“…We demonstrate contrast formation due to strain and composition in a Si- based metal-oxide semiconductor field effect transistor (MOSFET) with Ge(x)Si(1−x) stressors as a function of the angles used for imaging. …”
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“…As an example we apply the technique to investigate the strain response of organic thin film transistors containing TIPS-pentacene patterned on polymer foils. …”
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“…The combination of excellent electrical and mechanical properties allowed it to serve as interconnects for field-effect transistor arrays with a device density that is five times higher than typical lithographically patterned wavy interconnects.…”
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“…Interestingly, this elastic behavior is transferable to small networks, where we found the surprising effect that linear two filament connections act as transistor-like, angle dependent momentum filters, whereas triangular networks act as stabilizing elements. …”
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“…The conductance of the antiaromatic complex is further modulated electrochemically, demonstrating its potential as a high-conductance transistor.…”
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“…These highly stretchable and transparent all-carbon transistors could enable sophisticated stretchable optoelectronics.…”
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“…High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p(+)-i-n(+) Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. …”
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“…We highlight applicability by encapsulating live cells and creating nonlinear resistor and creased transistor devices.…”
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“…The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. …”
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“…Here, we propose an architecture for a silicon-based quantum computer processor based on complementary metal-oxide-semiconductor (CMOS) technology. We show how a transistor-based control circuit together with charge-storage electrodes can be used to operate a dense and scalable two-dimensional qubit system. …”
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“…The well-controlled process to achieve organic single crystals composed of minimum molecular units realizes unprecedented low contact resistance and results in high-speed transistor operation of 20 MHz, which is twice as high as the common frequency used in near-field wireless communication. …”
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“…This hollow material is able to form the active layer in field effect transistor devices. We find that the current of these devices has strong response to the guest’s interaction within the hollow spaces in the film. …”
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“…A semiconductor-based field-effect transistor (FET) biosensor enables the direct detection of ionic or molecular charges under biological conditions. …”
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“…To gain insight into the doping mechanism and the role of the external dopant ions, we investigate charge injection in ZnO nanocrystal assemblies for a large series of charge compensating electrolyte ions with spectroelectrochemical and electrochemical transistor measurements. We show that charge injection is limited by the diffusion of cations in the nanocrystal films as their diffusion coefficient are found to be ∼7 orders of magnitude lower than those of electrons. …”
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“…Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. …”
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“…Graphene field-effect transistor (G-FET) biosensors have, indeed, demonstrated a detection limit of subnanomolar or even subpicomolar. …”
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“…In order to realize the neuromorphic vision sensor, the one-transistor-one-memristor (1T1M) structure which formed by one memristor and one MOSFET in serial is used to construct photoreceptor cell and ganglion cell. …”
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“…With respect to the latter, the viability of a thiol-functionalized chemical vapor deposition graphene-based solution-gated field-effect transistor array was assessed.…”
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“…In the present review, the authors reviewed recent advances in TN biosensors with a focus on four detection systems: (1) An electrochemical (EC) TN nanobiosensor, (2) field effect transistor (FET)-based TN nanobiosensor, (3) surface plasmon resonance (SPR)-based TN nanobiosensor and (4) surface enhanced Raman spectroscopy (SERS)-based TN nanobiosensor.…”
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“…In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R(ON, D)) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiN(x) passivation layer between the gate and drain electrodes. …”
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