity and the noise equivalent power. …”
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2762“…In this paper, an Organic Charge Modulated Field Effect Transistor-based device is proposed as a promising tool for neuro-pharmacological applications, thanks to its ultra-high pH sensitivity and a simple fabrication technology. …”
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2763“…We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta(2)O(5)-SiO(2)-Si. …”
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2764por Strunk, Karl-Philipp, Abdulkarim, Ali, Beck, Sebastian, Marszalek, Tomasz, Bernhardt, Jakob, Koser, Silke, Pisula, Wojciech, Jänsch, Daniel, Freudenberg, Jan, Pucci, Annemarie, Bunz, Uwe H. F., Melzer, Christian, Müllen, Klaus“…The semiconducting behavior of PPP was further unambiguously proven through IR and transistor measurements of molybdenum trioxide p-doped films.…”
Publicado 2019
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2765por Jia, Hujun, Tong, Yibo, Li, Tao, Zhu, Shunwei, Liang, Yuan, Wang, Xingyu, Zeng, Tonghui, Yang, Yintang“…An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. …”
Publicado 2019
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2766“…In this work, we report an on-chip aptasensor for ochratoxin A (OTA) toxin detection that is based on a graphene field-effect transistor (GFET). Graphene-based devices are fabricated via large-scale technology, allowing for upscaling the sensor fabrication and lowering the device cost. …”
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2767por Parmeggiani, Matteo, Verna, Alessio, Ballesio, Alberto, Cocuzza, Matteo, Piatti, Erik, Fra, Vittorio, Pirri, Candido Fabrizio, Marasso, Simone Luigi“…In this study, we investigate the effect of the solvent and of the substrate modification on thin films of organic semiconductor Poly(3-hexylthiophene) (P3HT) in order to improve the stability and electrical properties of an Electrolyte Gated Organic Field Effect Transistor (EGOFET) biosensor. The studied surface is the relevant interface between the P3HT and the electrolyte acting as gate dielectric for in-liquid detection of an analyte. …”
Publicado 2019
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2768por Jang, Won Douk, Yoon, Young Jun, Cho, Min Su, Jung, Jun Hyeok, Lee, Sang Ho, Jang, Jaewon, Bae, Jin-Hyuk, Kang, In Man“…In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. …”
Publicado 2019
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2769“…The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO(2) gate insulator was investigated. …”
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2770“…Ultra-fast electrical switches activated with an optical-polarized light trigger, also called photo-polarized activated electrical switches, are presented. A set of new transistor circuits is switched by light from above, illuminating deep V-grooves, whose angle is sensitive to the polarization of the incident. …”
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2771“…As aptamers are extremely versatile in terms of their utilization in different detection principles, a broad range of techniques are covered including electrochemical, optical, colorimetric, and gravimetric sensing as well as surface acoustics waves and transistor-based detection.…”
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2772“…In contrast to the conventional DC (direct current) scheme, AC polarization breaks the trade-off between input transistor gate size and white noise floor of TIA, a relative low input loading capacitance can be implemented for low noise consideration. …”
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2773por Stefanov, Konstantin D., Prest, Martin J., Downing, Mark, George, Elizabeth, Bezawada, Naidu, Holland, Andrew D.“…Using simulations, the noise performance of the pixel was determined as a function of the number of samples, sense node capacitance, sampling rate and transistor characteristics. The strengths and limitations of the proposed design are discussed in detail, including the trade-off between noise performance and readout rate and the impact of charge transfer inefficiency (CTI). …”
Publicado 2020
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2774por Shlenkevitch, Dima, Stolyarova, Sara, Blank, Tanya, Brouk, Igor, Nemirovsky, Yael“…This paper presents a miniature combustion-type gas sensor (GMOS) based on a thermal sensor, where a micromachined CMOS–SOI transistor integrated with a catalytic reaction plate acts as a sensing element. …”
Publicado 2020
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2775por Shin, Gunchul“…In this study, a field-effect transistor (FET) device was fabricated on a soft polymer substrate with SnO(2) nanowires (NWs), whose electrical properties change in response to water molecules. …”
Publicado 2020
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2776por Calò, Pietro Antonio Paolo, Petrignani, Savino, Di Gioia, Michele, Marzocca, Cristoforo“…The results provided by the model have been successfully compared with experimental measurements from a front-end circuit with variable configuration based on a bipolar junction transistor (BJT), coupled to a 3 × 3 mm(2) SiPM stimulated by a fast-pulsed laser source.…”
Publicado 2020
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2777“…We designed, implemented, and characterized differential amplifiers for cryogenic temperatures based on Si bipolar junction transistor technology. The amplifiers show high gain values of more than 60 dB at 300, 77, and 48 K. …”
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2778por Liu, Yuanda, Dini, Kévin, Tan, Qinghai, Liew, Timothy, Novoselov, Kostya S., Gao, Weibo“…Here, we demonstrate excitonic transistor and router based on bilayer WSe(2). Because of their strong dipole moment, excitons in bilayer WSe(2) can be controlled by transverse electric field. …”
Publicado 2020
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2779“…The junctionless field-effect transistor (JLFET) compact model using the model parameters extracted from the LETI-UTSOI (version 2.1) model was proposed to perform circuit simulation considering the electrical coupling between the stacked JLFETs of a monolithic 3D integrated circuit (M3DIC) composed of JLFETs (M3DIC-JLFET). …”
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2780por Miura, Reo, Sekine, Tomohito, Wang, Yi-Fei, Hong, Jinseo, Watanabe, Yushi, Ito, Keita, Shouji, Yoshinori, Takeda, Yasunori, Kumaki, Daisuke, Santos, Fabrice Domingues Dos, Miyabo, Atsushi, Tokito, Shizuo“…An amplifier circuit, based on a printed organic thin-film transistor, was applied and achieved a high sensitivity of 0.1 cm(2)/V·s. …”
Publicado 2020
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