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  1. 2941
    “…The NC technique is applied by subtracting the input transistor’s noise contribution to the output and achieves a noise figure (NF) reduction from 4.8 dB to 3.2 dB. …”
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    Miniature Wide-Band Noise-Canceling CMOS LNA †
  2. 2942
    “…In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are tested at different temperatures. …”
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    Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA
  3. 2943
    “…This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.…”
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    Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation
  4. 2944
    por Li, Yuan, Xu, Liang, Guo, Zhiyou, Sun, Huiqing
    Publicado 2022
    “…In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS. …”
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    Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure
  5. 2945
    por Lee, Geun Jae, Yu, Yun Seop
    Publicado 2022
    “…The effect of the work-function variation (WFV) of metal-oxide-semiconductor field-effect transistor (MOSFET) gates on a monolithic 3D inverter (M3DINV) structure is investigated in the current paper. …”
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    An Investigation of the Effect of the Work-Function Variation of a Monolithic 3D Inverter Stacked with MOSFETs
  6. 2946
    “…In this paper, an In(0.53)Ga(0.47)As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N(+)-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. …”
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    OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N(+)-Pocket
  7. 2947
    “…Herein, we propose a novel approach to field-effect transistors for the fast and facile screening of lead vanilloid compounds for the development of TRPV1-targeting medications. …”
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    Highly Efficient Real-Time TRPV1 Screening Methodology for Effective Drug Candidates
  8. 2948
    “…We have demonstrated the method of threshold voltage (V(T)) adjustment by controlling Ge content in the SiGe p-channel of N1 complementary field-effect transistor (CFET) for conquering the work function metal (WFM) filling issue on highly scaled MOSFET. …”
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    Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)
  9. 2949
    “…These undesirable phenomena have been eliminated by adding an active element to the charger topology and a new transistor control strategy. This new switching control strategy of transistors has been patented.…”
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    Innovative Bidirectional Isolated High-Power Density On-Board Charge for Vehicle-to-Grid
  10. 2950
    “…In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. …”
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    Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods
  11. 2951
    por Yang, Fan, Song, Leijun, Xu, Yuehang
    Publicado 2022
    “…In order to meet the application requirements of radar networks for high efficiency and high second harmonic suppression (SHS) of power amplifiers, this paper proposes a C-band 30 W power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on 0.25 μm gallium nitride (GaN) high electron mobility transistor (HEMT) process. The proposed PA uses a two-stage amplifier structure to achieve high power gain. …”
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    C-Band 30 W High PAE Power Amplifier MMIC with Second Harmonic Suppression for Radar Network Application
  12. 2952
    “…By exploiting this reciprocal behavior, we can use two FM/3DTI heterostructures to design an integrated 1-transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. …”
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    Low Power In-Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures
  13. 2953
    “…The proposed memristor emulator is designed using a single differential voltage current conveyor (DVCC), three PMOS transistors, and one capacitor. Among three PMOS transistors, two transistors are used to implement an active resistor, and one transistor is used as the multiplier required for the necessary memristive behaviors. …”
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    Electronically Tunable Memristor Emulator Implemented Using a Single Active Element and Its Application in Adaptive Learning
  14. 2954
    “…In this work, we investigate, through ab initio atomistic calculations, a pyrrole-based Molecular Field Effect Transistor (MolFET) as a single-molecule sensor for the amperometric detection of aflatoxins. …”
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    Design of Pyrrole-Based Gate-Controlled Molecular Junctions Optimized for Single-Molecule Aflatoxin B1 Detection
  15. 2955
    “…This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. …”
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    A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction
  16. 2956
    “…Recently, CNT field-effect transistor-type biosensors have been successfully used in the fast diagnosis of COVID-19, which has increased research and commercial interest in exploiting current developments of CNT field-effect transistors. …”
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    Recent trends in carbon nanotube (CNT)-based biosensors for the fast and sensitive detection of human viruses: a critical review
  17. 2957
    “…The results show that the use of the proposed TFETs can effectively save the number of transistors in the three-input logic gate, which indicates that the three-input TFET is a compact and flexible candidate for three-input logic gates.…”
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    Expanding the Set of Three-Input Logic Functions in Inverted T-Shaped TFETs
  18. 2958
    “…In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current. …”
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    Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET
  19. 2959
    por Sze, S. M., 1936-
    Publicado 2007
    Tabla de Contenidos: “…Physics and properties of semiconductors : a review -- p-n Junctions -- Metal-semiconductor contacts -- Metal-insulator-semiconductor capacitors -- Bipolar transistors -- MOSFETs -- JFETs, MESFETs, and MODFETs -- Tunnel devices -- IMPATT diodes -- Transferred-electron and real-space-transfer devices -- Thyristors and power devices -- LEDs and lasers -- Photodetectors and solar cells -- Sensors.…”
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    Physics of semiconductor devices /
  20. 2960
    por Soltveit, Hans Kristian
    Publicado 2007
    “…The power consumption is 16 mW/channel where the main contributors are the input transistor and the level shifting stage with 5.3 mW and 6.6 mW, respectively. …”
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    Preamplifier-shaper prototype for the Fast Transition Detector of the Compressed Baryonic Matter (CBM) experiment at FAIR
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