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281por Torricelli, Fabrizio, Colalongo, Luigi, Raiteri, Daniele, Kovács-Vajna, Zsolt Miklós, Cantatore, Eugenio“…Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. …”
Publicado 2016
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282por Berning, David“…An automated instrument is described for generating curves for the reverse-bias, safe-operating area of transistors nondestructively. A new technique for detecting second breakdown that makes automation possible is highlighted. …”
Publicado 1991
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283por Resta, Giovanni V., Sutar, Surajit, Balaji, Yashwanth, Lin, Dennis, Raghavan, Praveen, Radu, Iuliana, Catthoor, Francky, Thean, Aaron, Gaillardon, Pierre-Emmanuel, de Micheli, Giovanni“…Polarity-controlled WSe(2) transistors enable the design of compact logic gates, leading to higher computational densities in 2D-flatronics.…”
Publicado 2016
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284por Giovannitti, Alexander, Nielsen, Christian B., Sbircea, Dan-Tiberiu, Inal, Sahika, Donahue, Mary, Niazi, Muhammad R., Hanifi, David A., Amassian, Aram, Malliaras, George G., Rivnay, Jonathan, McCulloch, Iain“…Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. …”
Publicado 2016
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285“…Here we propose and analyse a scheme for conditional state transfer in a Heisenberg XXZ spin chain which realizes a quantum spin transistor. In our scheme, the absence or presence of a control spin excitation in the central gate part of the spin chain results in either perfect transfer of an arbitrary state of a target spin between the weakly coupled input and output ports, or its complete blockade at the input port. …”
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286por Yoo, Hocheon, Ghittorelli, Matteo, Smits, Edsger C. P., Gelinck, Gerwin H., Lee, Han-Koo, Torricelli, Fabrizio, Kim, Jae-Joon“…Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. …”
Publicado 2016
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287“…Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. …”
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288por Kim, Yun Ji, Kim, So-Young, Noh, Jinwoo, Shim, Chang Hoo, Jung, Ukjin, Lee, Sang Kyung, Chang, Kyoung Eun, Cho, Chunhum, Lee, Byoung Hun“…We demonstrated a ternary graphene field-effect transistor (TGFET), showing three discrete current states in one device. …”
Publicado 2016
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289“…In this paper, we propose a highly sensitive and biocompatible glucose sensor using a semiconductor-based field effect transistor (FET) with a functionalized hydrogel. The principle of the FET device contributes to the easy detection of ionic charges with high sensitivity, and the hydrogel coated on the electrode enables the specific detection of glucose with biocompatibility. …”
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290por Jang, Moongyu“…In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. …”
Publicado 2016
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291“…This review focuses on polymer field-effect transistor (PFET) based gas sensor with polymer as the sensing layer, which interacts with gas analyte and thus induces the change of source-drain current (ΔI(SD)). …”
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292por Yung, M.-H., Casanova, J., Mezzacapo, A., McClean, J., Lamata, L., Aspuru-Guzik, A., Solano, E.“…These results allow us to envision a new paradigm of quantum chemistry that shifts from the current transistor to a near-future trapped-ion-based technology.…”
Publicado 2014
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293“…The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. …”
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294por Macucci, Massimo, Tambellini, Gerry, Ovchinnikov, Dmitry, Kis, Andras, Iannaccone, Giuseppe, Fiori, Gianluca“…We present an experimental investigation of slow transients in the gate and drain currents of MoS(2)-based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude that there are at least two independent trapping mechanisms: trapping of charges in the silicon oxide substrate, occurring with time constants of the order of tens of seconds and involving charge motion orthogonal to the MoS(2) sheet, and trapping at the channel surface, which occurs with much longer time constants, in particular when the device is in a vacuum. …”
Publicado 2017
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295“…The comprehension of the governing mechanism which affects device instability is one of the most important requirements for the formation of reliable oxide-thin film transistors (TFTs). However, a quantitative analysis of the dominant mechanism of device instability, which stems from charge trapping induced by defects at the oxide semiconductor interface as well as in its bulk, has not yet been systematically performed. …”
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296por Macchia, Eleonora, Manoli, Kyriaki, Holzer, Brigitte, Di Franco, Cinzia, Ghittorelli, Matteo, Torricelli, Fabrizio, Alberga, Domenico, Mangiatordi, Giuseppe Felice, Palazzo, Gerardo, Scamarcio, Gaetano, Torsi, Luisa“…Conceptualizing cells’ ability to sense at the physical limit by means of highly-packed recognition elements, a millimetric sized field-effect-transistor is used to detect a single molecule. To this end, the gate is bio-functionalized with a self-assembled-monolayer of 10(12) capturing anti-Immunoglobulin-G and is endowed with a hydrogen-bonding network enabling cooperative interactions. …”
Publicado 2018
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297por Venkatraman, Vishak, Friedlein, Jacob T., Giovannitti, Alexander, Maria, Iuliana P., McCulloch, Iain, McLeod, Robert R., Rivnay, Jonathan“…With a host of new materials being investigated as active layers in organic electrochemical transistors (OECTs), several advantageous characteristics can be utilized to improve transduction and circuit level performance for biosensing applications. …”
Publicado 2018
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298por Jia, Chuancheng, Famili, Marjan, Carlotti, Marco, Liu, Yuan, Wang, Peiqi, Grace, Iain M., Feng, Ziying, Wang, Yiliu, Zhao, Zipeng, Ding, Mengning, Xu, Xiang, Wang, Chen, Lee, Sung-Joon, Huang, Yu, Chiechi, Ryan C., Lambert, Colin J., Duan, Xiangfeng“…Molecular transistors operating in the quantum tunneling regime represent potential electronic building blocks for future integrated circuits. …”
Publicado 2018
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299por Hueting, Raymond J. E.“…This work elaborates on two device architectures based on this approach: the negative-capacitance and the piezoelectric field-effect transistor, i.e., the NC-FET (negative-capacitance field-effect transistor), respectively [Formula: see text]-FET. …”
Publicado 2018
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300por Yu, Weili, Li, Feng, Yu, Liyang, Niazi, Muhammad R., Zou, Yuting, Corzo, Daniel, Basu, Aniruddha, Ma, Chun, Dey, Sukumar, Tietze, Max L., Buttner, Ulrich, Wang, Xianbin, Wang, Zhihong, Hedhili, Mohamed N., Guo, Chunlei, Wu, Tom, Amassian, Aram“…Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. …”
Publicado 2018
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