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2961por Oberlack, H G, Dannheim, D, Fischer, A, Hambarzumjan, A, Pospelov, G, Reimann, O, Rudert, A, Schacht, P“…Therefore generic studies of different technologies have been carried out at the transistor level to understand the radiation hardness up to integrated neutron fluxes of ~2*10**16 n/cm**2 and the behaviour during operation at cryogenic temperatures. …”
Publicado 2009
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2962“…The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design. …”
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2963“…Alternative design approaches are pursued using bulk-input transistor stages in forward-bias operation for amplifiers, modulators, and references. - Comprehensive Appendix – with additional fundamental analysis, design and scaling guidelines, circuit implementation tables and dimensions, schematics, source code listings, bill of material, etc. …”
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2964por Marco-Hernández, Ricardo, Baú, Marco, Ferrari, Marco, Ferrari, Vittorio, Pedersen, Flemming, Søby, Lars“…The head amplifier consists of two discrete charge preamplifiers with junction field effect transistor (JFET) inputs, a sum and a difference stage, and two cable drivers. …”
Publicado 2017
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2965por Priya, G. Lakshmi, Saran, Puneet, Padhy, Shikhar Kumar, Agarwal, Prateek, Andrew Roobert, A., Julus, L. Jerart“…The exact amount of power used and the number of transistors required by different approaches to better comprehend the ideal technique are also provided. …”
Publicado 2023
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2966“…Many updated nanomaterials‐based biosensors, namely electrochemical, field‐effect transistor, plasmonic, and colorimetric biosensors, employ nucleic acid and antigen–antibody interactions for SARS‐CoV‐2 detection in a highly efficient, reliable, sensitive, and rapid manner. …”
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2967por Liu, Yansheng, Qin, Zhenle, Zhou, Jin, Jia, Xiaobo, Li, Hongli, Wang, Xiaohong, Chen, Yating, Sun, Zijun, He, Xiong, Li, Hongda, Wang, Guofu, Chang, Haixin“…In this review, the different kinds of nano-biosensors based on surface-enhanced Raman scattering (SERS), surface plasmon resonance (SPR), field-effect transistor (FET), fluorescence methods, and electrochemical methods are summarized, starting with a concise description of their sensing mechanism. …”
Publicado 2023
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2968por Anderson, Christopher R., Natera-Cordero, Noel, Guarochico-Moreira, Victor H., Grigorieva, Irina V., Vera-Marun, Ivan J.“…The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.…”
Publicado 2023
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2969por Hu, Jiawei, Li, Yinglu, Zhang, Xufang, Wang, Yanrong, Zhang, Jing, Yan, Jiang, Li, Junjie, Zhang, Zhaohao, Yin, Huaxiang, Wei, Qianhui, Jiang, Qifeng, Wei, Shuhua, Zhang, Qingzhu“…In this paper, a biosensor based on a silicon nanowire field-effect transistor (SiNW FET) was studied for the quantitative detection of Cys-C. …”
Publicado 2023
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2970“…We evaluate the proposed AutoPINN framework on the gate-all-around transistor device. The results demonstrate that AutoPINN achieves an error of less than 0.05%. …”
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2971“…We further simplify the most ‘user-friendly’ potentiometric sensor for waterborne analytes, the ‘extended-gate field effect transistor’ (EGFET). This is accomplished using a ‘bridge’ design, that links two separate water pools, a ‘control gate’ (CG) pool and a ‘floating gate’ (FG) pool, by a bridge filled with agar-agar hydrogel. …”
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2972“…Combined with the measured switch transistor, it was shown that the proposed phase shifter exhibits an insertion loss of less than 2 dB, a return loss of greater than 12 dB, a maximum phase error of less than 0.6° and a channel amplitude difference of less than 0.1 dB in the range of 10 to 20 GHz.…”
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2973“…The test experiments include interesting combinations of magnetic flux compensation and start pulse width adjustments, which cause gradual deterioration in the waveforms (e.g., system output voltage, system output current, insulated-gate bipolar transistor currents, magnetic fluxes), which mimic the fault scenarios. …”
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2974por Abid, Zeeshan, Ali, Liaqat, Gulzar, Sughra, Wahad, Faiza, Ashraf, Raja Shahid, Nielsen, Christian B“…We focus on their utilization in organic solar cells (OSCs), dye-sensitized solar cells (DSSCs), organic field-effect transistors (OFETs), organic-light emitting diodes (OLEDs) and other organic electronic technologies. …”
Publicado 2023
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2975“…The circuit is built using transistor differential pairs to approximate the nonlinear sigmoidal biological functions, and its performance is validated through simulation and compared against mathematical models using phase diagram analysis. …”
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2976por Adler, Ronald Steven“…The invention of the transistor and digital computer in the late 1940s was integral in its development. …”
Publicado 2023
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2977por Jagannathan, Mohanraj, Dhinasekaran, Durgalakshmi, Rajendran, Ajay Rakkesh, Cho, Sungbo“…Notably, researchers have considered nanocomposite-based devices, such as a field effect transistor (FET) and printed electrodes, for the detection of NOCs. …”
Publicado 2023
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2978“…A similar circuit motif is employed in the electronics industry to compensate for transistor nonlinearities in analog circuits.…”
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2979“…Graphene has significant potential for application in electronics1-5, but cannot be used for effective field-effect transistors operating at room temperature because it is a semimetal with a zero bandgap6,7. …”
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2980por Bill, Johannes, Schuch, Klaus, Brüderle, Daniel, Schemmel, Johannes, Maass, Wolfgang, Meier, Karlheinz“…By applying a cortically inspired self-adjusting network architecture, we show that the activity of generic spiking neural networks emulated on a neuromorphic hardware system can be kept within a biologically realistic firing regime and gain a remarkable robustness against transistor-level variations. As a first approach of this kind in engineering practice, the short-term synaptic depression and facilitation mechanisms implemented within an analog VLSI model of I&F neurons are functionally utilized for the purpose of network level stabilization. …”
Publicado 2010
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