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  1. 3101
    por Wu, Liao, Wang, Xinhui, Xie, Minghua
    Publicado 2023
    “…The proposed circuit included a MOS transistor in the second loop to address this challenge. …”
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    A Self-Powered DSSH Circuit with MOSFET Threshold Voltage Management for Piezoelectric Energy Harvesting
  2. 3102
    “…The AOS efficiently integrates an array of sensing units (merged field effect transistor (FET)‐type gas sensors and amplifier circuits) and an AND‐type nonvolatile memory (NVM) array. …”
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    Energy Efficient Artificial Olfactory System with Integrated Sensing and Computing Capabilities for Food Spoilage Detection
  3. 3103
    “…Defect inspection plays a critical role in thin film transistor liquid crystal display (TFT-LCD) manufacture, and has received much attention in the field of automatic optical inspection (AOI). …”
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    In-TFT-Array-Process Micro Defect Inspection Using Nonlinear Principal Component Analysis
  4. 3104
    por Liu, Yi-Hung, Chen, Yan-Jen
    Publicado 2011
    “…Defect detection has been considered an efficient way to increase the yield rate of panels in thin film transistor liquid crystal display (TFT-LCD) manufacturing. …”
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    Automatic Defect Detection for TFT-LCD Array Process Using Quasiconformal Kernel Support Vector Data Description
  5. 3105
    “…To this end, we simulate the integrated response of an ensemble of single-electron transistors (SET) whose individual threshold potentials show a high variability. …”
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    Biologically Inspired Information Processing and Synchronization in Ensembles of Non-Identical Threshold-Potential Nanostructures
  6. 3106
    “…Design of a preliminary transistor-level integrator circuit in a 0.13 μm complementary metal-oxide-silicon (CMOS) integrated circuit process showed the ability to use online self-calibration to reduce fabrication errors to a sufficiently low level. …”
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    Low-Power Analog Processing for Sensing Applications: Low-Frequency Harmonic Signal Classification
  7. 3107
    “…Due to the two-dimensional confinement of electrons, single- and few-layer MoSe(2) nanostructures exhibit unusual optical and electrical properties and have found wide applications in catalytic hydrogen evolution reaction, field effect transistor, electrochemical intercalation, and so on. …”
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    Few-Layer MoSe(2) Possessing High Catalytic Activity towards Iodide/Tri-iodide Redox Shuttles
  8. 3108
    por Chen, Cheng-Yao
    Publicado 2014
    “…Furthermore, ϕ29 enzyme has also been utilized in emerging DNA sequencing technologies including nanopore-, and protein-transistor-based sequencing. DNA polymerase is, and will continue to be, a crucial component of sequencing technologies.…”
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    DNA polymerases drive DNA sequencing-by-synthesis technologies: both past and present
  9. 3109
    “…A mathematical model is proposed with a clear purpose to acquire an analytical understanding of the field-effect-transistor (FET) based gas detection mechanism. The conductance change in the CNT/graphene channel resulting from the chemical reaction between the gas and channel surface molecules is emphasized. …”
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    An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH(3) gas sensor applications
  10. 3110
    “…Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with temperature. …”
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    Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot
  11. 3111
    “…A thin-film transistor (TFT) having an organic–inorganic hybrid thin film combines the advantage of TFT sensors and the enhanced sensing performance of hybrid materials. …”
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    The Enhanced Formaldehyde-Sensing Properties of P3HT-ZnO Hybrid Thin Film OTFT Sensor and Further Insight into Its Stability
  12. 3112
    “…Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. …”
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    Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display
  13. 3113
    “…A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. …”
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    Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography
  14. 3114
    “…Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). …”
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    Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors
  15. 3115
    por Gao, Anran, Lu, Na, Wang, Yuelin, Li, Tie
    Publicado 2016
    “…Here, we present a novel biosensor based on a complementary metal oxide semiconductor (CMOS)-compatible silicon nanowire tunneling field-effect transistor (SiNW-TFET). They were fabricated “top-down” with a low-cost anisotropic self-stop etching technique. …”
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    Robust ultrasensitive tunneling-FET biosensor for point-of-care diagnostics
  16. 3116
    “…Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO(2)) substrates prior to CVD graphene transfer are measured. …”
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    Correlation of p-doping in CVD Graphene with Substrate Surface Charges
  17. 3117
    “…Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(−1) sec(−1), and threshold voltages of nearly 0 V with low operating voltages. …”
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    Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications
  18. 3118
    “…In this study, we use a micro-grid as a shadow mask to fabricate a graphene based field-effect-transistor (FET). Electrical measurements of the graphene based FET samples are carried out in air and vacuum. …”
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    Characterization of Graphene-based FET Fabricated using a Shadow Mask
  19. 3119
    por Kumar, Neeraj, Kitoh, Ai, Inoue, Isao H.
    Publicado 2016
    “…Electrostatic carrier accumulation on an insulating (100) surface of SrTiO(3) by fabricating a field effect transistor with Parylene-C (6 nm)/HfO(2) (20 nm) bilayer gate insulator has revealed a mystifying phenomenon: sheet carrier density [Image: see text] is about 10 times as large as [Image: see text] ([Image: see text] is the sheet capacitance of the gate insulator, V(G) is the gate voltage, and e is the elementary charge). …”
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    Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO(3) surface
  20. 3120
    “…The circuit simulation results offered biologically plausible spiking activity (<100 Hz) with a capacitor of merely 6 fF, which is hosted in an FG metal-oxide-semiconductor field-effect transistor. The FG-LIF neuron also has the advantage of low operation power (<30 pW/spike). …”
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    Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator
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