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3261por Crippa, A., Ezzouch, R., Aprá, A., Amisse, A., Laviéville, R., Hutin, L., Bertrand, B., Vinet, M., Urdampilleta, M., Meunier, T., Sanquer, M., Jehl, X., Maurand, R., De Franceschi, S.“…We use a p-type double-gate transistor made using industry-standard silicon technology. …”
Publicado 2019
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3262“…In this study, the aperture ratio of the AMOLED panel fabricated on the polyethylene terephthalate fabric substrate was enhanced by applying a stacked-pixel structure, in which the OLED was deposited above the organic thin-film transistor (OTFT) pixel circuit layer. The stacked pixels were achieved using the following three key technologies. …”
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3263por Dutta, Sourav, Parihar, Abhinav, Khanna, Abhishek, Gomez, Jorge, Chakraborty, Wriddhi, Jerry, Matthew, Grisafe, Benjamin, Raychowdhury, Arijit, Datta, Suman“…The ultra-compact 1 Transistor-1 Resistor implementation of oscillator and bidirectional capacitive coupling allow small footprint area and low operating power. …”
Publicado 2019
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3264por Lv, Liang, Zhuge, Fuwei, Xie, Fengjun, Xiong, Xujing, Zhang, Qingfu, Zhang, Nan, Huang, Yu, Zhai, Tianyou“…When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W(−1) and detectivity over 10(13) Jones while keeping a fast response speed within 20 μs. …”
Publicado 2019
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3265por Xiao, Wenwu, Liu, Chen, Peng, Yue, Zheng, Shuaizhi, Feng, Qian, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue, Liao, Min, Zhou, Yichun“…The HfO(2)-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. …”
Publicado 2019
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3266“…In order to obtain a large area of MoS(2) with excellent performance, we use a metal-assisted exfoliation method to transfer MoS(2), followed by fabricating a field effect transistor to characterize its excellent electrical properties. …”
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3267por Seoane, Natalia, Nagy, Daniel, Indalecio, Guillermo, Espiñeira, Gabriel, Kalna, Karol, García-Loureiro, Antonio“…To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effect transistor is selected as a benchmark device. The device exhibits an off-current ([Formula: see text]) of [Formula: see text] [Formula: see text] A/ [Formula: see text] m, and an on-current ([Formula: see text]) of 1770 [Formula: see text] A/ [Formula: see text] m, with the [Formula: see text] ratio [Formula: see text] , a value [Formula: see text] larger than that of a [Formula: see text] nm gate length Si FinFET. …”
Publicado 2019
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3268“…It is also worth noting the potential roles of highly-sensitive, organic transistor devices and small molecule semiconductors, such as the photochromic and redox active molecule spiropyran, as polymer pendant groups in future biosensor designs.…”
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3269por Pang, Bo, Tang, Zhonghai, Li, Yongchun, Meng, Huifeng, Xiang, Ying, Li, Yuqing, Huang, Jianhua“…The Gaussian simulations reveal that the B←N embedded polymer BNIDT-DPP is more electron-deficient in contrast to IDT-DPP, supporting the decreased bandgap and energy levels of BNIDT-DPP. Organic thin-film transistor (OTFT) tests indicate a well-defined p-type characteristic for both IDT-DPP and BNIDT-DPP. …”
Publicado 2019
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3270por Ridderbos, Joost, Brauns, Matthias, de Vries, Folkert K., Shen, Jie, Li, Ang, Kölling, Sebastian, Verheijen, Marcel A., Brinkman, Alexander, van der Wiel, Wilfred G., Bakkers, Erik P. A. M., Zwanenburg, Floris A.“…[Image: see text] We show a hard superconducting gap in a Ge–Si nanowire Josephson transistor up to in-plane magnetic fields of 250 mT, an important step toward creating and detecting Majorana zero modes in this system. …”
Publicado 2019
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3271por Rana, Sunil, Mouro, João, Bleiker, Simon J., Reynolds, Jamie D., Chong, Harold M. H., Niklaus, Frank, Pamunuwa, Dinesh“…Emerging applications such as the Internet-of-Things and more-electric aircraft require electronics with integrated data storage that can operate in extreme temperatures with high energy efficiency. As transistor leakage current increases with temperature, nanoelectromechanical relays have emerged as a promising alternative. …”
Publicado 2020
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3272“…We demonstrate electric field sensitivity better than that of a single electron transistor, and DC magnetic field sensitivity comparable to that of NV centers. …”
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3273por Wang, Hui, Ramnani, Pankaj, Pham, Tung, Villarreal, Claudia Chaves, Yu, Xuejun, Liu, Gang, Mulchandani, Ashok“…The characteristics of MP-SWNTs were investigated through various optical and electrochemical methods, including UV spectroscopy, Raman, atomic force microscopy, current-voltage (I-V), and field-effect transistor (FET) measurement. The proposed sensor arrays were employed to monitor the four VOCs (tetradecene, linalool, phenylacetaldehyde, and ethylhexanol) emitted by citrus trees infected with Huanglongbing (HLB), of which the contents changed dramatically at the asymptomatic stage. …”
Publicado 2020
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3274“…Here, inspired by structure and intelligent functions of Merkel cell-neurite complexes, we report a flexible, artificial, intrinsic-synaptic tactile sensory organ that mimics synapse-like connections using an organic synaptic transistor with ferroelectric nanocomposite gate dielectric of barium titanate nanoparticles and poly(vinylidene fluoride-trifluoroethylene). …”
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3275“…Also, analysis of the work function (WF) provides the possibility of selective detection of H(2) and C(2)H(2) using a Pd-ZnO monolayer-based field-effect transistor sensor given the opposite changing trend of the WF after their adsorption. …”
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3276por Ku, Minjae, Kim, Joohee, Won, Jong-Eun, Kang, Wonkyu, Park, Young-Geun, Park, Jihun, Lee, Jae-Hyun, Cheon, Jinwoo, Lee, Hyun Ho, Park, Jang-Ung“…A cortisol sensor formed using a graphene field-effect transistor can measure cortisol concentration with a detection limit of 10 pg/ml, which is low enough to detect the cortisol concentration in human tears. …”
Publicado 2020
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3277“…Moreover, the field-effect transistor (FET) device has been fabricated to determine the electrical properties of SLG, and the estimated mobility has been found as ∼2595 cm(2) V(–1) s(–1) at n = −2 × 10(12) cm(–2). …”
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3278por Wan, Changjin, Cai, Pingqiang, Guo, Xintong, Wang, Ming, Matsuhisa, Naoji, Yang, Le, Lv, Zhisheng, Luo, Yifei, Loh, Xian Jun, Chen, Xiaodong“…Such a bimodal artificial sensory neuron collects optic and pressure information from the photodetector and pressure sensors respectively, transmits the bimodal information through an ionic cable, and integrates them into post-synaptic currents by a synaptic transistor. The sensory neuron can be excited in multiple levels by synchronizing the two sensory cues, which enables the manipulating of skeletal myotubes and a robotic hand. …”
Publicado 2020
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3279“…As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. …”
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3280por Chia, Yu-Hsin, Vyas, Sunil, Tsai, Jui-Chang, Huang, Yi-You, Yeh, J. Andrew, Luo, Yuan“…To obtain asymmetric illumination for DPC images, a dynamic illumination system is designed by modifying the regular Köhler illumination using a thin film transistor panel (TFT-panel). Results: Multidepth DPC images of standard resolution chart and biosamples were used to compare imaging performance with the corresponding bright-field images. …”
Publicado 2020
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