“…Two kinds of metal oxide semiconductor field effect transistor (OneDose MOSFET and mobile MOSEFT) dosimeter are used during the treatment delivery to measure the skin dose to specific points and compare it with the target prescribed dose. …”
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“…Monte Carlo simulation results show that the proposed design is much more stable than its previous counterparts in terms of vulnerability to transistor mismatch, which is a significant challenge in analog neuromorphic design. …”
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“…Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we characterized their interaction based on cell behavior when seeded on the tested material. …”
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“…Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. …”
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“…Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. …”
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“…Furthermore, a field-effect transistor device fabricated using the material exhibits an on/off ratio of 10(7), with calculated and experimental bandgaps of approximately 1.70 and 1.96 eV, respectively. …”
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“…We show a gate-controllable vertical transistor exhibiting strong negative differential resistance (NDR) effect with multiple resonant peaks, which stay pronounced for various device dimensions. …”
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“…Based on this method, top-gated MoS(2) transistor with ultrathin Al(2)O(3) dielectric is fabricated. …”
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“…Here we fabricate bP-naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from 6±1 nm to 47±1 nm. …”
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“…The main objective of this study was to investigate the characteristics of metal oxide semiconductor field effect transistor (MOSFET) dosimeter for kilovoltage (kV) X-ray beams in order to perform the in vivo dosimetry during image guidance in radiotherapy. …”
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“…We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS(2) and WS(2)/graphene heterostructures, and batch fabrication of large-area flexible monolayer WS(2) film transistor arrays.…”
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“…Here we fabricate and characterize a hybrid MoS(2)/LiNbO(3) acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS(2) followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS(2) devices on silicon. …”
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“…Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. …”
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“…Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS(2) with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 10(8). …”
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“…These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance.…”
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“…Advancements in thin-film transistor (TFT) technology have extended to electronics that can withstand extreme bending or even folding. …”
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“…Here, we report on successful tuning the electronic band structure of n-type Pr(2−x)Ce(x)CuO(4) (x = 0.15) ultrathin films, via the electric double layer transistor technique. Abnormal transport properties, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been revealed within an electrostatic field in range of −2 V to + 2 V, as well as varying the temperature and magnetic field. …”
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“…Here, we present a study of a graphene field-effect transistor (FET), which is functionalized by long-ligand CdSe/ZnS core/shell cQDs. …”
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“…The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. …”
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“…Here, we show the spin states of single-layer graphene to clarify the correlations using electron spin resonance (ESR) spectroscopy as a function of accumulated charge density using transistor structures. Two different electrically induced ESR signals were observed. …”
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