“…In the top-gated graphene transistor measurement, N-doped graphene exhibits n-type behavior, and the obtained carrier mobilities are greater than 1100 cm(2)·V(−1)·s(−1). …”
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“…Image sticking in thin film transistor-liquid crystal displays (TFT-LCD) is related to the dielectric property of liquid crystal (LC) material. …”
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“…Field-effect transistor (FET)-based biosensors have a wide range of applications, and a bio-FET odorant sensor, based on insect (Sf21) cells expressing insect odorant receptors (ORs) with sensitivity and selectivity, has emerged. …”
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“…Here, a label-free biosensor was developed for the Ag(I) detection, which used single-walled carbon nanotubes/field effect transistor (SWNTs/FET) to functionalize with a specific DNAzyme, containing an Agzyme and a complementary strand DNA (CS-DNA) embedded an RNA-base. …”
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“…Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. …”
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“…The resulting polymer has a well-controlled structure and exhibits good charge transfer characteristics in an organic field-effect transistor (OFET), compared to the polymer produced by Migita–Kosugi–Stille cross-coupling polymerization. …”
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“…In this study, a liquid-gated graphene field-effect transistor (GFET) array biosensor (6 × 6 GFETs on the chip) was fabricated and applied for Hg(2+) quantitate detection based on single-stranded DNA (ssDNA) aptamer. …”
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“…Integrated with an AC coupling CDS stage, the amplification is obtained by exploiting the strong capacitance to the voltage relation of a single NMOS transistor. A comprehensive noise model is developed for optimizing the trade-off between the area and noise. …”
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“…We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. …”
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“…Electrically pumped organic lasing requires the integration of electrodes contact into the laser cavity in an organic light‐emitting diode (OLED) or organic field effect transistor configuration to enable charge injection. …”
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“…By injecting the generated current into a transistor with a different threshold voltage, a delta threshold voltage with a greatly reduced negative TC is realized and temperature-compensated by a generated positive TC item at the same time. …”
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“…Using a field-effect transistor (FET)-type biosensor based on carbon nanofibers, in the present study we demonstrate that Haa1 and War1 directly bind to various weak acid anions with different affinities. …”
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“…Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar memory arrays. …”
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“…A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. …”
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“…To ensure the water consumed by the population has these pollutants below the safe threshold, this report demonstrates a field effect transistor (FET) based sensor design incorporating a highly target specific ion-selective membrane combined with extended gate technology which manifests sensitivity exceeding the Nernst limit aided by the high field effect in the short gap region of extended gate technology. …”
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“…Here, we show that we can incorporate these fragile superstructures into a transistor device with electrolyte gating, control the electron density, and measure the electron transport characteristics at room temperature. …”
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“…The evaluated high electron mobilities of 12 cm(2) V(–1) s(–1) for N,N′-bis(cyclohexyl)naphthalene-1,4,5,8-bis(dicarboximide) (DCy-NDI) and 15 cm(2) V(–1) s(–1) for N,N′-dioctylperylene-1,4,5,8-bis(dicarboximide) (DC(8)-PDI) are the benchmarks for organic semiconducting materials that are comparable with the highest ones reported from the field-effect transistor devices. The present TRMC@Interfaces was found to serve as a rapid screening technique to examine the intrinsic performance of organic semiconducting materials as well as a useful tool enabling the precise discussion on the relationship among their local-scale charge carrier mobility, thin-film morphology, and packing structure.…”
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“…The bottom-gated field-effect transistors fabricated using the as-grown single crystals show n-type transistor behavior with a good on/off ratio of 10(6) under ambient conditions. …”
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“…[Image: see text] Self-assembled molecular monolayer (SAMM) doping on semiconductors has been widely appraised for its advantages of doping nanoelectronic devices for applications in the complementary metal-oxide-semiconductor transistor (CMOS) industry. However, defects introduced by SAMM-doping will limit the performance of the devices. …”
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“…A simple driven bipolar junction transistor (BJT) based two-component circuit is presented, to be used as didactic tool by Lecturers, seeking to introduce some elements of complex dynamics to undergraduate and graduate students, using familiar electronic components to avoid the traditional black-box consideration of active elements. …”
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