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  1. 3121
    “…In this work, biotin-binding proteins have been integrated in two different organic thin-film transistor (TFT) configurations to separately address the changes occurring in the protein-ligand complex morphology and dipole moment. …”
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    Organic bioelectronics probing conformational changes in surface confined proteins
  2. 3122
    “…Here we demonstrate femtoscale displacement transduction using an AlGaN/GaN heterojunction field effect transistor-integrated GaN microcantilever that utilizes piezoelectric polarization-induced changes in two-dimensional electron gas to transduce displacement with very high sensitivity. …”
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    Piezotransistive transduction of femtoscale displacement for photoacoustic spectroscopy
  3. 3123
    “…We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. …”
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    Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon
  4. 3124
    “…Notably, the monolayer 2DP functions as an active semiconducting layer in a thin film transistor, while the multilayer 2DP from cobalt-porphyrin monomer efficiently catalyses hydrogen generation from water. …”
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    Wafer-sized multifunctional polyimine-based two-dimensional conjugated polymers with high mechanical stiffness
  5. 3125
    “…We have accomplished this by integrating a graphene field effect transistor with a scanning tunnelling microscope, thus allowing gate-controlled charging and spectroscopic interrogation of individual tetrafluoro-tetracyanoquinodimethane molecules. …”
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    Tuning charge and correlation effects for a single molecule on a graphene device
  6. 3126
    “…By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. …”
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    In-plane topological p-n junction in the three-dimensional topological insulator Bi(2−x)Sb(x)Te(3−y)Se(y)
  7. 3127
    “…The sub-wavelength aperture is originally coupled to asymmetric electrodes, which activate the thermo-electric THz detection mechanism in a transistor channel made of flakes of black-phosphorus or InAs nanowires. …”
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    Near-field terahertz probes with room-temperature nanodetectors for subwavelength resolution imaging
  8. 3128
    “…This is done by considering the loading, isolating and unloading of one electron at the time, on a phosphorous atom embedded in a silicon double gate transistor. The most important feature of the atom pump is its very isolated ground state, which is populated through the fast loading of much higher lying excited states and a subsequent fast relaxation process. …”
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    Dynamics of a single-atom electron pump
  9. 3129
    “…Our approach is applicable to patterning graphene field-effect transistor arrays, and it can be a promising solution toward resist-free, substrate non-damaging, and cost effective microscale patterning of graphene film.…”
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    Patterning Graphene Film by Magnetic-assisted UV Ozonation
  10. 3130
    por Chen, Yung-Yu
    Publicado 2014
    “…The channel fluorine implantation (CFI) process was integrated with the Si(3)N(4) contact etch stop layer (SiN CESL) uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with the hafnium oxide/silicon oxynitride (HfO(2)/SiON) gate stack. …”
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    Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO(2)/SiON Gate Stack
  11. 3131
    “…Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs’ applications. …”
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    Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors
  12. 3132
    “…Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bonding semiconductor power chips, such as the power insulated gated bipolar transistor (IGBT). However, for the traditional method of bonding IGBT chips, an external pressure of a few MPa is reported necessary for the sintering time of ~1 h. …”
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    Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips
  13. 3133
    “…Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. …”
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    Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity
  14. 3134
    “…We demonstrate simultaneous measurements of DC transport properties and flux noise of a hybrid superconducting magnetometer based on the proximity effect (superconducting quantum interference proximity transistor, SQUIPT). The noise is probed by a cryogenic amplifier operating in the frequency range of a few MHz. …”
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    Noise of a superconducting magnetic flux sensor based on a proximity Josephson junction
  15. 3135
    por Chae, Sang Hoon, Lee, Young Hee
    Publicado 2014
    “…We discuss the strategies for soft electronics with nano-carbon materials and their preparation methods (growth and transfer techniques) to devices as well as the electrical characteristics of transparent conducting films (transparency and sheet resistance) and device performances in field effect transistor (FET) (structure, carrier type, on/off ratio, and mobility). …”
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    Carbon nanotubes and graphene towards soft electronics
  16. 3136
    “…When in vivo proton dosimetry is performed with a metal‐oxide semiconductor field‐effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. …”
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    In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity
  17. 3137
    “…Alternatively, a field-effect transistor geometry with an electrostatically doped, ultra-thin sample can be used. …”
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    Comprehensive phase diagram of two-dimensional space charge doped Bi(2)Sr(2)CaCu(2)O(8+x)
  18. 3138
    “…The design of electrochemically gated graphene field-effect transistors for detecting charged species in real time, greatly depends on our ability to understand and maintain a low level of electrochemical current. …”
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    Quantum and electrochemical interplays in hydrogenated graphene
  19. 3139
    “…Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. …”
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    Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors
  20. 3140
    “…We introduce the integration of an electrochemical transistor and a tailor-made synthetic and biomimetic polymeric membrane, which acts as a molecular memory layer facilitating the stable and selective molecular recognition of the human stress hormone cortisol. …”
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    Molecularly selective nanoporous membrane-based wearable organic electrochemical device for noninvasive cortisol sensing
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