“…The drain current hysteresis of pseudo-metal-oxide-semiconductor field effect transistor (MOSFET) with the memory window 1.2–1.3 V at the gate voltage |V(g)| < ±2.5 V is maintained in the RTA treatment at T = 800–900 °C for these transistors.…”
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“…Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.…”
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“…Upon the contact-electrification effect, the induced triboelectric signals activate the ion-gel-gated MoS(2) postsynaptic transistor, endowing the artificial afferent with the adaptive capacity to carry out spatiotemporal recognition/sensation on external stimuli (e.g., displacements, pressures and touch patterns). …”
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“…The threshold voltage of an Sm-doped MoS(2)-based field effect transistor (FET) moved from −12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS(2). …”
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“…This stress can be greater than 10 kcal/mol per nm(2) and is sufficient to induce molecular disorder in the organic semiconductor layer (with energy below 8 kcal/mol per nm(2)), finally causing instability of the organic transistor. This study not only reveals interface stress in organic devices but also correlates instability of organic devices with the interface stress for the first time, offering an effective solution for improving device stability.…”
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“…In this paper, the conventional drain–source voltage clamp circuit based on a transistor is comprehensively investigated by theoretical analysis, simulations, and experiments. …”
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“…The dielectric layer is one of the core materials of the thin film transistor (TFT), and it affects the ability of charges storage in TFT. …”
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“…This includes loop-mediated isothermal amplification and several laboratory protocols for confirming suspected 2019-nCoV cases, as well as studies with non-commercial laboratory protocols based on real-time reverse transcription-polymerase chain reaction and a field-effect transistor-based bio-sensing device. We discuss a potential discovery that could lead to the mass and targeted SARS-CoV-2 detection needed to manage the COVID-19 pandemic through infection succession and timely therapy.…”
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“…Ultrathin two-dimensional (2D) semiconductors are regarded as a potential channel material for low-power transistors with small subthreshold swing and low leakage current. …”
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“…Herein, we have summarized conventional diagnostic methods such as Chest-CT (Computed Tomography), RT-PCR, Loop Mediated Isothermal Amplification (LAMP), Reverse Transcription-LAMP (RT-LAMP), as well new modern diagnostics such as CRISPR–Cas-based assays, Surface Enhanced Raman Spectroscopy (SERS), Lateral Flow Assays (LFA), Graphene-Field Effect Transistor (GraFET), electrochemical sensors, immunosensors, antisense oligonucleotides (ASOs)-based assays, and microarrays for SARS-CoV-2 detection. …”
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“…This kind of research intensified particularly in the period after CRT TV sets and computer monitors were replaced in the market by the advanced technology of thin film transistor (TFT) and liquid crystal display (LCD) screens. …”
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“…The WSe(2)-based field effect transistors exhibit unipolar p-channel transistor behavior with a carrier mobility of 0.45 cm(2) V(−1) s(−1) and an on-off ratio of ∼10.…”
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“…This paper presents a wideband high efficiency MMIC HPA for Sub-6-GHz applications using a 0.25-μm gate-length D-mode GaN/SiC high electron mobility transistor (HEMT) process. The amplifier consists of two stages with two HEMT cells for the driver stage and eight HEMT cells for the power stage. …”
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“…The insulated gate bipolar transistor (IGBT) is widely utilized in the transportation, power, and energy domains because of its high input impedance and minimal on-voltage drop. …”
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“…In particular, in situ convolutional neural network hardware system is designed and implemented using a multiple 25 × 25 TiO (x) memristor arrays and the memristor device parameters are developed to bring global constant voltage programming scheme for entire cells in crossbar array without any voltage tuning peripheral circuit such as transistor. Moreover, the learning rate modulation during in situ hardware training process is successfully achieved due to superior TiO (x) memristor performance such as threshold uniformity (≈2.7%), device yield (> 99%), repetitive stability (≈3000 spikes), low asymmetry value of ≈1.43, ambient stability (6 months), and nonlinear pulse response. …”
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“…In this work, we report a peptide based carbon nanotube (CNT) thin-film-transistor (TFT) biosensor, which can achieve sensitive sequence-independent DNA detection. …”
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“…The fabrication of the BAW filter is compatible with the GaN high electron mobility transistor (HEMT) process, enabling the implementation of the integration of the BAW device and high-performance monolithic microwave integrated circuit (MMIC). …”
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“…The linear superposition of the separate PSIJ effects by the pre-driver and last stage depends on the amplitude of the variation of the supply voltage that can drive the transistor to their nonlinear working regions.…”
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“…Here, we develop a wearable bioelectronic mask device integrated with ion-gated transistors. Based on the sensitive gating effect of ion gels, our aptamer-functionalized transistors can measure trace-level liquid samples (0.3 μL) and even gaseous media samples at an ultra-low concentration (0.1 fg/mL). …”
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“…A thin film of single-walled carbon nanotube (SWCNT) network field-effect transistor (FET) was fabricated by a simple, fast, and reliable deposition method for electronic applications. …”
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