“…Electrical conductivity (σ) and Seebeck coefficients (S) were measured in a vacuum for supported graphene on SiO(2)/Si FET (Field Effect Transistor) substrates so that the charge carrier density could be changed by applying a gate voltage ([Formula: see text]). …”
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“…A commercial off-the-shelf chip and a representative 3-dimensional (3D) metal-oxide-semiconductor field-effect transistor (MOSFET), known as FinFET, were utilized to verify the curing behaviors of the microwave-induced heat treatment. …”
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“…Therefore, transient process of each metallic oxide semiconductor field effect transistor (MOSFET) and its related fast recovery diode, transient process of Schottky rectifier diodes, piecewise equivalent circuit, appropriate selection of variables, and simplified modified dynamic equations are all considered. …”
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“…In an oppositely biased, dual-gate transistor based on a solution-processed organic heterojunction layer, we find that the presence of both n- and p-type channels enables both photogenerated electrons and holes to efficiently separate and transport in the same semiconducting layer. …”
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“…High-voltage n-channel lateral-diffused metal-oxide-semiconductor field-effect transistor (nLDMOS) components, fabricated by a TSMC 0.25-μm 60-V bipolar-CMOS-DMOS (BCD) process with drain-side embedded silicon-controlled rectifier (SCR) of the n-p-n-arranged and p-n-p-arranged types, were investigated, in order to determine the devices’ electrostatic discharge (ESD)-sensing behavior and capability by discrete anode engineering. …”
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“…The ASIC interface was designed and fabricated based on the P-JFET (Positive-Junction Field Effect Transistor) high-voltage bipolar process. The accelerometer was tested through a static field rollover test, and the test results show that the hybrid-integrated vacuum microelectronic accelerometer has good performance, with a sensitivity of 3.081 V/g, the non-linearity is 0.84% in the measuring range of −1 g~1 g, the average noise spectrum density value is 36.7 μV/ [Formula: see text] in the frequency range of 0–200 Hz, the resolution of the vacuum microelectronic accelerometer can reach 1.1 × 10(−5) g, and the zero stability reaches 0.18 mg in 24 h.…”
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“…Here, we report an organic optoelectronic sensorimotor synapse that uses an organic optoelectronic synapse and a neuromuscular system based on a stretchable organic nanowire synaptic transistor (s-ONWST). The voltage pulses of a self-powered photodetector triggered by optical signals drive the s-ONWST, and resultant informative synaptic outputs are used not only for optical wireless communication of human-machine interfaces but also for light-interactive actuation of an artificial muscle actuator in the same way that a biological muscle fiber contracts. …”
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“…The hole mobilities, determined by field-effect transistor characterization, were 2.5 × 10(−3) and 1.1 × 10(−3) cm(2) V(−1) S(−1) for PTPACF and PTPA2CF, respectively. …”
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“…In this study, for the first time, a silicon nanowire field-effect transistor (FET) device based immunosensor was developed to detect GABA molecule. …”
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“…Here, we make use of a three-terminal hot-electron molecular transistor, which lets us access unconventional transport regimes. …”
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“…Toward this goal, we demonstrate the label-free, potentiometric detection of PSA with silicon nanowire ion-sensitive field-effect transistor (Si NW-ISFET) arrays. To realize the field-effect detection, we utilized the DNA aptamer-receptors specific for PSA, which were covalently and site-specifically immobilized on Si NW-ISFETs. …”
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“…For a proof-of-concept demonstration, we fabricated a PbS QD ink-based field-effect transistor on a Cl-passivated substrate, and the device showed a mobility as high as 4.36 × 10(–3) cm(2)/V s, which indicates effective trap-site suppression. …”
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“…We demonstrate the deposition of aligned single crystals of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) by gas blow coating and their use as active layers in organic field-effect transistor (OFET) devices. The OFETs of TIPS-pentacene and C8-BTBT have charge mobilities of 0.15 and 1.4 cm(2) V(–1) s(–1), respectively, with low threshold voltages and on/off ratios exceeding 10(5). …”
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“…The SNNs could utilize Spike-Timing-Dependent Plasticity (STDP) as the unsupervised learning rule, and this plasticity has been observed on our one-transistor-one-resistor (1T1R) RRAM devices under voltage pulses with designed waveforms. …”
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“…In a previous work, the change in interfacial pH detected on the basis of allergic responses was monitored at a mast cell/gate insulator nanogap interface using a cell-cultured gate ion-sensitive field-effect transistor (ISFET), but the interfacial pH behavior at a mast cell/gate insulator nanogap has not been clarified using other methods. …”
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“…Thus, low contact resistivity and higher transistor on-current could be achieved at a high and uniform phosphorus (P)-concentration. …”
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“…Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. …”
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“…The negative-capacitance field-effect transistor(NC-FET) has attracted tremendous research efforts. …”
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“…Enabled by high channel quality, the diamond transistor behavior was shown to transit from a pentode-like to a triode-like characteristic when channel length decreased. …”
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“…In this work, analytical modeling of the semiconducting zigzag carbon nanotube field-effect transistor (ZCNT-FET) based sensor for the detection of gas molecules is demonstrated. …”
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