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Circuitos de transistores
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3081por Ma, Yue, Bi, Jinshun, Wang, Hanbin, Fan, Linjie, Zhao, Biyao, Shen, Lizhi, Liu, Mengxin“…In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. …”
Publicado 2022
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3082“…In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transistor (BJT), relatively lower power consumption was obtained in the design while offering comparable precision to that offered by its BJT counterpart. …”
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3083“…Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors. …”
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3084por Evans, Walter Haskell, 1919-2010Tabla de Contenidos: “…A transistorized radio receiver -- Diodes -- Diode applications -- Triodes and other amplifying components -- An oscilloscope -- Low frequency amplifiers -- High-frequency amplifiers -- Negative feedback and linear oscillators -- A television receiver -- Modulation and detection -- Miscellaneous electronic components -- Two vacuum tube voltmeters -- Digital computer and other switching circuits -- Radar, microwaves and antennas.…”
Publicado 1962
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3085Publicado 2008Tabla de Contenidos: “…Introduction: Indigeneity and indigenous media on the global stage / Pamela Wilson and Michelle Stewart -- Imperfect media and the poetics of indigenous video in Latin America / Juan Francisco Salazar and Amalia Córdova -- "Lest others speak for us": the neglected roots and uncertain future of Maori cinema in New Zealand / Jennifer Gauthier -- Cache: provisions and productions in contemporary Igloolik video / Cache Collective -- Indigenous animation: educational programming, narrative interventions, and children's cultures / Joanna Hearne -- Media as our mirror: indigenous media of Burma (Myanmar) / Lisa Brooten -- Transistor resistors: native women's radio in Canada and the social organization of political space from below / Kathleen Buddle -- Weaving a communication quilt in Colombia: civil conflict, indigenous resistance, and community radio in northern Cauca / Mario A. …”
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3086“…In particular, novel Piezo Oxide Semiconductor Field Effect Transistor (POSFET) based approach for high resolution tactile sensing has been discussed in detail. …”
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3087“…This powerboard incorporates an HV multiplexing switch based on a Panasonic GaN transistor. Control and monitoring of these modules is implemented via the so-called Autonomous Monitor and Control (AMACv1a) ASIC fabricated in 130nm CMOS technology. …”
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3088por Llopart, X, Alozy, J, Ballabriga, R, Campbell, M, Egidos, N, Fernandez, J M, Heijne, E, Kremastiotis, I, Santin, E, Tlustos, L, Sriskaran, V, Poikela, T“…The analog power can be reduced by more than an order of magnitude with little impact on noise by reducing the bias current of the input transistor and increasing the return to zero time of the preamplifier. …”
Publicado 2019
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3089“…In this work, we propose a dual doping based nonvolatile reconfigurable field effect transistor with source/drain (S/D) charge storage layers (DDN R-FET). …”
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3090por Ahn, Yejin, Hwang, Sooji, Kye, Hyojin, Kim, Min Seon, Lee, Wi Hyoung, Kim, Bong-Gi“…Upon application to a field-effect transistor sensor for PTQ-T and resistive sensor for PTQ-TEG, PTQ-TEG exhibited a better NO(2) detection capability with faster signal recovery characteristics than PTQ-T. …”
Publicado 2023
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3091“…Moreover, we can implement active elements like a transistor (gate controlled by magnetic fields) or magnetically reconfigurable functional elements like binary logic gates for processing mechanical signals. …”
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3092“…This work reports the design, modelling, and simulation of a novel polymer MEMS gas sensor platform called a ring–flexure–membrane (RFM) suspended gate field effect transistor (SGFET). The sensor consists of a suspended polymer (SU-8) MEMS based RFM structure holding the gate of the SGFET with the gas sensing layer on top of the outer ring. …”
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3093por von Windheim, Tasso, Gilchrist, Kristin H., Parker, Charles B., Hall, Stephen, Carlson, James B., Stokes, David, Baldasaro, Nicholas G., Hess, Charles T., Scheick, Leif, Rax, Bernard, Stoner, Brian, Glass, Jeffrey T., Amsden, Jason J.“…Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10(−9) S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. …”
Publicado 2023
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3094por Petrozza, Angelo, Summerer, Stephan, Melfi, Donato, Mango, Teresa, Vurro, Filippo, Bettelli, Manuele, Janni, Michela, Cellini, Francesco, Carriero, Filomena“…Furthermore, under said conditions, the mutant plants grow much better and are more tolerant to drought stress, as revealed by digital-based image analysis and in vivo monitoring of the OECT (Organic Electrochemical Transistor) sensor. Altogether, our data indicate that the novel TILLING SlLCY-E allelic variant is a valuable genetic resource that can be used for developing new tomato varieties, improved in drought stress tolerance and enriched in fruit lycopene and carotenoid content.…”
Publicado 2023
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3095“…Compared to three-terminal reconfigurable transistors, which have both the program gate and control gate, the proposed CDS-RSD does not have a control gate but only a program gate for reconfiguration operation. …”
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3096“…[Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. …”
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3097“…In order to achieve a high-precision BGR circuit, the equation of the nonlinear current has been modified and the high-order term of the current flowing into the nonlinear compensation bipolar junction transistor (NLCBJT) is compensated further. According to the modified equation, two solutions are designed to improve the output accuracy of BGR circuits. …”
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3098por Campi, Davide, Mounet, Nicolas, Gibertini, Marco, Pizzi, Giovanni, Marzari, Nicola“…We optimize the structural properties of all these monolayers and explore their electronic structure with a particular emphasis on those rare large-bandgap 2D materials that could be precious in isolating 2D field-effect-transistor channels. Finally, for each material containing up to 6 atoms per unit cell, we identify the best candidates to form commensurate heterostructures, balancing requirements on supercell size and minimal strain.…”
Publicado 2023
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3099“…The collector current value at a particular bias of the silicon–germanium (SiGe) heterojunction bipolar transistor, generated by technology computer-aided design (TCAD), is used as the target dataset with six process parameters as the inputs. …”
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3100por Lei, Jianming, Liu, Yangyi, Yang, Zhanmin, Chen, Yalin, Chen, Dunjun, Xu, Liang, Yu, Jing“…In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build this new model, the dynamic on-resistance (R(dson)) is first accurately extracted via our extraction circuit based on a double-diode isolation (DDI) method using a high operating frequency of up to 1 MHz and a large drain voltage of up to 600 V; thus, the unique problem of an increase in the dynamic R(dson) is presented. …”
Publicado 2023
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