“…The main feature of this design is the use of a transistor in the feedback path instead of a resistor. …”
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“…An organic blended thin-film transistor (TFT) fabricated from the blend of an organic semiconductor and an insulating polymer demonstrated improved electrical properties in the dark and a higher current under light irradiation even though its transmittance was higher. …”
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“…The multi-DC driving waveform for gray scale consistency was applied to a thin film transistor-electrowetting display (TFT-EWD). The average difference between increasing driving voltage and decreasing driving voltage was only 2.79%. …”
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“…Electrochemical sensors employing carbon screen-printed electrodes (SPEs), including a wearable glove-based one, and aptamer-based devices, including a miniaturized aptamer-based graphene field effect transistor platform, are some exciting examples. Quite straightforward electrochemical sensing systems and methods for controlled substances have been developed using commercially available carbon SPEs and commercially available miniaturized potentiostats. …”
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“…Co-integrated III–V vertical gate-all-around MOSFET selectors in a one-transistor-one-resistor (1T1R) configuration have recently been demonstrated where an interlayer (IL)-oxide has been shown to enable high RRAM endurance needed for applications like machine learning. …”
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“…As a result, several improvements have been proposed in terms of epitaxy structure and high electron mobility transistor (HEMT) process, particularly in the enhancement mode (E-mode). …”
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“…The inversion channel mobility of a metal-oxide-semiconductor field effect transistor (MOSFET) was decreased via a high interface state density and the coulomb-scattering mechanisms of the carriers. …”
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“…Several studies have focused on rapid and accurate detection of dopamine levels using field-effect transistor (FET)-based sensors. However, conventional approaches have poor dopamine sensitivity with values <11 mV/log [DA]. …”
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“…A novel Performance Optimized Carrier Stored Trench Gate Bipolar Transistor (CSTBT) with Low Switching Loss has been proposed. …”
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“…The MFS is a magnetic transistor type. The performance of the MFS was analyzed employing the semiconductor simulation software, Sentaurus TCAD. …”
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“…Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. …”
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“…In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD) simulation. …”
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“…In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole pairs along the incident track, and then the generated transient current can overturn the logical state of the device when the number of electron-hole pairs is large enough. …”
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“…In this study, a 3D model of IGBT (Insulated Gate Bipolar Transistor) packaging was built by DesignModeler. Based on ANSYS Workbench, the influence of void size, location, solder layer type, and thickness on the temperature distribution of the IGBT module was simulated. …”
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“…One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation due to transistor aging. To extend circuit operating life, the bias of the main devices within the circuit must be adjusted while the aging degradation process affects them by using a monitor circuit that tracks the evolution of the circuit performance. …”
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“…This would allow avoiding the use of transistor control circuits which are already power-consuming. …”
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“…In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. …”
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“…Our findings also reveal transition of the type-II band alignment in a type-III configuration via compressive strain for tunneling field-effect transistor application. Furthermore, both types of vdWHs exhibit enhanced suitability for photocatalysis under conditions with a pH of 2.…”
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“…Our method involves phase-synchronized switching of a field effect transistor to mediate the Coulombic force between the probe and the sample. …”
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“…We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO3, using water-infiltrated nanoporous glass—amorphous 12CaO·7Al(2)O(3)—as the gate insulator. …”
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