“…Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. …”
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“…Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. …”
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“…[Image: see text] Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. …”
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“…A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. …”
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“…Electrical control of this ASV-based mechanism allows for unidirectional routing and active gating behaviors, which can potentially be scaled to functional fluidic processors that can regulate the flow of droplets in a manner similar to the current in transistor arrays.…”
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“…The amorphous Al(2)O(3) devices are highly scalable, which enable multi-gate non-volatile field-effect transistor (NVFET) with nanometer-scale fin pitch. It also possesses the advantages of low process temperature, high frequency (~GHz), wide memory window, and long endurance, suggesting great potential in VLSI systems. …”
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“…The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional “silicon limit” (1D-limit) in the trade-off relationship between specific on-resistance (R(SP)) and breakdown voltage (BV). …”
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“…Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), pn-junction diode (with p-body doping and without doping), and resistors (n(+) or p(+) single crystalline Si and n(+) polycrystalline Si) were designed and characterized for its possible use in 1-THz antenna-coupled bolometers. …”
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“…In this review, the importance of biosensors including electrochemical, surface enhanced Raman scattering, field-effect transistor, and surface plasmon resonance biosensors in the detection of severe acute respiratory syndrome coronavirus 2 has been underscored. …”
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“…In addition, the charge-transfer behavior during adsorption in the applied electric fields is analyzed to expound the possibility of Ni-ZnO monolayer as a field-effect-transistor gas sensor. Our calculations can stimulate the study on adsorption and sensing behaviors of TM-ZnO monolayers for their applications in many fields.…”
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“…Affinity biosensors based on graphene field-effect transistor (GFET) or resistor designs require the utilization of graphene’s exceptional electrical properties. …”
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“…Hardware can be manipulated, including below transistor level, and cryptographic keys are at risk of extraction attacks. …”
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“…Herein, a narrow channel pH sensor based on Al(0.25)Ga(0.75)N/GaN high electron mobility transistor (HEMT) with package integrated Polydimethylsiloxane (PDMS) microchannels is proposed. …”
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“…Besides, work function (WF) analysis shows the potential of the Cu-MoSe(2) monolayer as a promising field-effect transistor sensor as well. It is our hope that our work can stimulate more leading-edge studies of the TM-doped MoSe(2) monolayer for sensing applications in many fields.…”
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“…In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were fabricated by adopting low-temperature annealing (600 °C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimensional integrated circuits (3D-ICs) applications. …”
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“…We discuss the requirements for the instrument, the pixel layout, and the baseline readout design, which uses microwave superconducting quantum interference devices and high-electron mobility transistor amplifiers and the cryogenic cooling requirements and strategy for meeting these requirements. …”
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“…The artificial synapse is composed of an optoelectronic transistor based on graphene/MoS(2) heterostructure and an integrated triboelectric nanogenerator. …”
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“…Owing to the comprehensive performance, all-photolithography is achieved, which fabricates organic inverters and high-density transistor arrays with densities up to 1.1 × 10(5) units cm(−2) and 1 to 4 orders larger than conventional printing processes, opening up a new approach toward manufacturing highly integrated organic circuits and systems.…”
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“…We have also summarized the recent advances in detection methods using S protein-based RT-PCR, ELISA, point‐of‐care lateral flow immunoassay, and graphene-based field-effect transistor (FET) biosensors. Finally, we have also discussed the emerging Spike mutants and the efficacy of the Spike-based vaccines against those strains. …”
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“…[Image: see text] Label-free potentiometric detection of DNA molecules using a field-effect transistor (FET) with a gold gate offers an electrical sensing platform for rapid, straightforward, and inexpensive analyses of nucleic acid samples. …”
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