Materias dentro de su búsqueda.
Materias dentro de su búsqueda.
Circuitos de transistores
28
Transistores
21
Semiconductores
14
Electrónica
8
Circuitos integrados
7
Transistores de efecto de campo
7
Circuitos electrónicos
6
Diseño y construcción
4
Electrónica digital
4
Transistores de unión
4
Amplificadores de transistores
3
Diodos semiconductores
3
Ingeniería
3
Transistores bipolares
3
Circuitos electronicos
2
Circuitos eléctricos
2
Circuitos integrados lineales
2
Diodos
2
Diseño de circuitos electrónicos
2
Historia
2
Semiconductores de metal-óxido complementarios
2
Ciencia
1
Circuitos impresos
1
Circuitos integrados digitales
1
Circuitos lógicos
1
Circuitos lógicos Transistor-transistor
1
Circuitos transistorizados
1
Comunicación intercultural
1
Comunicación y cultura
1
Comunidades indígenas y medios de comunicación de masas
1
-
2781por Janni, Michela, Coppede, Nicola, Bettelli, Manuele, Briglia, Nunzio, Petrozza, Angelo, Summerer, Stephan, Vurro, Filippo, Danzi, Donatella, Cellini, Francesco, Marmiroli, Nelson, Pignone, Domenico, Iannotta, Salvatore, Zappettini, Andrea“…Here, we report the use of an in vivo OECT (organic electrochemical transistor) sensor, termed as bioristor, in the context of the drought response of the tomato plant. …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2782“…The increased performance is achieved with a switching circuit that allows to generate a short high-AC voltage on the ultrasonic array, by using an LC tank and a bipolar junction transistor, starting with a low-DC voltage, making it CMOS-compatible. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2783“…In this work, we have designed and simulated a graphene field effect transistor (GFET) with the purpose of developing a sensitive biosensor for methanethiol, a biomarker for bacterial infections. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2784por Altet, Josep, Barajas, Enrique, Mateo, Diego, Billong, Alexandre, Aragones, Xavier, Perpiñà, Xavier, Reverter, Ferran“…For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. …”
Publicado 2021
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2785por Upton, David W., Mistry, Keyur K., Mather, Peter J., Zaharis, Zaharias D., Atkinson, Robert C., Tachtatzis, Christos, Lazaridis, Pavlos I.“…This paper explores the advantages and disadvantages of radiometric techniques and presents an overview of a radiometric PD detection technique that uses a transistor reset integrator (TRI)-based wireless sensor network (WSN).…”
Publicado 2021
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2786por Zhang, Junyao, Lu, Yang, Dai, Shilei, Wang, Ruizhi, Hao, Dandan, Zhang, Shiqi, Xiong, Lize, Huang, Jia“…Here, optoelectronic synaptic transistors based on tris(2-phenylpyridine) iridium (Ir(ppy)(3)) and poly(3,3-didodecylquarterthiophene) (PQT-12) heterojunction structure are presented. …”
Publicado 2021
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2787Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode“…In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2788“…The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.…”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2789por Xu, Qizhi, Zhang, Boyuan, Zeng, Yihang, Zangiabadi, Amirali, Ni, Hongwei, Chen, Rongsheng, Ng, Fay, Steigerwald, Michael L., Nuckolls, Colin“…We demonstrate that this new type of 2D non-covalent porous organic framework can be used as the active layer in a field effect transistor device with graphene source and drain contacts along with hexagonal boron nitride as the gate dielectric interface.…”
Publicado 2021
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2790por Mulder, Jence T., du Fossé, Indy, Alimoradi Jazi, Maryam, Manna, Liberato, Houtepen, Arjan J.“…Using spectro-electrochemistry and electrochemical transistor measurements, we demonstrate here that CsPbBr(3) nanocrystals can be successfully and reversibly p-doped via electrochemical hole injection. …”
Publicado 2021
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2791por Okura, Shunsuke, Aoki, Masanori, Oyama, Tatsuya, Shirahata, Masayoshi, Fujino, Takeshi, Ishikawa, Kenichiro, Takayanagi, Isao“…In order to realize image information security starting from the data source, challenge–response (CR) device authentication, based on a Physically Unclonable Function (PUF) with a 2 Mpixel CMOS image sensor (CIS), is studied, in which variation of the transistor in the pixel array is utilized. As each CR pair can be used only once to make the CIS PUF resistant to the modeling attack, CR authentication with CIS can be carried out 4050 times, with basic post-processing to generate the PUF ID. …”
Publicado 2021
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2792por Huang, Chong-Rong, Chiu, Hsien-Chin, Liu, Chia-Hao, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Chen, Chih-Tien, Chang, Kuo-Jen“…In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). …”
Publicado 2021
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2793“…The review wok of authors present a concise information and brief discussion on the development made in the progress of potentiometric, field effect transistor, graphene, electrochemical, optical, polymeric, nanoparticles and nanocomposites based urea biosensors in the past two decades. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2794por Zhao, Xinxin, Shi, Jianwei, Yin, Qin, Dong, Zhuo, Zhang, Yan, Kang, Lixing, Yu, Qiang, Chen, Cheng, Li, Jie, Liu, Xinfeng, Zhang, Kai“…In addition, field effect transistor devices based on the 2D Te nanoflakes were fabricated and exhibited excellent electrical properties with high mobility of 379 cm(2) V(−1) s(−1).…”
Publicado 2021
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2795“…Overall, the domain mimics the two-dimensional electron gas (2DEG) channel of a typical GaN high electron mobility transistor (HEMT). High energy electrons entering the domain from the source interact with the phonons, and drift under the influence of an external electric field. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2796“…When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2797“…The collector currents of bipolar junction transistor (BJT) pairs with different ratios and temperature characteristics can cause greater nonlinearities in ΔV(EB). …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2798“…Silicon-on-insulator (SOI) nanowire or nanoribbon field-effect transistor (FET) biosensors are versatile platforms of electronic detectors for the real-time, label-free, and highly sensitive detection of a wide range of bioparticles. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2799“…In a hydrogenated Zn(0.8)Co(0.2)O (ZnCoO:H) film with an inverted thin-film transistor structure, we found ambipolar behavior, which is shown in many field-effect devices based on graphene, graphene nanoribbons, and organic semiconductors. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
2800“…Solution-processed zirconium oxide (ZrO(2)) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature, and are suitable for flexible thin film transistor (TFT) devices. Precursor solutions with equimolar zirconium halide and zirconium alkoxide were prepared, and amorphous ZrO(2) films were obtained by spin-coating and annealing at 300 °C through the direct condensation reaction between them. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto