“…A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe size. …”
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“…This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor.…”
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“…Elementary phononic devices such as diode, transistor and logic devices have been theoretically proposed. …”
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“…Thus, the simple and low-cost fabrication method along with excellent device characteristics makes the proposed GAA NW transistor a promising candidate for future 3-D electronics and system-on-panel applications.…”
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“…In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal–semiconductor field-effect transistor (MESFET) device structure was exploited. …”
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“…Our new experimental results provide important information regarding GaPSb which may well lay the foundation for possible GaPSb-based device applications such as in high-electron-mobility transistor and heterojunction bipolar transistors.…”
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“…This concept allows for better matching with the junction gate field-effect transistor (JFET) readout, suppresses charging noise related to the Coulomb blockade due to the small area of tunnel junctions and decreases the volume of a normal absorber for further improvement of the noise performance. …”
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“…In one SD-OCT, a Complementary Metal-Oxide-Semiconductor Transistor (CMOS) camera and an alternating reference arm was used to image the anterior segment from the cornea to the lens. …”
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“…Paraelectrical tuning of a charge carrier density as high as 10(13) cm(−2) in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. …”
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“…There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel's conductance individually. …”
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“…The three contacts (two on top and one on the bottom), which resemble the classical bipolar or field effect transistor arrangements are, in principle, interchangeable when the overall electrical resistance along the tracks and on the surface are similar. …”
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“…The high-performance rectifying behaviors similar to macroscopic p-n junction diodes, such as a nearly linear positive-bias I-V curve (metallic behavior), a very small leakage current under negative bias (insulating behavior), a rather low threshold voltage, and a large bias region contributed to a rectification, can be predicted. And also, a transistor can be built by such a hybrid structure, which can show an extremely high current amplification. …”
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“…The technique opens a new route to Mott-insulator based transistors and to discovering singularities hitherto unnoticed in conventional bulk studies of strongly correlated electron systems.…”
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“…We implemented spatial mapping of charge carrier density in the channel of a conventional polymer Field-Effect Transistor (FET) by mid-infrared Charge Modulation Spectroscopy (CMS). …”
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“…In this research, a model for a Field Effect Transistor (FET)-based structure has been developed as a platform for a gas detection sensor in which the CNT conductance change resulting from the chemical reaction between NH(3) and CNT has been employed to model the sensing mechanism with proposed sensing parameters. …”
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“…In this work, we use an experimentally calibrated 3D quantum mechanically corrected device simulation to study the random dopant fluctuation (RDF) on DC characteristics of 16-nm-gate trapezoidal bulk fin-type field effect transistor (FinFET) devices. The fixed top-fin width, which is consistent with the realistic process by lithography, of trapezoidal bulk FinFET devices is considered in this study. …”
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“…Organic field effect transistor (OFET) devices fabricated from 1 and 2 demonstrated that the substitution of thiophene units for thiazoles was found to increase the observed charge transport, which is attributed to induced planarity through S–N interactions of adjacent thiazole nitrogen atoms and TTF sulfur atoms and better packing in the bulk.…”
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“…Here, we demonstrate the design and realization of a tunable and localized electrical source of excitons coupled to surface plasmons based on a polymer light-emitting field-effect transistor (LEFET). Gold nanorods that are integrated into the channel support localized surface plasmons and serve as nanoantennas for enhanced electroluminescence. …”
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“…Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. …”
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“…The proposed device was found to have better sensing performance than potentiometric-, cascoded compatible lateral bipolar transistor (C-CLBT)-, Electronic Tongue (SA402)-, and fiber-optic-based taste sensing systems in what concerns dynamic range width, response time, sensitivity, and linearity. …”
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