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  1. 3201
    “…In this work, we propose and simulate an ultrasensitive, label-free, and charge/dielectric modulated Si:HfO(2) ferroelectric junctionless tunnel field effect transistor (FE-JL-TFET) based biosensor. The proposed sensing device employs a dual inverted-T cavity and uses ferroelectric gate stacking of Si-doped HfO(2), a key enabler of negative capacitance (NC) behavior. …”
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    Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO(2) ferroelectric junctionless TFET biosensors
  2. 3202
    “…An electrolyte‐gated transistor is here demonstrated to detect X. fastidiosa at a limit‐of‐quantification (LOQ) of 2 ± 1 bacteria in 0.1 mL (20 colony‐forming‐unit per mL). …”
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    Fast and Reliable Electronic Assay of a Xylella fastidiosa Single Bacterium in Infected Plants Sap
  3. 3203
    “…Further, p-type doping effects were demonstrated using graphene-field-effect transistor structures whose graphene channels were selectively decorated with AgNPs by the PR process, as validated by the decrease in channel resistance and the shift of the Dirac point voltage. …”
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    Tailorable Electronic and Electric Properties of Graphene with Selective Decoration of Silver Nanoparticles by Laser-Assisted Photoreduction
  4. 3204
    “…In this paper, the temporary failure mechanism of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) in a navigation low-noise amplifier (LNA) under the jamming of ultra-wideband (UWB) electromagnetic pulses (EMP) is investigated. …”
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    Failure Mechanism of pHEMT in Navigation LNA under UWB EMP
  5. 3205
    por Seo, Yeongkyo, Kwon, Kon-Woo
    Publicado 2022
    “…To mitigate these issues, an STT-MRAM bit cell can be designed with two transistors to support multiple ports, as well as the independent optimization of read stability and write ability. …”
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    High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
  6. 3206
    “…By means of de-embedding load-pull contours, modeling based on theoretical analysis, and simulation fitting for parameter identification, the nonlinear output capacitance and a series RLC model circuit approximating the input impedance response of the stabilized transistor were extracted. Under the design principle of fully absorbing the parasitic parameters of the device, explicit formulas and tabulated methods related to the Chebyshev impedance transformer were applied to construct filter-based synthesized matching networks at each stage and finally convert them into an implementable mixed-element form via the single-frequency equivalence technique. …”
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    An Efficient 24–30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks
  7. 3207
    “…GaN high-electron-mobility transistor (HEMT) terahertz (THz) detectors have been widely studied and applied in the past few decades. …”
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    Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms
  8. 3208
    por Clegg, Brian
    Publicado 2017
    “…Quantum devices -- superconductors; transistor, diode; light-emitting diode; laser 4. Spin -- spin; fermions; exclusion principle; Fermi Dirac distribution; Bose-Einstein statistics 5. …”
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    The quantum physics bible: the definitive guide to 200 years of subatomic science
  9. 3209
    por Maiman, Theodore H
    Publicado 2018
    “…Nick Holonyak, Jr., Professor of Electrical and Computer Engineering and Physics, University of Illinois at Champaigne-Urbana, and inventor of the light-emitting diode (LED) and co-inventor of the transistor laser "More than five decades later, we can safely conclude that Theodore Maiman's groundbreaking discovery changed the world. …”
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    The laser inventor: memoirs of Theodore H. Maiman
  10. 3210
    por Rinella, G Aglieri, Andronic, A, Antonelli, M, Baccomi, R, Ballabriga, R, Barbero, M, Barrillon, P, Baudot, J, Becht, P, Benotto, F, Beole, S, Bertolone, G, Besson, A, Bialas, W, Borghello, G, Braach, J, Buckland, M, Bugiel, S, Buschmann, E, Camerini, P, Campbell, M, Carnesecchi, F, Cecconi, L, Charbon, E, Chauhan, A, Colledani, C, Contin, G, Dannheim, D, Dort, K, de Melo, J, Deng, W, De Robertis, G, Di Mauro, A, Martin, A Dorda, Dorokhov, A, Dorosz, P, Eberwein, G, Bitar, Z El, Fang, X, Fenigstein, A, Ferrero, C, Fougeron, D, Gajanana, D, Goffe, M, Gonella, L, Grelli, A, Gromov, V, Habib, A, Haim, A, Hansen, K, Hasenbichler, J, Hillemanns, H, Hong, G H, Hu, C, Isakov, A, Jaaskelainen, K, Junique, A, Kotliarov, A, Kremastiotis, I, Krizek, F, Kluge, A, Kluit, R, Kucharska, G, Kugathasan, T, Kwon, Y, La Rocca, P, Lautner, L, Leitao, P, Lim, B -H, Loddo, F, Mager, M, Marras, D, Martinengo, P, Masciocchi, S, Mathew, S, Menzel, M W, Morel, F, Mulyanto, B, Munker, M, Musa, L, Nakamura, M, Pangaud, P, Perciballi, S, Pham, H, Piro, F, Prino, F, Rachevski, S, Rebane, K, Reckleben, C, Reidt, F, Ricci, R, Russo, R, Sanna, I, Sarritzu, V, Savino, U, Schledewitz, D, Sedgwick, I, Senyukov, S, Snoeys, W, Soltveit, H K, Sonneveld, J, Soudier, J, Stachel, J, Suzuki, M, Svihra, P, Suljic, M, Takahashi, N, Termo, G, Tiltmann, N, Toledano, E, Triffiro, A, Turcato, A, Usai, G, Valin, I, Villani, A, Van Beelen, J B, Vassilev, M D, Vernieri, C, Vitkovskiy, A, Wu, Y, Yelkenci, A, Yuncu, A
