Mostrando 2,781 - 2,800 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.21s Limitar resultados
  1. 2781
    “…Here, we report the use of an in vivo OECT (organic electrochemical transistor) sensor, termed as bioristor, in the context of the drought response of the tomato plant. …”
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  2. 2782
    “…The increased performance is achieved with a switching circuit that allows to generate a short high-AC voltage on the ultrasonic array, by using an LC tank and a bipolar junction transistor, starting with a low-DC voltage, making it CMOS-compatible. …”
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  3. 2783
    “…In this work, we have designed and simulated a graphene field effect transistor (GFET) with the purpose of developing a sensitive biosensor for methanethiol, a biomarker for bacterial infections. …”
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  4. 2784
    “…For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. …”
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  5. 2785
    “…This paper explores the advantages and disadvantages of radiometric techniques and presents an overview of a radiometric PD detection technique that uses a transistor reset integrator (TRI)-based wireless sensor network (WSN).…”
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  6. 2786
    “…Here, optoelectronic synaptic transistors based on tris(2-phenylpyridine) iridium (Ir(ppy)(3)) and poly(3,3-didodecylquarterthiophene) (PQT-12) heterojunction structure are presented. …”
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  7. 2787
    “…In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. …”
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  8. 2788
    “…The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.…”
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  9. 2789
    “…We demonstrate that this new type of 2D non-covalent porous organic framework can be used as the active layer in a field effect transistor device with graphene source and drain contacts along with hexagonal boron nitride as the gate dielectric interface.…”
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  10. 2790
    “…Using spectro-electrochemistry and electrochemical transistor measurements, we demonstrate here that CsPbBr(3) nanocrystals can be successfully and reversibly p-doped via electrochemical hole injection. …”
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  11. 2791
    “…In order to realize image information security starting from the data source, challenge–response (CR) device authentication, based on a Physically Unclonable Function (PUF) with a 2 Mpixel CMOS image sensor (CIS), is studied, in which variation of the transistor in the pixel array is utilized. As each CR pair can be used only once to make the CIS PUF resistant to the modeling attack, CR authentication with CIS can be carried out 4050 times, with basic post-processing to generate the PUF ID. …”
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  12. 2792
    “…In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). …”
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  13. 2793
    “…The review wok of authors present a concise information and brief discussion on the development made in the progress of potentiometric, field effect transistor, graphene, electrochemical, optical, polymeric, nanoparticles and nanocomposites based urea biosensors in the past two decades. …”
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  14. 2794
    “…In addition, field effect transistor devices based on the 2D Te nanoflakes were fabricated and exhibited excellent electrical properties with high mobility of 379 cm(2) V(−1) s(−1).…”
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  15. 2795
    “…Overall, the domain mimics the two-dimensional electron gas (2DEG) channel of a typical GaN high electron mobility transistor (HEMT). High energy electrons entering the domain from the source interact with the phonons, and drift under the influence of an external electric field. …”
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  16. 2796
    “…When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. …”
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  17. 2797
    “…The collector currents of bipolar junction transistor (BJT) pairs with different ratios and temperature characteristics can cause greater nonlinearities in ΔV(EB). …”
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  18. 2798
    por Naumova, Olga V., Zaytseva, Elza G.
    Publicado 2022
    “…Silicon-on-insulator (SOI) nanowire or nanoribbon field-effect transistor (FET) biosensors are versatile platforms of electronic detectors for the real-time, label-free, and highly sensitive detection of a wide range of bioparticles. …”
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  19. 2799
    “…In a hydrogenated Zn(0.8)Co(0.2)O (ZnCoO:H) film with an inverted thin-film transistor structure, we found ambipolar behavior, which is shown in many field-effect devices based on graphene, graphene nanoribbons, and organic semiconductors. …”
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  20. 2800
    “…Solution-processed zirconium oxide (ZrO(2)) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature, and are suitable for flexible thin film transistor (TFT) devices. Precursor solutions with equimolar zirconium halide and zirconium alkoxide were prepared, and amorphous ZrO(2) films were obtained by spin-coating and annealing at 300 °C through the direct condensation reaction between them. …”
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