“…In this paper, input and out pulse width modulation (PWM) was used to command the metal–oxide–semiconductor field-effect transistor (MOSFET) controller which supplied voltage to the motor. …”
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“…The AlGaN/GaN high electron mobility transistor with a step–doped channel (SDC–HEMT) is first proposed in this paper. …”
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“…We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.…”
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“…In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. …”
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“…In addition, P(R(F)Mi-St) could be solution-processed with chemically non-damaging fluorous liquids, which enabled the polymer to be applied effectively on top of an organic semiconductor layer as a dielectric material (dielectric constant 2.7) for the organic field-effect transistor fabrication.…”
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“…The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. …”
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“…The first flexible organic‐heterojunction neuromorphic transistor (OHNT) that senses broadband light, including near‐ultraviolet (NUV), visible (vis), and near‐infrared (NIR), and processes multiplexed‐neurotransmission signals is demonstrated. …”
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“…In this paper, analytical modeling of a Dielectric Modulated Double Gate Field Effect Transistor (DM-DGFET) for biosensing application is presented with extensive data analysis. …”
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“…Secondly, according to the switch types, the existing power management methods are summarized and divided into four categories: travel switch, voltage trigger switch, transistor switch of discrete components and integrated circuit switch. …”
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“…In this article, an AlGaN and Si(3)N(4) compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. …”
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“…The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). …”
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“…This study records the label-free electrical detection of the SARS-CoV-2 virus using the gate-all-around junctionless field effect transistor (GAA-JLFET) that detects the virus because of the electrical properties (dielectric constant and charge) of spike protein, envelope protein, and virus DNA, for a highly sensitive and real-time bio-sensor. …”
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“…This paper presents a register-transistor level (RTL) based convolutional neural network (CNN) for biosensor applications. …”
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“…In this review, various types of biosensors, which include electrochemical, fluorescent, plasmonic, photoelectrochemical, and field-effect transistor (FET)-based sensor configurations, with better clinical applicability and analytical performance towards AD are highlighted. …”
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“…For enzyme-/antibody-free and label-free biosensing, a molecularly imprinted polymer (MIP)-based membrane with phenylboronic acid (PBA) molecules, which induces the change in the density of molecular charges based on the small biomolecule–PBA diol binding, has been demonstrated to be suitable for the bioelectrical interface of biologically coupled gate field-effect transistor (bio-FET) sensors. MIP-coated gate FET sensors selectively detect various small biomolecules such as glucose, dopamine, sialic acid, and oligosaccharides without using labeled materials. …”
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“…Further, a planar photodetector was fabricated (Ag–ZnO–Ag planar configuration) and it was observed that the dark current value got reduced by more than ten times with Cr coating, thereby opening up its potential for transistor applications. Finally, Cr coated ZnO nanorods were employed for green light sensing. …”
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“…Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb(2)Se(9) flakes and verified that it has p-type semiconductor characteristics. …”
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“…In this study, a gated carbon nanotube cold cathode electron gun with high current stability was developed by using Insulated Gate Bipolar Transistor (IGBT) modulation, and its application in X-ray source was explored. …”
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“…Based on their intrinsic electrical properties, we show cable bacteria filaments to have great potential as for instance interconnects and transistor channels in a new generation of bioelectronics. …”
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“…The pressure sensor was fabricated to work under low voltage conditions by using a high mobility amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) and a stretched polyvinylidene fluoride (PVDF) film. …”
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