    Publicado 2023
    “…A first submission MLR1 includedseveral small test chips with sensor and circuit prototypes and transistor test structures. One ofthe main questions to be addressed was how to optimize the sensor in the presence of significantin-pixel circuitry. …”
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    Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
  11. 3211
    “…Roll-to-roll gravure (R2Rg) has become highly affiliated with printed electronics in the past few years due to its high yield of printed thin-film transistor (TFT) in active matrix devices, and to its low cost. …”
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    Towards Digital Twin Implementation in Roll-To-Roll Gravure Printed Electronics: Overlay Printing Registration Error Prediction Based on Printing Process Parameters
  12. 3212
    “…The application of a versatile, low‐temperature thin‐film transistor (TFT) technology is presently described as the implementation on a flexible substrate of an analog front‐end (AFE) system for the acquisition of bio‐potential signals. …”
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    An Integrated Analog Front‐End System on Flexible Substrate for the Acquisition of Bio‐Potential Signals
  13. 3213
    “…Third, we summarize the applications of perovskite SCTFs in photovoltaics, photodetectors, light-emitting devices, artificial synapse and field-effect transistor. Finally, the development opportunities and challenges in commercializing perovskite SCTFs are discussed. …”
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    Perovskite single-crystal thin films: preparation, surface engineering, and application
  14. 3214
    “…A novel 2-transistor (2T) pixel EUV detector is proposed and demonstrated by advanced CMOS technology. …”
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    CMOS compatible 2T pixel for on-wafer in-situ EUV detection
  15. 3215
    “…Here, the development of an electrolyte-gated organic transistor featuring a selective transition from short-term to long-term plasticity of the biological synapse is presented. …”
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    Physically defined long-term and short-term synapses for the development of reconfigurable analog-type operators capable of performing health care tasks
  16. 3216
    “…This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect transistor. It comprises a dual doping-less tunneling junction that lies above an n(+) drain region. …”
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    Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction
  17. 3217
    “…A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. …”
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    Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
  18. 3218
    “…When introduced in an organic field‐effect transistor (OFET) with magnetic contacts, the two enantiomers, (R)‐DNTT and (S)‐DNTT, show an opposite behavior with respect to the relative direction of the magnetization of the contacts, oriented by an external magnetic field. …”
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    Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs
  19. 3219
    “…Here, we present an artificial NMJ using CuInP(2)S(6) (CIPS) as a gate dielectric integrated with an AlGaN/GaN-based high-electron mobility transistor (HEMT). The ferroelectricity of the CIPS is coupled with the two-dimensional electron gas channel in the HEMT, providing a wide programmable current range of 6 picoampere per millimeter to 5 milliampere per millimeter. …”
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    An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP(2)S(6)/GaN HEMT
  20. 3220
    “…Here, a novel 6T1C synaptic device using only n‐type indium gaIlium zinc oxide thin film transistor (IGZO TFT) with low leakage current and a capacitor is proposed, allowing not only linear and symmetric weight update but also sufficient retention time and parallel on‐chip training operations. …”
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    Device‐Algorithm Co‐Optimization for an On‐Chip Trainable Capacitor‐Based Synaptic Device with IGZO TFT and Retention‐Centric Tiki‐Taka Algorithm
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