“…Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equipped with an analogue capacitor to accumulate or count avalanche pulses. …”
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“…The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. …”
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“…Vertical and lateral oxygen mobility may be finely modulated, at the micro- and nano-scale, by tuning the applied bias voltage and operating temperature thus providing the basis for the design of homogeneous and flexible transistor-like devices with loss-less superconducting drain–source channels. …”
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“…This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO(2) interfaces (top and bottom) should modulate the low-frequency fluctuation characteristics of both devices. …”
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“…A thorough characterization of the metal oxide semiconductor field effect transistor measurement system was performed prior to the measurements in phantoms and patients. …”
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“…The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V(h)). …”
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“…Finally, applications of the Ag NPs based ink in transparent conductive film (TCF), thin film transistor (TFT), biosensor, radio frequency identification (RFID) antenna, stretchable electronics and their perspectives on flexible and printed electronics are presented.…”
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“…In this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cross-sections on a 10 nm gate gate-all-around (GAA) nanowire (NW) metal–oxide–semiconductor field-effect transistor (MOSFET) device. The associated timing and power fluctuations of the GAA NW complementary metal–oxide–semiconductor (CMOS) circuits are further estimated and analyzed simultaneously. …”
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“…In article number 1802115, Kwan Hyi Lee, Seung‐Jae Myung, and co‐workers successfully develop an electric field effect colorectal sensor (E‐FECS) equipped with a thin film transistor‐chipset, a disposable multiwell gate, and an integrated measurement box to detect colon cancer secreted protein‐2 (CCSP‐2) in blood samples from human colorectal cancer (CRC) patients. …”
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“…Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). …”
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“…Two minimum-sized Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and two magnetic tunnel junction (MTJ) devices are added on top of a conventional D flip-flop for temporary storage during the power-down. …”
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“…A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. …”
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“…By achieving near-ideal power transistor switching and leveraging the characteristics of conventional diodes to prevent reverse current, the proposed approach greatly improves the performance of the energy harvester in power conversion. …”
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“…We show that we can design acid-labile semiconducting polymers to appropriately phase segregate within a biodegradable elastomer, yielding semiconducting nanofibers that concurrently enable controlled transience and strain-independent transistor mobilities. Along with the future development of suitable conductors and device integration advances, we anticipate that these materials could be used to build fully biodegradable diagnostic or therapeutic devices that reside inside the body temporarily, or environmental monitors that are placed in the field and break down when they are no longer needed. …”
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“…The gray-scale display which is driven by PWM (pulse width modulation) in TFT (thin film transistor) electrowetting displays (EWDs) has some shortcomings, such as large amplitude of oil oscillation in pixels and slow response speed for displaying gray scale. …”
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“…Also, significant ferroelectric-assisted modulation in electrical properties has been achieved from field-effect transistor devices based on the 2D/3D heterostructrues. …”
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“…This synergy is demonstrated on a silicon‐nanoribbon field‐effect transistor (SiNR‐FET) by functionalizing the sensor surface with properly designed chromophore molecules. …”
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“…Also, the proposed radiation-hardened SAR ADC with delay-based dual feedback flip-flops was designed and verified by utilizing compact transistor models, which reflect radiation effects to CMOS parameters, and radiation simulator computer aided design (CAD) tools.…”
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“…This, in turn, gives a design methodology to control precisely generated charges and enables one to use SPADs as conventional photodiodes (PDs) in a four transistor pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) with short exposure time and without carrier overflow. …”
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“…Moreover, the effect of the nanoscale morphology of an APB on electron transport from two‐probe field effect transistor measurements is investigated. A saw‐toothed APB has a considerably lower electron mobility than a linear APB, indicating that kinks between facets are the main factors of scattering. …”
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