“…Hence, early detection and appropriate diagnosis of corona virus in patient’s body is very essential to save the lives of affected patients This work evolves a Silicon (Si) based label-free electrical device i.e. the reduced graphene oxide field-effect transistor (rGO FET) for SARS-CoV-2 detection. Firstly rGO FET functionalized with SARS-CoV-2 monoclonal antibodies (mAbs). …”
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“…After the conceptual idea, developing a thinking model to understand the operation of the device requires a good “ballpark” evaluation of transistor sizes, decision making, and assumptions to fulfill the specifications. …”
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“…However, due to the limitation of the SiC wafer growth process and processing capacity, SiC devices, such as SiC MOSFET (Metal-oxide-semiconductor Field-effect Transistor), are facing the problems of high cost and unsatisfied performance. …”
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“…In this review, the latest advance of MOF‐based gas sensors relying on different transduction mechanisms, for example, chemiresistive, capacitive/impedimetric, field‐effect transistor or Kelvin probe‐based, mass‐sensitive, and optical ones are comprehensively summarized. …”
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“…The system consists of an aptameric CNT-based field-effect transistor benefiting from a buried gate geometry with Al(2)O(3) as a high dielectric layer and can reflect the pro-cytokine concentration. …”
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“…This work reports a biosensor based on vertical tunnel field-effect transistor (VTFET) developed for the detection of SARS-CoV-2 from the clinical samples through the analysis of its spike, envelope, and DNA proteins. …”
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“…Furthermore, graphene field effect transistor arrays were fabricated, and the obtained devices exhibited good current–voltage characteristics, with maximum mobility of ~ 1600 cm(2)/Vs, confirming the feasibility of the developed technique.…”
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“…In this work, we realize a graphene-porphyrin-graphene SMJ driven by electric field and proton transfer in two configurations. In the transistor configuration with ionic liquid gating, an unprecedented field-effect performance is achieved with a maximum on/off ratio of ~4800 and a gate efficiency as high as ~179 mV/decade in consistence with the theoretical prediction. …”
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“…Here, we demonstrate integrated ferroelectric thin-film transistor (FeTFT) synaptic arrays that can provide efficient parallel programming and data processing for CNNs by the selective and accurate control of polarization in the ferroelectric layer. …”
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“…Notably, the doubly fluorinated or chlorinated QIs formed compact molecular packing in the single-crystal structures through an infinite intermolecular network relative to unsubstituted QI (QI-2H). The field-effect transistor-based QI molecules exhibited typical n-channel transport properties. …”
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“…In this work, we examined the double metal below ferroelectric layer FET that is double metal below negative capacitance field-effect transistor (DM-below-NCFET) for biosensing application and change in nanocavity gap with biomolecules as protein, [Formula: see text] (cholesterol oxidase), streptavidin, and uricase. …”
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“…Therefore, the developed ML technique can be applied to optimize cell transistor processes by determining the material properties of the CTN in 3D NAND Flash.…”
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“…Graphene field-effect transistor (GFET) biosensors exhibit high sensitivity due to a large surface-to-volume ratio and the high sensitivity of the Fermi level to the presence of charged biomolecules near the surface. …”
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“…In this review, we summarized aptasensors for virus detection in recent years according to the classification of the viral target protein, and illustrated common detection mechanisms in the aptasensors (colorimetry, fluorescence assay, surface plasmon resonance (SPR), surface-enhanced raman spectroscopy (SERS), electrochemical detection, and field-effect transistor (FET)). Furthermore, aptamers against different target proteins of viruses were summarized. …”
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“…Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are attractive for future field-effect transistor and optoelectronic devices. However, growing single-phase γ-InSe film is a challenge due to the polymorphic nature of indium selenide (γ-InSe, α-In(2)Se(3), β-In(2)Se(3), γ-In(2)Se(3), etc.). …”
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“…We use wide-bandwidth data (direct current (DC) to high-frequency activity), recorded using epidural and penetrating graphene micro-transistor arrays in a rodent model of acute seizures. …”
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“…In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail. The mechanism is presented by analyzing the variation in the internal distribution of multiple physical quantities in the device. …”
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“…So far, some reviews have considered some of these solutions and established a sophisticated classification, including 1D1M, 1T1M, 1S1M (D: diode, M: memristor, T: transistor, S: selector), self-selective and self-rectifying memristors. …”
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“…In this paper, we present a method for investigating the dissolved oxygen-sensing properties of SnO(2) thin films in solutions by fabricating a SnO(2)-gate field-effect transistor (FET). A similarly structured hydrogen ion-sensitive silicon nitride (Si(3)N(4))-gate FET was fabricated using the same method. …”
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“…A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. …”
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